80EPF04PBF

80EPF..PbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 80 A FEATURES/DESCRIPTION Base common cathode 2, 4 The 80EPF..PbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. Pb-free Available RoHS* COMPLIANT The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. TO-247AC Anode 1 Anode 3 This product series has been designed and qualified for Industrial level and lead (Pb)-free. APPLICATIONS PRODUCT SUMMARY VF at 40 A trr VRRM < 1.1 V 70 ns 200 to 600 V • Output rectification and choppers and converters freewheeling in inverters, • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL VRRM IF(AV) IFSM trr VF TJ 1 A, - 100 A/µs 40 A, TJ = 25 °C Range Sinusoidal waveform CHARACTERISTICS VALUES 200 to 600 80 1000 70 1.1 - 40 to 150 UNITS V A ns V °C VOLTAGE RATINGS PART NUMBER 80EPF02PbF 80EPF04PbF 80EPF06PbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 17 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 95 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 80 850 1000 3610 5100 51 000 A2s A2√s A UNITS * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94106 Revision: 05-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1 80EPF..PbF Soft Recovery Series Vishay High Power Products ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 80 A, TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 150 °C VALUES 1.25 3.5 0.85 VR = Rated VRRM 0.1 17 UNITS V mΩ V mA Fast Soft Recovery Rectifier Diode, 80 A RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 40 Apk 25 A/µs 25 °C VALUES 190 3.4 0.5 0.5 UNITS ns A µC di dt Qrr IRM(REC) IFM trr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, junction to ambient Typical thermal resistance, case to heatsink Approximate weight minimum maximum SYMBOL TJ, TStg RthJC RthJA RthCS Mounting surface, smooth and greased DC operation TEST CONDITIONS VALUES - 40 to 150 0.35 40 0.2 6 0.21 6 (5) 12 (10) 80EPF02 Marking device Case style TO-247AC 80EPF04 80EPF06 g oz. kgf · cm (Ibf · in) °C/W UNITS °C Mounting torque www.vishay.com 2 For technical questions, contact: diodes-tech@vishay.com Document Number: 94106 Revision: 05-Jun-08 80EPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 80 A 150 180 Vishay High Power Products Maximum Allowable Case Temperature (°C) 140 130 Maximum Average Forward Power Loss (W) 80EPF.. Series RthJC (DC) = 0.35 K/W 160 140 120 100 80 60 40 20 0 0 Ø 120 110 100 90 80 0 10 20 30 40 50 30° 60° Conduction angle DC 180° 120° 90° 60° 30° RMS limit Ø Conduction period 80EPF.. Series TJ = 150 °C 20 40 60 80 100 120 140 120° 90° 60 70 180° 80 90 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Average Forward Current (A) Fig. 4 - Forward Power Loss Characteristics 150 1000 Maximum Allowable Case Temperature (°C) Peak Half Sine Wave Forward Current (A) 140 130 80EPF.. Series RthJC (DC) = 0.35 K/W 900 800 700 600 500 400 300 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s Ø 120 110 30° 100 90 80 0 20 40 60 80 60° 90° 120° Conduction period 80EPF.. Series 180° 100 DC 120 140 200 1 10 100 Average Forward Current (A) Fig. 2 - Current Rating Characteristics Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current 140 Maximum Average Forward Power Loss (W) 120 100 80 60 40 20 0 0 10 Peak Half Sine Wave Forward Current (A) 180° 120° 90° 60° 30° RMS limit 1000 900 800 700 600 500 400 300 Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied Ø Conduction angle 80EPF.. Series TJ = 150 °C 20 30 40 50 60 70 80 90 80EPF.. Series 0.1 200 0.01 1 Average Forward Current (A) Fig. 3 - Forward Power Loss Characteristics Pulse Train Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94106 Revision: 05-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 3 80EPF..PbF Soft Recovery Series Vishay High Power Products Instantaneous Forward Current (A) 1000 Fast Soft Recovery Rectifier Diode, 80 A 100 TJ = 25 °C TJ = 150 °C 10 80EPF.. Series 1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Instantaneous Forward Voltage (V) Fig. 7 - Forward Voltage Drop Characteristics 0.22 0.20 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 