80PFR80W

80PF(R)...(W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 80PF(R)... 80PF(R)...W FEATURES • High surge current capability • Designed for a wide range of applications • Stud cathode and stud anode version • Wire version available • Low thermal resistance • UL approval pending DO-203AB (DO-5) DO-203AB (DO-5) • Compliant to RoHS directive 2002/95/EC • Designed and qualified for multiple level TYPICAL APPLICATIONS • Battery chargers PRODUCT SUMMARY IF(AV) 80 A • Converters • Power supplies • Machine tool controls • Welding MAJOR RATINGS AND CHARACTERISTICS PARAMETER IF(AV) IF(RMS) IFSM I2 t VRRM TJ 50 Hz 60 Hz 50 Hz 60 Hz Range TEST CONDITIONS VALUES 80 TC 140 126 1500 1570 11 250 10 230 400 to 1200 - 55 to 180 UNITS A °C A A A2 s V °C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 40 80PF(R)...(W) 80 120 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 400 800 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 500 960 1440 9 IRRM MAXIMUM AT TJ = 150 °C mA Document Number: 93526 Revision: 20-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 1 80PF(R)...(W) Series Vishay High Power Products Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A FORWARD CONDUCTION PARAMETER Maximum average forward current at case temperature Maximum RMS forward current SYMBOL IF(AV) IF(RMS) t = 10 ms Maximum peak, one-cycle forward, non-repetitive surge current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage Low level value of forward slope resistance Maximum forward voltage drop I 2 √t VF(TO) rf VFM No voltage reapplied 100 % VRRM reapplied No voltage reapplied 100 % VRRM reapplied TEST CONDITIONS 180° conduction, half sine wave VALUES 80 140 126 1500 1570 1260 Sinusoidal half wave, initial TJ = 150 °C 1320 11 250 10 230 7950 7200 112 500 0.73 3.0 1.40 A2√s V mΩ V A2 s A UNITS A °C A t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum Ipk = 220 A, TJ = 25 °C, tp = 400 µs rectangular wave THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range Maximum thermal resistance, junction to case Maximum thermal resistance, case to heatsink SYMBOL TJ, TStg RthJC RthCS DC operation Mounting surface, smooth, flat and greased Not lubricated thread, tighting on nut (1) Lubricated thread, tighting on nut (1) Not lubricated thread, tighting on hexagon (2) Lubricated thread, tighting on hexagon (2) Approximate weight Case style See dimensions - link at the end of datasheet TEST CONDITIONS VALUES - 55 to 180 0.30 K/W 0.25 3.4 (30) 2.3 (20) 4.2 (37) 3.2 (28) 15.8 0.56 g oz. N·m (lbf · in) UNITS °C Maximum allowable mounting torque (+ 0 %, - 10 %) DO-203AB (DO-5) Notes (1) Recommended for pass-through holes (2) Torque must be appliable only to hexagon and not to plastic structure, recommended for holed heatsink www.vishay.com 2 For technical questions, contact: ind-modules@vishay.com Document Number: 93526 Revision: 20-May-09 80PF(R)...(W) Series Standard Recovery Diodes, Vishay High Power Products Generation 2 DO-5 (Stud Version), 80 A ΔRthJC CONDUCTION CONDUCTION ANGLE 180° 120° 90° 60° 30° SINUSOIDAL CONDUCTION 0.14 0.16 0.21 0.30 0.50 RECTANGULAR CONDUCTION 0.10 0.17 0.22 0.31 0.50 TJ = TJ maximum K/W TEST CONDITIONS UNITS Note • The table above shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC Maximum Allowable Case Temperature (°C) Maximum Allowable Case Temperature (°C) 180 170 160 80PF(R) Series RthJC = 0.3 K/W 180 170 160 150 30° 80PF(R) Series RthJC (DC) = 0.3 K/W Conduction Angle Conduction Period 150 140 180° 130 120 110 0 30° 60° 120° 90° 140 130 120 0 20 60° 90° 120° 180° DC 10 20 30 40 50 60 70 80 90 Average Forward Current (A) 40 60 80 100 120 140 Average Forward Current (A) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics Maximum Allowable Forward Power Loss (W) 140 120 100 80 60 40 20 0 0 180° 0. 0.5 0.3 120° 90° 60° 30° RMS Limit K/ W 7 K/ W /W 1K 1.5 2K K/W K/W /W /W 3K Conduction Angle 80PF(R) Series Tj = 180°C 5 K/W 0 10 20 30 40 50 60 70 80 Average Forward Current (A) 30 60 90 120 150 180 Maximum Allowable Ambient Temperature (°C) Fig. 3 - Forward Power Loss Characteristics Document Number: 93526 Revision: 20-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 3 80PF(R)...