70TPS12PBF_10

VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors Phase Control SCR, 70 A 2 (A) FEATURES • High surge capability • High voltage input rectification • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level Super TO-247 1 (K) (G) 3 APPLICATIONS • AC switches • High voltage input rectification (soft start) PRODUCT SUMMARY Package Diode variation IT(AV) VDRM VTM IGT TJ Super TO-247 Single SCR 70 A 1200 V, 1600 V 1.4 V 100 A - 40 °C to 125 °C • High current crow-bar • Other phase-control circuits • Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS..PbF High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER IT(AV) IRMS VRRM/VDRM ITSM VT dV/dt dI/dt TJ 100 A, TJ = 25 °C TEST CONDITIONS Sinusoidal waveform Lead current limitation Range VALUES 70 A 75 1200/1600 1400 1.4 500 150 - 40 to 125 V A V V/μs A/μs °C UNITS VOLTAGE RATINGS PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V 1200 1600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1300 15 VS-70TPS16PbF 1700 IRRM/IDRM AT 125 °C mA VS-70TPS12PbF * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors Phase Control SCR, 70 A ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average on-state current Maximum continuous RMS on-state current as AC switch Maximum peak, one-cycle non-repetitive surge current Maximum I2t for fusing Maximum I2t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value of on-state slope resistance High level value of on-state slope resistance Maximum peak on-state voltage Maximum rate of rise of turned-on current Maximum holding current Maximum latching current Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage SYMBOL IT(AV) IT(RMS) ITSM I2t I2t VT(TO)1 VT(TO)2 rt1 rt2 VTM dI/dt IH IL IRRM/IDRM dV/dt 100 A, TJ = 25 °C TJ = 25 °C TJ = 25 °C TJ = 25 °C TJ = 125 °C TJ = 125 °C VR = Rated VRRM/VDRM TJ = 125 °C TEST CONDITIONS TC = 82 °C, 180° conduction half sine wave Lead current limitation 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied Initial TJ = TJ maximum VALUES 70 75 1200 1400 7200 10 200 102 000 0.916 1.21 4.138 3.43 1.4 150 200 400 1.0 15 500 V/μs mA A2s A2s V m V A/μs A UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) IGM - VGM TJ = - 40 °C Maximum required DC gate voltage to trigger VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum required DC gate current to trigger IGT VGD IGD TJ = 25 °C TJ = 125 °C Maximum DC gate voltage not to trigger Maximum DC gate current not to trigger TJ = 120 °C, VDRM = Rated value Anode supply = 6 V resistive load T = 30 μs TEST CONDITIONS VALUES 10 2.5 2.5 10 4.0 1.5 1.1 270 100 80 0.25 6 V mA mA V UNITS W A www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94391 Revision: 07-Dec-10 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Phase Control SCR, 70 A Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction temperature range Maximum storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum Case style Super TO-247 SYMBOL TJ TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 125 - 40 to 150 0.27 40 0.2 6 0.21 6 (5) 12 (10) g oz. kgf · cm (lbf · in) °C/W UNITS °C Mounting torque Marking device 70TPS12 70TPS16 RthJ-hs CONDUCTION PER JUNCTION DEVICE VS-70TPS..PbF SINE HALF WAVE CONDUCTION 180° 0.078 120° 0.092 90° 0.117 60° 0.172 30° 0.302 RECTANGULAR WAVE CONDUCTION 180° 0.053 120° 0.092 90° 0.125 60° 0.180 30° 0.306 UNITS °C/W Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 130 120 110 Conduction Angle RthJC (DC) = 0.27 ˚C/W 130 120 110 Conduction Period RthJC (DC) = 0.27 ˚C/W DC 100 180˚ 100 90 80 70 0 30˚ 60˚ 90˚ 120˚ 180˚ 90 80 30˚ 60˚ 70 60 0 90˚ 120˚ 10 20 30 40 50 60 70 80 Average On-state Current (A) 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors Phase Control SCR, 70 A Maximum Average On-state Power Loss (W) 140 120 100 80 60 40 20 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Peak Half Sine Wave On-state Current (A) 1300 1200 1100 1000 900 800 700 600 500 1 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125˚C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Conduction Angle Tj = 125˚C 0 0 10 20 30 40 50 60 70 Average On-state Current (A) 10 100 Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average On-state Power Loss (W) 150 120 90 60 30 0 0 15 30 45 60 75 Average On-state Current (A) Peak Half Sine Wave On-state Current (A) 1500 1400 180˚ 120˚ 90˚ 60˚ 30˚ RMS Limit Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 1300 Initial Tj = 125˚C No Voltage Reapplied 1200 Rated Vrrm Reapplied 1100 1000 DC 900 800 700 600 500 0.01 0.1 Pulse Train Duration (s) Conduction Period Tj = 125˚C 1 Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current 1000 Instantaneous On-state Current (A) Tj = 125˚C 100 10 Tj = 25˚C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94391 Revision: 07-Dec-10 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Phase Control SCR, 70 A Vishay Semiconductors 100 Instantaneous Gate Voltage (V) 10 Rectangular gate pulse a)Recommended load line for rated di/dt: 20 V, 30 ohms tr = 0.5 µs, tp >= 6 µs b)Recommended load line for = 6 µs (1) PGM = 100 W, tp = 500 µs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = -40 ˚C TJ = 25 ˚C TJ = 125 ˚C 1 VGD IGD (4) (3) (2) (1) 0.1 0.001 70TPS.. Series Frequency Limited by PG(AV) 0.01 0.1 1 10 Instantaneous Gate Current (A) 100 1000 Fig. 8 - Gate Characteristics Transient Thermal Impedance ZthJC (°C/W) 1 Steady State Value (DC Operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 70TPS.. Series 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Document Number: 94391 Revision: 07-Dec-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Vishay Semiconductors ORDERING INFORMATION TABLE Device code Phase Control SCR, 70 A VS1 1 2 3 4 5 6 7 70 2 - T 3 P 4 S 5 16 6 PbF 7 Vishay Semiconductors product Current rating (70 = 70 A) Circuit configuration: T = Thyristor Package: P = Super TO-247 Type of silicon: S = Standard recovery rectifier Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS 12 = 1200 V 16 = 1600 V Dimensions Part marking information www.vishay.com/doc?95073 www.vishay.com/doc?95070 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 94391 Revision: 07-Dec-10 Outline Dimensions Vishay High Power Products Super TO-247 DIMENSIONS in millimeters (inches) 16.10 (0.632) 15.10 (0.595) A 0.13 (0.005) 5.50 (0.216) 4.50 (0.178) 2.15 (0.084) 1.45 (0.058) 2xR 20.80 (0.818) 19.80 (0.780) 4 C 1 2 3 4.25 (0.167) 3.85 (0.152) 14.80 (0.582) 13.80 (0.544) B 5.45 (0.215) 2x 1.20 (0.047) 3x 3x 0.90 (0.035) 0.25 (0.010) M B A M 2.35 (0.092) 1.65 (0.065) 0.25 (0.010) M B A M 13.90 (0.547) 13.30 (0.524) Ø 1.60 (0.063) MAX. 1.30 (0.051) 0.70 (0.028) 16.10 (0.633) 15.50 (0.611) 4 Section E - E Lead assignments E E MOSFET 1 - Gate 2 - Drain 3 - Source 4 - Drain IGBT 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Notes (1) Dimension and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC outline TO-274AA Document Number: 95073 Revision: 10-Dec-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1