0 40 80 80EPF.. Series TJ = 25 °C IFM = 10 A IFM = 125 A IFM = 40 A 4.0 3.5 80EPF.. Series TJ = 25 °C IFM = 80 A IFM = 40 A IFM = 125 A IFM = 80 A IFM = 20 A Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 3.0 2.5 2.0 1.5 1.0 0.5 0 IFM = 20 A IFM = 10 A IFM = 1 A 120 160 200 IFM = 1 A 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C 0.6 0.5 0.4 IFM = 40 A 0.3 0.2 0.1 0 0 40 80 120 160 200 IFM = 20 A IFM = 10 A IFM = 1 A IFM = 80 A 14 12 80EPF.. Series TJ = 150 °C IFM = 80 A Qrr - Maximum Reverse Recovery Charge (µC) trr - Maximum Reverse Recovery Time (µs) 10 8 6 4 2 IFM = 1 A 0 0 40 80 120 160 200 IFM = 40 A IFM = 20 A IFM = 10 A 80EPF.. Series TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C www.vishay.com 4 For technical questions, contact: diodes-tech@vishay.com Document Number: 94106 Revision: 05-Jun-08 80EPF..PbF Soft Recovery Series Fast Soft Recovery Rectifier Diode, 80 A 22 20 80EPF.. Series TJ = 25 °C IFM = 125 A IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A 45 40 80EPF.. Series TJ = 150 °C IFM = 80 A IFM = 40 A IFM = 20 A IFM = 10 A IFM = 1 A Vishay High Power Products Irr - Maximum Reverse Recovery Current (A) Irr - Maximum Reverse Recovery Current (A) 200 18 16 14 12 10 8 6 4 2 0 0 35 30 25 20 15 10 5 0 IFM = 1 A 40 80 120 160 0 40 80 120 160 200 dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 12 - Recovery Current Characteristics, TJ = 25 °C dI/dt - Rate of Fall of Forward Current (A/µs) Fig. 13 - Recovery Current Characteristics, TJ = 150 °C ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value (DC operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single pulse 80EPF.. Series 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94106 Revision: 05-Jun-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 5 80EPF..PbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Device code Fast Soft Recovery Rectifier Diode, 80 A 80 1 1 2 3 4 5 6 - E 2 P 3 F 4 06 5 PbF 6 Current rating (80 = 80 A) Circuit configuration: E = Single diode Package: P = TO-247AC Type of silicon: F = Fast diode Voltage code x 100 = VRRM None = Standard production PbF = Lead (Pb)-free 02 = 200 V 04 = 400 V 06 = 600 V LINKS TO RELATED DOCUMENTS Dimensions Part marking information http://www.vishay.com/doc?95223 http://www.vishay.com/doc?95226 www.vishay.com 6 For technical questions, contact: diodes-tech@vishay.com Document Number: 94106 Revision: 05-Jun-08 Outline Dimensions www.vishay.com DIMENSIONS in millimeters and inches (3) B (2) R/2 Q 2xR (2) 1 (5) L1 C L See view B 2 x b2 3xb 0.10 M C A M 2x e b4 A1 C A (4) E1 0.01 M D B M View A - A 2 3 E N S A2 A D2 A (6) Ø P Ø K M DBM A (Datum B) FP1 Vishay Semiconductors D D Thermal pad 4 D1 (4) Planting (b1, b3, b5) Base metal D DE E C C Lead assignments Diodes 1. - Anode/open 2. - Cathode 3. - Anode (c) c1 (b, b2, b4) (4) Section C - C, D - D, E - E View B SYMBOL A A1 A2 b b1 b2 b3 b4 b5 c c1 D D1 MILLIMETERS MIN. MAX. 4.65 5.31 2.21 2.59 1.50 2.49 0.99 1.40 0.99 1.35 1.65 2.39 1.65 2.37 2.59 3.43 2.59 3.38 0.38 0.86 0.38 0.76 19.71 20.70 13.08 - INCHES MIN. MAX. 0.183 0.209 0.087 0.102 0.059 0.098 0.039 0.055 0.039 0.053 0.065 0.094 0.065 0.094 0.102 0.135 0.102 0.133 0.015 0.034 0.015 0.030 0.776 0.815 0.515 - NOTES SYMBOL D2 E E1 e FK L L1 N P P1 Q R S 3 4 MILLIMETERS MIN. MAX. 0.51 1.30 15.29 15.87 13.72 5.46 BSC 2.54 14.20 16.10 3.71 4.29 7.62 BSC 3.56 3.66 6.98 5.31 5.69 4.52 5.49 5.51 BSC INCHES MIN. MAX. 0.020 0.051 0.602 0.625 0.540 0.215 BSC 0.010 0.559 0.634 0.146 0.169 0.3 0.14 0.144 0.275 0.209 0.224 1.78 0.216 0.217 BSC NOTES 3 Notes (1) Dimensioning and tolerancing per ASME Y14.5M-1994 (2) Contour of slot optional (3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Thermal pad contour optional with dimensions D1 and E1 (5) Lead finish uncontrolled in L1 (6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154") (7) Outline conforms to JEDEC outline TO-247 with exception of dimension c Revision: 16-Jun-11 Document Number: 95223 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1