80CPU02-F3

VS-80CPU02-F3 Vishay Semiconductors Hyperfast Rectifier, 2 x 40 A FRED Pt® Base common cathode 2 FEATURES • Ultrafast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Compliant to RoHS Directive 2002/95/EC TO-247AC 1 3 Anode Anode 2 1 2 Common cathode DESCRIPTIONS/APPLICATIONS VS-80CPU02-F3 series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of welding, SMPS, UPS, DC/DC converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-247AC 2 x 40 A 200 V 1.02 V 34 ns 175 °C Common cathode ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current per leg total device SYMBOL VRRM IF(AV) IFSM TJ, TStg TC = 145 °C TJ = 25 °C TEST CONDITIONS MAX. 200 40 80 330 - 65 to 175 °C A UNITS V Non-repetitive peak surge current per leg Operating junction and storage temperatures ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR IR = 100 μA I F = 40 A Forward voltage VF IF = 40 A, TJ = 150 °C I F = 80 A IF = 80 A, TJ = 150 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 0.94 0.80 1.07 0.97 120 3.5 MAX. 1.02 0.90 1.20 1.08 5 500 μA pF nH V UNITS Document Number: 93457 Revision: 19-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-80CPU02-F3 Vishay Semiconductors Hyperfast Rectifier, 2 x 40 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 40 A dIF/dt = - 200 A/μs VR = 200 V MIN. TYP. 34 33 54 3.4 8 56 216 MAX. A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style TO-247AC SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 0.46 0.3 6.0 0.21 MAX. 175 0.70 40 12 (10) g oz. kgf cm (lbf in) °C/W UNITS °C 80CPU02 www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93457 Revision: 19-Nov-10 VS-80CPU02-F3 Hyperfast Rectifier, 2 x 40 A FRED Pt® IF - Instantaneous Forward Current (A) 1000 1000 Vishay Semiconductors IR - Reverse Current (mA) 100 TJ = 175 °C 10 1 0.1 0.01 0.001 0.0001 TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 75 °C TJ = 50 °C TJ = 25 °C 100 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C 1 0.3 0.6 0.9 1.2 1.5 1.8 93457_02 0 50 100 150 200 93457_01 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 1000 CT - Junction Capacitance (pF) 100 0 93457_03 50 100 150 200 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 0.1 Single pulse (thermal resistance) 0.01 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 93457_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93457 Revision: 19-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-80CPU02-F3 Vishay Semiconductors 180 170 160 150 140 130 120 See note (1) 110 0 93457_05 Hyperfast Rectifier, 2 x 40 A FRED Pt® 80 70 Allowable Case Temperature (°C) DC 60 IF = 40 A, TJ = 125 °C trr (ns) Square wave (D = 0.50) Rated VR applied 50 40 IF = 40 A, TJ = 25 °C 30 20 Average values 10 100 10 20 30 40 50 60 93457_07 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 70 dIF/dt (A/μs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 600 500 400 RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 0 10 20 30 40 50 60 93457_08 Average Power Loss (W) 60 50 40 30 20 10 0 Qrr (nC) IF = 40 A, TJ = 125 °C 300 200 IF = 40 A, TJ = 25 °C 100 0 100 1000 93457_06 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/μs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93457 Revision: 19-Nov-10 VS-80CPU02-F3 Hyperfast Rectifier, 2 x 40 A FRED Pt® VR = 200 V Vishay Semiconductors 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 9 - Reverse Recovery Waveform and Definitions Document Number: 93457 Revision: 19-Nov-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-80CPU02-F3 Vishay Semiconductors ORDERING INFORMATION TABLE Device code Hyperfast Rectifier, 2 x 40 A FRED Pt® VS1 1 2 - 80 2 C 3 P 4 U 5 02 6 -F3 7 Vishay Semiconductors product Current rating (80 = 80 A) 3 4 5 6 - Circuit configuration: C = Common cathode - P = TO-247AC U = Ultrafast rectifier Voltage rating (02 = 200 V) 7 - Environmental digit: -F3 = RoHS compliant and totally lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-80CPU02-F3 QUANTITY PER TUBE 25 MINIMUM ORDER QUANTITY 1000 PACKAGING DESCRIPTION Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions Part marking www.vishay.com/doc?95223 www.vishay.com/doc?95007 www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93457 Revision: 19-Nov-10 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1