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7705201FA

7705201FA

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    7705201FA - Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers - Vishay Siliconix

  • 数据手册
  • 价格&库存
7705201FA 数据手册
DG508A_MIL/509A_MIL Vishay Siliconix Single 8-Ch/Differential 4-Ch CMOS Analog Multiplexers (Obsolete for non-hermetic. Use DG408/409 as pin-for-pin replacements.) FEATURES D D D D D D Low On-Resistance: 240 W TTL and CMOS Logic Compatible Low Power: 30 mW Break-Before-Make Switching 44-V Power Supply Rating Transition Time: 600 ns BENEFITS D D D D Easily Interfaced Low Power Consumption Low System Crosstalk Wide Analog Signal Range D D D D D APPLICATIONS Communication Systems ATE Data Acquisition Systems Audio Signal Routing and Multiplexing Medical Instrumentation DESCRIPTION The DG508A_MIL, an 8-channel single-ended analog multiplexer, is designed to connect one of eight inputs to a common output as determined by a 3-bit binary address (A0, A1, A2). enable (EN) are TTL or CMOS compatible over the full specified operating temperature range. The DG509A_MIL, a dual 4-channel analog multiplexer, is designed to connect one of four differential inputs to a common output as determined by its 2-bit binary address (A0, A1) logic. Break-before-make switching action protects against momentary shorting of the input signals. Fabricated in the Vishay Siliconix Plus-40 process, the absolute maximum voltage rating is extended to 44 V, allowing increased operating headroom for standard "15-V signal swings and operation with "20-V supplies. An epitaxial layer prevents latch up. The DG508A_MIL/509A_MIL are available in hermetic packages. For plastic packages, use the DG408/409 as pin-for-pin replacements. A channel in the on state conducts current equally well in both directions. In the off state each channel blocks voltages up to the power supply rails, normally 30 V peak-to-peak. An enable (EN) function allows for device selection when several multiplexers are used All control inputs, address (AX) and For applications requiring address data latching, the DG528/529 is recommended. DG408/409 is recommended for higher precision applications. For wideband/video routing and multiplexing, the DG538A is recommended. FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS Dual-In-Line EN A0 EN V– S1 S2 S3 S4 D 1 2 3 4 5 6 7 8 Decoders/Drivers 16 15 14 13 12 11 10 A1 A2 GND S1 V+ NC S5 S6 S7 S8 S2 S3 7 8 15 14 S5 S6 6 Key 3 V– 4 5 2 1 20 19 18 17 GND V+ NC A0 LCC NC A1 A2 Decoders/Drivers DG508A_MIL 16 DG508A_MIL Top View 9 9 S4 10 D 11 NC 12 S8 13 S7 Top View www.vishay.com S FaxBack 408-970-5600 Document Number: 70067 S-00405—Rev. C, 21-Feb-00 5-1 DG508A_MIL/509A_MIL Vishay Siliconix FUNCTIONAL BLOCK DIAGRAMS AND PIN CONFIGURATIONS ORDERING INFORMATION - DG508A_MIL Temp Range 0 to 70_C –25 to 85_C –40 to 85_C TRUTH TABLE - DG508A_MIL A2 X 0 0 0 0 1 1 1 1 Package 16-Pin Plastic DIP 16-Pin CerDIP 16-Pin Narrow SOIC 16-Pin CerDIP CerDIP LCC-20 Part Number DG508ACJ DG508ABK DG508ADY DG508AAK DG508AAK/883 DG508AAZ/883 7705201EA 7705201EC 7705201FA 7705201FC JM38510/19007BEA JM38510/19007BEC A1 X 0 0 1 1 0 0 1 1 A0 X 0 1 0 1 0 1 0 1 EN 0 1 1 1 1 1 1 1 1 On Switch None 1 2 3 4 5 6 7 8 –55 to 125_C 55 16-Pin Sidebraze Sidebraze 16-Pin Flat Pack Flat Pack 16-Pin Sidebraze Sidebraze Logic “0” = VAL