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80PF120

80PF120

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    80PF120 - Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
80PF120 数据手册
80PF(R)...(W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R)... 80PF(R)...W FEATURES • High surge current capability • Designed for a wide range of applications • Stud cathode and stud anode version • Wire version available • Low thermal resistance • UL approval pending RoHS COMPLIANT DO-203AB (DO-5) DO-203AB (DO-5) • RoHS compliant • Designed and qualified for multiple level TYPICAL APPLICATIONS • Battery chargers PRODUCT SUMMARY IF(AV) 80 A • Converters • Power supplies • Machine tool controls • Welding MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM TJ 50 Hz 60 Hz 50 Hz 60 Hz Range TEST CONDITIONS VALUES 80 TC 140 126 1500 1570 11 250 10 230 400 to 1200 - 55 to 180 UNITS A °C A A A2 s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 80PF(R)...(W) 80 120 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 960 1440 9 IRRM MAXIMUM AT TJ = 150 °C mA Document Number: 93526 Revision: 01-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 80PF(R)...(W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage Low level value of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO) rf VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied TEST CONDITIONS 180° conduction, half sine wave VALUES 80 140 126 1500 1570 1260 Sinusoidal half wave, initial TJ = 150 °C 1320 11 250 10 230 7950 7200 112 500 0.73 3.0 1.40 A2√s V mΩ V A2 s A UNITS A °C A t = 0.1 to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum Ipk = 220 A, TJ = 25 °C, tp = 400 µs rectangular wave THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Tighting on nut (1) Not lubricated threads Tighting on hexagon (2) Lubricated threads TEST CONDITIONS VALUES - 55 to 180 0.30 K/W 0.25 3.4 + 0 - 10 % (30) 2.3 + 0 - 10 % (20) 15.8 0.56 See dimensions - link at the end of datasheet UNITS °C Allowable mounting torque N·m (lbf · in) g oz. Approximate weight Case style DO-203AB (DO-5) Notes (1) As general recommendation we suggest to tight on Hexagon and not on nut (2) Torque must be applicable only to Hexagon and not to plastic structure www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93526 Revision: 01-Oct-08 80PF(R)...(W) Series Standard Recovery Diodes, Vishay High Power Products Generation 2 DO-5 (Stud Version), 80 A ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.14 0.16 0.21 0.30 0.50 RECTANGULAR CONDUCTION 0.10 0.17 0.22 0.31 0.50 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 180 170 160 80PF(R) Series RthJC = 0.3 K/W 180 170 160 150 30° 80PF(R) Series RthJC (DC) = 0.3 K/W Conduction Angle Conduction Period 150 140 180° 130 120 110 0 30° 60° 120° 90° 140 130 120 0 20 60° 90° 120° 180° DC 10 20 30 40 50 60 70 80 90 Average Forward Current (A) 40 60 80 100 120 140 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Allowable Forward Power Loss (W) 140 120 100 80 60 40 20 0 0 180° 0. 0.5 0.3 120° 90° 60° 30° RMS Limit K/ W 7 K/ W /W 1K 1.5 2K K/W K/W /W /W 3K Conduction Angle 80PF(R) Series Tj = 180°C 5 K/W 0 10 20 30 40 50 60 70 80 Average Forward Current (A) 30 60 90 120 150 180 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93526 Revision: 01-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 80PF(R)...(W) Series Vishay High Power Products Maximum Allowable Forward Power Loss (W) Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 140 120 100 80 DC 180° 120° 90° 60° 0.5 K/ W 0.3 0. 7 1K 1.5 2K K/W K/ W /W K/W /W /W 30° 60 RMS Limit 3K 40 20 0 0 20 40 60 Conduction Period 5 K/W 80PF(R) Series Tj = 180°C 80 0 100 120 140 30 60 90 120 150 180 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Peak Haf Sine Wave Forward Current (A) 1400 1300 1200 1100 1000 900 800 700 600 500 400 1 1000 Rated Vrrm Applied Following Surge. Initial Tj = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Instantaneous Forward Current (A) At Any Rated Load Condition And With 100 10 Tj = 25°C Tj = 180°C 80PF(R) Series 80PF(R) Series 1 10 100 0 1 2 3 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Peak Haf Sine Wave Forward Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 1400 Initial Tj = 150°C No Voltage Reapplied 1200 Rated Vrrm Reapplied Transient Thermal Impedance Z thJC (K/W) 1600 1 Steady State Value RthJC = 0.3 K/W (DC Operation) 1000 800 600 400 80PF(R) Series 0.1 80PF(R) Series 200 0.01 0.1 Pulse Train Duration (s) 1 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93526 Revision: 01-Oct-08 80PF(R)...(W) Series Standard Recovery Diodes, Vishay High Power Products Generation 2 DO-5 (Stud Version), 80 A ORDERING INFORMATION TABLE Device code 80 1 1 PF 2 - R 3 120 4 W 5 80 = Standard device 82 = Isolated lead on standard terminal with silicone sleeve available for 1200 V only (red = Reverse polarity) (blue = Normal polarity) 2 3 4 5 - PF = Plastic package None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) Voltage code x 10 = VRRM (see Voltage Ratings table) None = Standard terminal (see dimensions for 80PF(R)... - link at the end of datasheet) W = Wire terminal (see dimensions for 80PF(R)...W - link at the end of datasheet) LINKS TO RELATED DOCUMENTS Dimensions http://www.vishay.com/doc?95345 Document Number: 93526 Revision: 01-Oct-08 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
80PF120
### 物料型号 - 80PF(R)...(W) Series Vishay High Power Products:这是Vishay品牌的高功率产品系列,包括标准恢复二极管,第二代DO-5(Stud Version),80A。

### 器件简介 - Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A:这是第二代标准恢复二极管,DO-5(有柱版本),最大电流80A。

### 引脚分配 - Stud cathode and stud anode version:有柱阴极和柱阳极版本。 - Wire version available:提供线版本。

### 参数特性 - IF(AV):最大平均正向电流80A。 - Tc:结温140°C。 - IF(RMS):最大RMS正向电流126A。 - IFSM:最大单周期正向非重复浪涌电流1500A(50Hz)和1570A(60Hz)。 - VRRM:最大重复峰值反向电压范围400V至1200V。 - TJ:工作和存储温度范围-55至180°C。

### 功能详解 - High surge current capability:高浪涌电流能力。 - Designed for a wide range of applications:为广泛的应用而设计。 - Low thermal resistance:低热阻。 - UL approval pending:UL认证待定。 - RoHS compliant:符合RoHS标准。

### 应用信息 - Battery chargers:电池充电器。 - Converters:转换器。 - Power supplies:电源。 - Machine tool controls:机床控制。 - Welding:焊接。

### 封装信息 - DO-203AB (DO-5):封装类型为DO-203AB(DO-5)。 - Standard terminal:标准终端。 - Wire terminal:线终端。
80PF120 价格&库存

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