8E2TX06-M

VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • • • • • • • • • • Hyperfast recovery time, extremely low Qrr 175 °C maximum operating junction temperature For PFC CCM operation True 2 pin package Low forward voltage drop Low leakage current Fully isolated package (VINS = 2500 VRMS) Compliant to RoHS directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition Designed and qualified for industrial level 2L TO-220AC Base cathode 2 2L TO-220 FULL-PAK 1 Cathode 3 Anode 1 Cathode 2 Anode DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. VS-8E2TX06 VS-8E2TX06FP PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 2L TO-220AC, 2L TO-220 FP 8A 600 V 3.2 V 13 ns 175 °C Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM FULL-PAK IF(AV) IFSM IFM TJ, TStg TC = 129 °C TC = 71 °C TJ = 25 °C TEST CONDITIONS VALUES 600 8 77 16 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.5 1.6 0.3 30 6 8 MAX. 3.2 2.0 40 400 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93171 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 100 A/μs, VR = 30 V IF = 8.0 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C Reverse recovery time trr TJ = 125 °C IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V IF = 8 A dIF/dt = 600 A/μs VR = 390 V MIN. TYP. 13 14 16 35 25 2.3 3.8 10 16 62 131 MAX. 18 23 A nC ns UNITS TJ = 25 °C Peak recovery current IRRM TJ = 125 °C TJ = 25 °C Reverse recovery charge Qrr TJ = 125 °C THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6 (5) Case style TO-220 Case style TO-220 FULL-PAK TYP. 2 5 0.5 2 0.07 MAX. 175 2.4 5.5 70 12 (10) 8E2TX06 8E2TX06FP g oz. kgf · cm (lbf · in) °C/W UNITS °C FULL-PAK Thermal resistance, junction to ambient per leg Typical thermal resistance, case to heatsink Weight Mounting torque Marking device www.vishay.com 2 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93171 Revision: 18-Aug-10 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors IF - Instantaneous Forward Current (A) 100 1000 IR - Reverse Current (mA) 100 10 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C TJ = 50 °C 10 TJ = 175 °C 1 0.1 0.01 0.001 0.0001 TJ = 75 °C TJ = 150 °C 1 TJ = 25 °C 0.1 0.2 TJ = 25 °C 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 93171_02 0 10 20 30 40 50 93171_01 VF - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 1 - Typical Forward Voltage Drop Characteristics 100 CT - Junction Capacitance (pF) 10 1 0 93171_03 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.01 0.1 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 93171_04 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (TO-220) Document Number: 93171 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® 10 ZthJC - Thermal Impedance (°C/W) 1 Single pulse (thermal resistance) 0.1 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.0001 0.001 0.01 0.1 1 93171_05 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Allowable Case Temperature (°C) Allowable Case Temperature (°C) 180 170 160 DC 150 140 130 120 See note (1) 110 0 2 4 6 8 10 12 Square wave (D = 0.50) 80 % rated VR applied 170 150 130 DC 110 90 70 50 See note (1) 30 0 2 4 6 8 10 12 Square wave (D = 0.50) 80 % rated VR applied 93171_06 IF(AV) - Average Forward Current (A) Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current (TO-220) 25 93171_07 IF(AV) - Average Forward Current (A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) Average Power Loss (W) 20 15 RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 DC 0 2 4 6 8 10 12 10 5 0 93171_08 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93171 Revision: 18-Aug-10 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 40 40 35 30 IF = 8 A, TJ = 125 °C 30 IF = 8 A, TJ = 125 °C Qrr (nC) 20 IF = 8 A, TJ = 25 °C trr (ns) 25 20 IF = 8 A, TJ = 25 °C 15 10 100 93171_09 1000 10 100 93171_10 1000 dIF/dt (A/μs) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt dIF/dt (A/μs) Fig. 10 - Typical Stored Charge vs. dIF/dt VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 93171 Revision: 18-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 5 VS-8E2TX06-E, VS-8E2TX06-M, VS-8E2TX06FP-E Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 9 8 2 - E 3 2 4 T 5 X 6 06 7 FP 8 -E 9 Vishay Semiconductors product suffix Current rating (8 = 8 A) Circuit configuration: E = Single diode 2 = True 2 pin package T = TO-220 X = Hyperfast recovery time Voltage code (06 = 600 V) None = TO-220 FP = FULL-PAK Environmental digit: -E = RoHS compliant and terminations lead (Pb)-free -M = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8E2TX06-E VS-8E2TX06-M VS-8E2TX06FP-E QUANTITY PER TUBE 50 50 50 MINIMUM ORDER QUANTITY 1000 1000 1000 PACKAGING DESCRIPTION Antistatic plastic tubes Antistatic plastic tubes Antistatic plastic tubes LINKS TO RELATED DOCUMENTS Dimensions TO-220AC TO-220 FULL-PAK TO-220AC TO-220 FULL-PAK www.vishay.com/doc?95259 www.vishay.com/doc?95260 www.vishay.com/doc?95391 www.vishay.com/doc?95392 www.vishay.com/doc?95388 Part marking information Packaging information www.vishay.com 6 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 93171 Revision: 18-Aug-10 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 DIMENSIONS in millimeters and inches 0.002" A E ØP B Q H1 A F 0.05 mm D 0.150" REF. 45° Ø 2.0 mm REF. L1 b1 L b Term. 4 c 60° 1 e 2 J1 SYMBOL A b b1 c D E e F H1 J1 L L1 (1) MILLIMETERS MIN. 4.32 0.71 1.15 0.36 14.99 10.04 5.08 BSC 1.22 5.97 2.54 13.47 3.31 3.79 2.60 1.37 6.47 2.79 13.97 3.81 3.88 2.84 0.048 0.235 0.100 0.530 0.130 0.149 0.102 MAX. 4.57 0.91 1.39 0.53 15.49 10.41 MIN. 0.170 0.028 0.045 0.014 0.590 0.395 INCHES MAX. 0.180 0.036 0.055 0.021 0.610 0.410 0.200 BSC 0.054 0.255 0.110 0.550 0.150 0.153 0.112 ØP Q Notes (1) Lead dimension and finish uncontrolled in L 1 • These dimensions are within allowable dimensions of JEDEC TO-220AB rev. J outline dated 3-24-87 • Controling dimension: Inch Document Number: 95259 Revision: 21-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products True 2 Pin TO-220 FULL-PAK DIMENSIONS in millimeters and inches A ØQ F E Q1 H1 D Q2 θ L1 b1 L b e J1 C SYMBOL A b b1 C D E e F H1 J1 L L1 ØQ Q1 Q2 θ MILLIMETERS MIN. 4.53 0.71 1.15 0.36 15.67 9.96 5.08 typical 2.34 6.50 2.56 12.78 2.23 2.98 3.10 14.80 0° 2.74 6.90 2.96 13.18 2.63 3.38 3.50 15.20 5° 0.092 0.256 0.101 0.503 0.088 0.117 0.122 0.583 0° MAX. 4.93 0.91 1.39 0.53 16.07 10.36 MIN. 0.178 0.028 0.045 0.014 0.617 0.392 INCHES MAX. 0.194 0.036 0.055 0.021 0.633 0.408 0.200 typical 0.107 0.272 0.117 0.519 0.104 0.133 0.138 0.598 5° Document Number: 95260 Revision: 22-Jan-10 For technical questions concerning discrete products, contact: diodestech@vishay.com For technical questions concerning module products, contact: indmodules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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