v 0.8 V 0 .8 Logic “1” = VAH w 2.4 V 1 X = Don’t Care Dual-In-Line and SOIC EN A0 EN V– S1a S2a S3a S4a Da 1 2 3 4 5 6 7 8 Decoders/Drivers 16 15 14 13 12 11 10 9 A1 GND V– V+ S1a S1b NC S2b S3b S4b Db S2a S3a 7 8 5 6 Key 3 4 2 A0 LCC NC A1 1 20 GND 19 18 17 16 15 14 V+ S1b NC S2b S3b Decoders/Drivers DG509A_MIL 9 S4a 10 Da 11 NC 12 Db 13 S4b DG509A_MIL Top View Top View ORDERING INFORMATION - DG509A_MIL Temp Range Package 16-Pin CerDIP CerDIP –55 to 125_C 55 LCC-20 16-Pin Sidebraze Sidebraze TRUTH TABLE - DG509A_MIL A1 X 0 0 1 1 Part Number DG509AAK DG509AAK/883 DG509AAZ/883 JM38510/19008BEA JM38510/19008BEC A0 X 0 1 0 1 EN 0 1 1 1 1 Logic “0” = VAL v 0.8 V 0 .8 Logic “1” = VAH w 2.4 V 1 X = Don’t Care On Switch None 1 2 3 4 www.vishay.com S FaxBack 408-970-5600 5-2 Document Number: 70067 S-00405—Rev. C, 21-Feb-00 DG508A_MIL/509A_MIL Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Voltage Referenced to V– V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V or 20 mA, whichever occurs first Current (Any Terminal, Except S or D) . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Continuous Current, S or D . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA Peak Current, S or D (Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . . . . . . . 40 mA Storage Temperature (K Suffix) . . . . . . . . . . . . . . . . . . . –65 to 150_C (J and Y Suffix) . . . . . . . . . . . . . . –65 to 125_C Power Dissipation (Package)b 16-Pin CerDIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW LCC-20c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. Signals on SX, DX or INX exceeding V+ or V– will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads soldered or welded to PC board. c. Derate 12 mW/_C above 75_C. SPECIFICATIONSa Test Conditions Unless Otherwise Specified Parameter P Analog Switch Analog Signal Rangee Drain-Source On-Resistance rDS(on) Match Source Off Leakage Current Drain Off Leakage Current Lk C t VANALOG rDS(on) DrDS(on) IS(off) VD = "10 V, IS = –200 mA –10 V < VS < 10 V VEN = 0 V, VS = "10 V VD = #10 V VEN = 0 V VD = "10 V VS = #10 V DG508A_MIL DG509A_MIL DG508A_MIL ID(on) VS = VD = "10 V DG509A_MIL Full Room Full Room Room Full Room Full Room Full Room Full Room Full –1 –50 –10 –200 –10 –100 –10 –200 –10 –100 –15 240 6 1 50 10 200 10 100 10 200 10 100 nA A 15 400 500 V W % A Suffix –55 to 125_C Symbol S bl V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf Tempb T Mind Typc Maxd U i Unit ID(off) Drain On Leakage Current Lk C t Digital Control Logic Input Current g p Input V lt I t Voltage High Hi h Logic Input Current Input Voltage Low VA = 2.4 V IAH VA = 15 V IAL VEN = 0 V, 2.4 V, VA = 0 V Room Full Room Full Room Full –10 –30 –10 –30 –0.002 0.006 –0.002 10 30 mA Dynamic Characteristics Transition Time Break-Before-Make Time Enable Turn-On Time Enable Turn-Off Time Charge Injection Off Isolation Logic Input Capacitance Source Off Capacitance Drain Off Capacitance Off Capacitance tTRANS tOPEN tON(EN) tOFF(EN) Q OIRR Cin CS(off) CD(off) See Figure 2 See Figure 4 See Figure 3 Figure See Figure 5 VEN = 0 V, RL = 1 kW , CL = 15 pF VS = 7 VRMS, f = 500 kHz f = 1 MHz VEN = 0 V, VS = 0 V, f = 140 kHz VEN = 0 V, VD = 0 V f = 140 kH kHz DG508A_MIL DG509A_MIL Room Room Room Room Room Room Room Room Room Room 0.6 0.2 1 0.4 6 68 8 6 25 12 www.vishay.com S FaxBack 408-970-5600 pF F 1.5 1.0 