(W) Series Vishay High Power Products Maximum Allowable Forward Power Loss (W) Standard Recovery Diodes, Generation 2 DO-5 (Stud Version), 80 A 140 120 100 80 DC 180° 120° 90° 60° 0.5 K/ W 0.3 0. 7 1K 1.5 2K K/W K/ W /W K/W /W /W 30° 60 RMS Limit 3K 40 20 0 0 20 40 60 Conduction Period 5 K/W 80PF(R) Series Tj = 180°C 80 0 100 120 140 30 60 90 120 150 180 Average Forward Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 4 - Forward Power Loss Characteristics Peak Haf Sine Wave Forward Current (A) 1400 1300 1200 1100 1000 900 800 700 600 500 400 1 1000 Rated Vrrm Applied Following Surge. Initial Tj = 150°C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s Instantaneous Forward Current (A) At Any Rated Load Condition And With 100 10 Tj = 25°C Tj = 180°C 80PF(R) Series 80PF(R) Series 1 10 100 0 1 2 3 Number Of Equal Amplitude Half Cycle Current Pulses (N) Instantaneous Forward Voltage (V) Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 7 - Forward Voltage Drop Characteristics Peak Haf Sine Wave Forward Current (A) Maximum Non Repetitive Surge Current Versus Pulse Train Duration. 1400 Initial Tj = 150°C No Voltage Reapplied 1200 Rated Vrrm Reapplied Transient Thermal Impedance Z thJC (K/W) 1600 1 Steady State Value RthJC = 0.3 K/W (DC Operation) 1000 800 600 400 80PF(R) Series 0.1 80PF(R) Series 200 0.01 0.1 Pulse Train Duration (s) 1 0.01 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 6 - Maximum Non-Repetitive Surge Current Fig. 8 - Thermal Impedance ZthJC Characteristics www.vishay.com 4 For technical questions, contact: ind-modules@vishay.com Document Number: 93526 Revision: 20-May-09 80PF(R)...(W) Series Standard Recovery Diodes, Vishay High Power Products Generation 2 DO-5 (Stud Version), 80 A ORDERING INFORMATION TABLE Device code 80 1 1 PF 2 - R 3 120 4 W 5 80 = Standard device 82 = Isolated lead on standard terminal with silicone sleeve available for 1200 V only (red = Reverse polarity) (blue = Normal polarity) 2 3 4 5 - PF = Plastic package None = Stud normal polarity (cathode to stud) R = Stud reverse polarity (anode to stud) Voltage code x 10 = VRRM (see Voltage Ratings table) None = Standard terminal (see dimensions for 80PF(R)... - link at the end of datasheet) W = Wire terminal (see dimensions for 80PF(R)...W - link at the end of datasheet) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95345 Document Number: 93526 Revision: 20-May-09 For technical questions, contact: ind-modules@vishay.com www.vishay.com 5 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W) and 95PF(R)...(W) Series DIMENSIONS FOR 80PF(R), 50PF(R) AND 95PF(R) SERIES in millimeters 6.45 MIN. Ø3 4.2 MAX. 1.2 MAX. 3.5 MIN. 4 MIN. Plastic cap. 25.4 MAX. 11.45 MAX. 2.4 REF. 11 ± 0.4 1/4"28-UNF-2A For metric devices: M6 x 1 17.25 MAX. Ø 15.6 MAX. Ø 16.8 MAX. 18.9 + 0.1 0.0 Note • For metric device please contact factory Document Number: 95345 Revision: 26-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay Semiconductors DO-203AB (DO-5) for 50PF(R)...(W), 80PF(R)...(W) and 95PF(R)...(W) Series DIMENSIONS FOR 80PF(R)...(W), 50PF(R)...(W) AND 95PF(R)...(W) SERIES in millimeters 2.05 MAX. Plastic cap. 25.4 MAX. 11.45 MAX. 2.4 REF. 11 ± 0.4 1/4"-28-UNF-2A For metric devices: M6 x 1 17.25 MAX. Ø 15.6 MAX. Ø 16.8 MAX. 18.9 + 0.1 0.0 Note • For metric device please contact factory www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 95345 Revision: 26-Aug-08 Outline Dimensions DO-203AB (DO-5) for 50PF(R)...(W), Vishay Semiconductors 80PF(R)...(W) and 95PF(R)...(W) Series DIMENSIONS FOR 52PF(R), 82PF(R) AND 97PF(R) SERIES in millimeters 12.2 MAX. Ø 7 MAX. 6.6 mm2 external lead with blue or red sleeve insulation 123 134.4 Plastic cap. 11.45 MAX. 2.4 REF. 11 ± 0.4 1/4"-28-UNF-2A For metric devices: M6 x 1 Note • For metric device please contact factory Document Number: 95345 Revision: 26-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000