80EBU04_11

VS-80EBU04 www.vishay.com Vishay Semiconductors Ultrafast Soft Recovery Diode, 80 A FRED Pt® FEATURES • Ultrafast recovery time • 175 °C max. operating junction temperature • Screw mounting only Cathode Anode • Designed and JEDEC-JESD47 qualified according to • Compliant to RoHS Directive 2002/95/EC • PowerTab® package PowerTab® BENEFITS • Reduced RFI and EMI • Higher frequency operation PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation PowerTab® 80 A 400 V 1.3 V See recovery table 175 °C Single die • Reduced snubbing • Reduced parts count DESCRIPTION/APPLICATIONS These diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning systems. The softness of the recovery eliminates the need for a snubber in most applications. These devices are ideally suited for HF welding, power converters and other applications where switching losses are not significant portion of the total losses. ABSOLUTE MAXIMUM RATINGS PARAMETER Cathode to anode voltage Continuous forward current Single pulse forward current Maximum repetitive forward current Operating junction and storage temperatures SYMBOL VR IF(AV) IFSM IFRM TJ, TStg TC = 101 °C TC = 25 °C Square wave, 20 kHz TEST CONDITIONS MAX. 400 80 800 160 - 55 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, Vr TEST CONDITIONS IR = 100 μA I F = 80 A Forward voltage VF IF = 80 A, TJ = 175 °C IF = 80 A, TJ = 125 °C Reverse leakage current Junction capacitance Series inductance IR CT LS VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body MIN. 400 TYP. 1.1 0.92 0.98 50 3.5 MAX. 1.3 1.08 1.15 50 2 μA mA pF nH V UNITS Revision: 15-Jun-11 Document Number: 93025 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 200 A/μs, VR = 30 V Reverse recovery time trr TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C I F = 80 A VR = 200 V dIF/dt = 200 A/μs MIN. TYP. 50 87 151 9.3 17.2 405 1300 MAX. 60 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Thermal resistance, junction to case Thermal resistance, junction to heatsink Weight Mounting torque Marking device Case style PowerTab® SYMBOL RthJC RthCS Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. 1.2 (10) TYP. 0.2 0.18 MAX. 0.70 K/W 5.02 2.4 (20) 80EBU04 g oz. N·m (lbf · in) UNITS Revision: 15-Jun-11 Document Number: 93025 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors 1000 T J = 175˚C Reverse Current - I R (µA) 1000 100 125˚C 10 1 0.1 0.01 25˚C Instantaneous Forward Current - I F (A) 100 T = 175˚C J J J 0.001 0 100 200 300 400 Reverse Voltage - VR (V) T = 125˚C T = 25˚C Fig. 1 - Typical Values of Reverse Current vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) 10 T J = 25˚C 100 1 0 0.5 1 1.5 2 2.5 Forward Voltage Drop - VFM (V) 10 1 10 100 1000 Reverse Voltage - VR (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Junction Capacitance vs. Reverse Voltage 1 Thermal Impedance Z thJC (°C/W) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) PDM 0.1 t1 t2 Notes: 1. Duty factor D = t1/ t2 2. Peak Tj = Pdm x ZthJC + Tc 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (Seconds) Fig. 3 - Maximum Thermal Impedance ZthJC Characteristics Revision: 15-Jun-11 Document Number: 93025 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors 250 Vr = 200V Tj = 125˚C Tj = 25˚C 180 Allowable Case Temperature (°C) 160 140 120 100 Square wave (D = 0.50) 80% Rated Vr applied 200 IF = 160A IF = 80A IF = 40A trr ( ns ) DC 150 80 see note (1) 100 60 0 20 40 60 80 100 120 50 100 di F /dt (A/µs ) Average Forward Current - IF(AV) (A) 1000 Fig. 2 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt 4500 140 RMS Limit Average Power Loss ( Watts ) 4000 3500 3000 Qrr ( nC ) 120 100 80 60 40 20 0 0 20 40 60 80 100 120 Average Forward Current - IF(AV) (A) Vr = 200V Tj = 125˚C Tj = 25˚C D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 2500 2000 1500 1000 500 0 100 IF = 160A IF = 80A IF = 40A 1000 di F /dt (A/µs ) Fig. 4 - Forward Power Loss Characteristics Fig. 6 - Typical Stored Charge vs. dIF/dt (1) Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR Revision: 15-Jun-11 Document Number: 93025 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 15-Jun-11 Document Number: 93025 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-80EBU04 www.vishay.com ORDERING INFORMATION TABLE Device code Vishay Semiconductors VS1 1 2 3 4 5 6 - 80 2 E 3 B 4 U 5 04 6 Vishay Semiconductors product Current rating (80 = 80 A) Single diode PowerTab® (ultrafast/hyperfast only) Ultrafast recovery Voltage rating (04 = 400 V) LINKS TO RELATED DOCUMENTS Dimensions Part marking information Application note www.vishay.com/doc?95240 www.vishay.com/doc?95370 www.vishay.com/doc?95179 Revision: 15-Jun-11 Document Number: 93025 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors PowerTab® DIMENSIONS in millimeters (inches) 15.90 (0.62) 15.60 (0.61) 15.60 (0.61) 14.80 (0.58) 1.35 (0.05) 1.20 (0.04) 8.45 (0.33) 8.20 (0.32) 4.20 (0.16) 4.00 (0.15) Lead 1 12.40 (0.48) 12.10 (0.47) 18.25 (0.71) 18.00 (0.70) 27.65 (1.08) 27.25 (1.07) Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) Lead 2 Ø 4.20 (Ø 0.16) Ø 4.00 (Ø 0.15) 5.45 REF. (0.21 REF.) 5.20 (0.20) 4.95 (0.19) 3.09 (0.12) 3.00 (0.11) 0.60 (0.02) 0.40 (0.01) 1.30 (0.05) 1.10 (0.04) 12.20 (0.48) 12.00 (0.47) 4.95 (0.19) 4.75 (0.18) Lead assignments Lead 1 = Cathode Lead 2 = Anode Revision: 03-Aug-11 Document Number: 95240 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 39.8 (1.56) 39.6 (1.55) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. 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