pC dB 1.0 ms Document Number: 70067 S-00405—Rev. C, 21-Feb-00 5-3 DG508A_MIL/509A_MIL Vishay Siliconix SPECIFICATIONSa Test Conditions Unless Otherwise Specified Parameter P Power Supplies Positive Supply Current Negative Supply Current I+ I– VEN = 0 V or 2.4 V 2.4 Room Room –1.5 1.3 –0.7 2.4 mA A Suffix –55 to 125_C Symbol S bl V+ = 15 V, V– = –15 V VIN = 2.4 V, 0.8 Vf Tempb T Mind Typc Maxd U i Unit Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) rDS(on) vs. VD and Power Supply "5 V r DS(on) Drain-Source On-Resistance ( W ) – 500 2.0 400 "7.5 V 1.5 "10 V "15 V "20 V 100 0.5 V T (V) 300 2.5 Input Switching Threshold vs. V+ and V– Supply Voltages 200 1.0 0 –20 0 –15 –10 –5 0 5 10 15 20 ”5 ”10 ”15 ”20 VD – Drain Voltage (V) V+, V– Positive and Negative Supplies (V) 500 r DS(on) Drain-Source On-Resistance ( W ) – 450 400 350 300 250 200 150 100 50 0 –15 –10 –5 0 5 VD – Drain Voltage (V) 10 15 –55_C 125_C 25_C 16 14 12 10 Q (pC) 8 6 4 2 0 –15 Charge Injection vs. Analog Voltage (VS) V+ = 15 V V– = –15 V rDS(on) vs. VD and Temperature V+ = 15 V V– = –15 V –10 –5 0 5 VS – Source Voltage (V) 10 15 www.vishay.com S FaxBack 408-970-5600 5-4 Document Number: 70067 S-00405—Rev. C, 21-Feb-00 DG508A_MIL/509A_MIL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Supply Current vs. Switching Frequency 6 V+ = 15 V V– = –15 V –20 I+ 2 I+, I– (mA) X TALK (dB) –40 Plastic –60 0 V+ = 15 V V– = –15 V ref. 0 dBm CerDIP Crosstalk vs. Frequency 4 0 –2 I– –4 –80 –100 –6 10 k 100 k f – Frequency (Hz) 1M –120 1k 10 k 100 k f – Frequency (Hz) 1M 10 M Off Isolation vs. Frequency 0 V+ = 15 V V– = –15 V ref. 0 dBm CerDIP –40 ISOL (dB) Plastic –60 t TRANS , t OPEN (ns) 1400 Switching Time vs. Temperature V+ = 15 V V– = –15 V 1200 –20 1000 tTRANS 800 tOPEN –80 600 –100 400 –120 1k 10 k 100 k f – Frequency (Hz) 1M 10 M 200 –55 –35 –15 5 25 45 65 85 105 125 Temperature (_C) Switching Time vs. Positive Supply Voltage 1100 1000 t TRANS , t OPEN (ns) 900 800 I D, I S 700 600 500 400 300 200 10 12 14 16 18 20 22 –55 tOPEN tTRANS 1 nA 100 nA 10 nA Leakages vs. Temperature V+ = 15 V V– = –15 V VD = "14 V ID(on), ID(off) 100 pA IS(off) 10 pA –35 –15 5 25 45 65 85 105 125 V+ – Positive Supply (V) Temperature (_C) www.vishay.com S FaxBack 408-970-5600 Document Number: 70067 S-00405—Rev. C, 21-Feb-00 5-5 DG508A_MIL/509A_MIL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 25 IS(off) vs. Analog Voltage 20 V+ = 15 V V– = –15 V VS = –VD TA = 25_C ID(on), ID(off) vs. Analog Voltage V+ = 15 V V– = –15 V TA = 25_C 0 15 5 I S (pA) I D (pA) 0 –5 –20 IS(off) ID(on) ID(off) –40 –15 –25 –15 –10 –5 0 5 10 15 –60 –15 –10 –5 0 5 10 15 VS – Source Voltage (V) VD – Drain Voltage (V) Charge Injection vs. Power Supply Voltage 12 10 8 Q (pF) 6 4 2 0 5 10 15 20 25 V+, V– Positive and Negative Supplies (V) SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ GND V+ A0 V+ V– AX V+ V– EN – + – + V– V+ V+ – + V– V+ Decode/ Drive V– Sx S1 D V– FIGURE 1. www.vishay.com S FaxBack 408-970-5600 5-6 Document Number: 70067 S-00405—Rev. C, 21-Feb-00 DG508A_MIL/509A_MIL Vishay Siliconix TEST CIRCUITS +15 V V+ A2 A1 A0 EN GND 50 W –15 V VS1 Switch Output +15 V V+ A1 A0 S1 S1a – S4a, Da #10 V VO 300 W –15 V 35 pF "10 V 90% VS8 tTRANS S1 ON S8 ON tTRANS VO 0V 90% V– 300 W 35 pF S1 S2 – S7 S8 D #10 V VO Logic Input 3V 50% 0V tr
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