72173

Si7501DN Vishay Siliconix Complementary 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) P-Channel Channel −30 FEATURES rDS(on) (W) 0.051 @ VGS = −10 V 0.075 @ VGS = −6 V 0.035 @ VGS = 10 V 0.050 @ VGS = 4.5 V ID (A) −6.4 −5.3 7.7 6.5 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile APPLICATIONS D Backlight Inverter D DC/DC Converter − 4-Cell Battery N-Channel N Channel 30 PowerPAK 1212-8 S1 3.30 mm S1 1 2 G1 3 3.30 mm S2 4 G2 G1 D D 8 7 D 6 D 5 D G2 Bottom View Ordering Information: Si7501DN-T1—E3 S2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) P-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C N-Channel 10 secs Steady State 30 "20 Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "25 Unit V −6.4 −5.1 −25 −2.6 3.1 3 −4.5 −3.6 7.7 4.7 25 5.4 4.3 A −1.3 1.6 1.0 −55 to 150 2.6 3.1 2 1.3 1.6 1.0 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Maximum J Mi Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Case) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 32 65 5 Maximum 40 81 6.3 Unit _C/W 1 Si7501DN Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Threshold Voltage VGS(th) VDS = VGS, ID = −250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "25 V VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 55_C VDS = 30 V, VGS = 0 V, TJ = 55_C On-State On State Drain Currenta ID( ) D(on) VDS w −5 V, VGS = −10 V VDS p 5 V, VGS = 10 V VGS = −10 V, ID = −6.4 A Drain-Source On-State Drain Source On State Resistancea rDS( ) DS(on) VGS = 10 V, ID = 7.7 A VGS = −6 V, ID = −5.3 A VGS = 4.5 V, ID = 6.5 A Forward Transconductancea gf fs VSD VDS = −15 V, ID = −6.4 A VDS = 15 V, ID = 7.7 A IS = −1.7 A, VGS = 0 V IS = 1.7 A, VGS = 0 V P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch −25 25 0.041 0.028 0.055 0.040 13 15 −0.80 0.80 −1.2 1.2 0.051 0.035 0.075 0.050 S W −1.0 1.0 −3 3 "200 "100 −1 1 −5 5 A mA V Symbol Test Condition Min Typ Max Unit Gate-Body Gate Body Leakage IGSS nA Diode Forward Voltagea V Dynamicb Total Gate Charge otal Gate Charge Qg P-Channel P-Channel VDS = −15 V, VGS = −10 V, ID = −6.4 A N-Channel VDS = 15 V, VGS = 10 V ID = 7.7 A 15 V V, 7 P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Channel VDD = −15 V, RL = 5 W ID ^ −3 A, VGEN = −10 V, RG = 1 W N-Channel VDD = 15 V RL = 5 W 15 V, ID ^ 3 A, VGEN = 10 V, RG = 1 W V, P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch IF = −1.7 A, di/dt = 100 A/ms IF = 1.7 A, di/dt = 100 A/ms P-Ch N-Ch 12.5 9 2.5 2 3.6 1.3 9 3 10 10 20 15 25 20 30 10 25 20 15 15 30 25 40 30 45 15 50 40 ns W 19 14 nC nC Gate-Source Gate Source Charge Qgs Qgd d Rg td( ) d(on) tr td( ff) d(off) tf trr Gate-Drain Gate Drain Charge Gate Resistance Turn-On Turn On Delay Time Rise Time Turn-Off Turn Off Delay Time Fall Time Source-Drain Reverse Recovery Time Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 25 VGS = 10 thru 6 V 20 I D − Drain Current (A) 5V I D − Drain Current (A) 20 25 TC = −55_C 25_C P−CHANNEL Transfer Characteristics 15 15 125_C 10 4V 10 5 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 5 0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) 0.16 r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 1000 Capacitance 0.12 C − Capacitance (pF) 800 Ciss 600 0.08 VGS = 6 V VGS = 10 V 0.04 400 Coss Crss 200 0.00 0 5 10 15 20 25 0 0 6 12 18 24 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 6.4 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 6.4 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0.8 0 0 3 6 9 12 15 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 3 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 TJ = 150_C I S − Source Current (A) 10 0.16 P−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) 0.12 ID = 6.4 A 0.08 TJ = 25_C 0.04 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.6 50 Single Pulse Power 0.4 V GS(th) Variance (V) ID = 250 mA Power (W) 0.2 40 30 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc www.vishay.com 4 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 P−CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 65_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 5 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 25 I D − Drain Current (A) 20 4V 15 10 5 3V 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) 0 0 1 2 3 4 5 6 VGS − Gate-to-Source Voltage (V) I D − Drain Current (A) 25 20 15 10 TC = 125_C 5 25_C 30 N−CHANNEL Transfer Characteristics −55_C 0.10 r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 800 Capacitance C − Capacitance (pF) 0.08 600 Ciss 0.06 VGS = 4.5 V 0.04 VGS = 10 V 400 0.02 200 Crss 0 0 5 10 15 20 25 30 0 5 10 Coss 0.00 15 20 25 30 ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 7.7 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.7 A 1.4 6 r DS(on) − On-Resistance (W ) (Normalized) 1.2 4 1.0 2 0.8 0 0 2 4 6 8 10 Qg − Total Gate Charge (nC) 0.6 −50 −25 0 25 50 75 100 125 150 TJ − Junction Temperature (_C) www.vishay.com 6 Document Number: 72173 S-32419—Rev. B, 24-Nov-03 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 30 0.16 N−CHANNEL On-Resistance vs. Gate-to-Source Voltage r DS(on) − On-Resistance ( W ) I S − Source Current (A) TJ = 150_C 10 0.12 0.08 ID = 7.7 A 0.04 TJ = 25_C 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.4 0.2 V GS(th) Variance (V) −0.0 −0.2 −0.4 −0.6 −0.8 −50 10 ID = 250 mA Power (W) 30 50 Single Pulse Power 40 20 −25 0 25 50 75 100 125 150 0 10−3 10−2 10−1 1 10 100 600 TJ − Temperature (_C) Time (sec) 100 Safe Operating Area rDS(on) Limited IDM Limited 10 I D − Drain Current (A) P(t) = 0.0001 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) P(t) = 1 P(t) = 10 dc Document Number: 72173 S-32419—Rev. B, 24-Nov-03 www.vishay.com 7 Si7501DN Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 N−CHANNEL Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Notes: PDM t1 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA =65_C/W t1 t2 Single Pulse 0.01 10−4 10−3 10−2 1 Square Wave Pulse Duration (sec) 10−1 3. TJM − TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10−4 10−3 10−2 Square Wave Pulse Duration (sec) 10−1 1 www.vishay.com 8 Document Number: 72173 S-32419—Rev. B, 24-Nov-03