80EBU04

80EBU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PTTM FEATURES • Ultrafast recovery • 175 °C operating junction temperature • Screw mounting only • Lead (Pb)-free plating Cathode Anode RoHS COMPLIANT • Designed and qualified for industrial level BENEFITS PowerTabTM • Reduced RFI and EMI • Higher frequency operation • Reduced snubbing • Reduced parts count PRODUCT SUMMARY trr (typical) IF(AV) VR 50 ns 80 A 400 V DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 101 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS MAX. 400 80 800 160 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, Vr VF IR = 100 µA IF = 8 0 A Forward voltage IF = 80 A, TJ = 175 °C IF = 80 A, TJ = 125 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 400 TYP. 1.1 0.92 0.98 50 3.5 MAX. 1.3 1.08 1.15 50 2 µA mA pF nH V UNITS Document Number: 93025 Revision: 30-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 80EBU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PTTM DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/µs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 0 A VR = 200 V dIF/dt = 200 A/µs MIN. TYP. 50 87 151 9.3 17.2 405 1300 MAX. 60 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, junction to heatsink Weight Mounting torque Marking device Case style PowerTabTM SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 0.18 MAX. 0.70 K/W 5.02 2.4 (20) 80EBU04 g oz. N·m (lbf · in) UNITS www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 93025 Revision: 30-Oct-08 80EBU04 Ultrafast Soft Recovery Diode, Vishay High Power Products 80 A FRED PTTM 1000 Reverse Current - I R (µA) 1000 T J = 175˚C 100 125˚C 10 1 0.1 0.01 25˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J J J 0.001 0 100 200 300 400 Reverse Voltage - VR (V) T = 125˚C T = 25˚C Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 10 Junction Capacitance - C T (pF) T J = 25˚C 100 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop - VFM (V) 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance Z thJC (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM 0.1 t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93025 Revision: 30-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 80EBU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PTTM 250 Vr = 200V Tj = 125˚C Tj = 25˚C 180 Allowable Case Temperature (°C) 160 140 120 100 Square wave (D = 0.50) 80% Rated Vr applied 200 IF = 160A IF = 80A IF = 40A trr ( ns ) DC 150 80 see note (1) 100 60 0 20 40 60 80 100 120 50 100 di F /dt (A/µs ) Average Forward Current - IF(AV) (A) 1000 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 4500 140 RMS Limit Average Power Loss ( Watts ) 4000 3500 3000 Qrr ( nC ) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) Vr = 200V Tj = 125˚C Tj = 25˚C D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 2500 2000 1500 1000 500 0 100 IF = 160A IF = 80A IF = 40A 1000 di F /dt (A/µs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 93025 Revision: 30-Oct-08 80EBU04 Ultrafast Soft Recovery Diode, Vishay High Power Products 80 A FRED PTTM VR = 200 V 0.01 Ω L = 70 µH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under cur ve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93025 Revision: 30-Oct-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 80EBU04 Vishay High Power Products Ultrafast Soft Recovery Diode, 80 A FRED PTTM ORDERING INFORMATION TABLE Device code 80 1 1 2 3 4 5 - E 2 B 3 U 4 04 5 Current rating (80 = 80 A) Single diode PowerTabTM (ultrafast/hyperfast only) Ultrafast recovery Voltage rating (04 = 400 V) LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95240 http://www.vishay.com/doc?95370 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 93025 Revision: 30-Oct-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1