8ETH03-1TRRPBF

VS-8ETH03SPbF, VS-8ETH03-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt® FEATURES VS-8ETH03SPbF VS-8ETH03-1PbF • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Base cathode 2 2 • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified 1 N/C 3 Anode 1 N/C 3 Anode DESCRIPTION/APPLICATIONS Vishay HPP’s 300 V series are the state of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop and hyperfast recovery time. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, dc-to-dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. D2PAK TO-262 PRODUCT SUMMARY trr IF(AV) VR 35 ns 8A 300 V ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM TJ, TStg TC = 155 °C TC = 25 °C TEST CONDITIONS MAX. 300 8 100 - 65 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 125 °C VR = VR rated TJ = 125 °C, VR = VR rated VR = 300 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 300 TYP. 1.0 0.83 0.02 6.0 31 8 MAX. 1.25 1.00 20 200 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 94025 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-8ETH03SPbF, VS-8ETH03-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER Reverse recovery time SYMBOL trr TEST CONDITIONS IF = 1 A, dIF/dt = - 50 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = - 200 A/μs VR = 200 V MIN. TYP. 27 40 2.2 5.3 30 106 MAX. 35 A ns UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style D2PAK Case style TO-262 SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 1.45 0.2 2.0 0.07 MAX. 175 2.5 70 12 (10) 8ETH03S 8ETH03-1 g oz. kgf · cm (lbf · in) °C/W UNITS °C www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94025 Revision: 11-Mar-10 VS-8ETH03SPbF, VS-8ETH03-1PbF Hyperfast Rectifier, 8 A FRED Pt® 100 1000 Vishay High Power Products IR - Reverse Current (µA) 100 10 1 0.1 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C IF - Instantaneous Forward Current (A) 10 TJ = 175 °C TJ = 125 °C TJ = 25 °C TJ = 25 °C 0.01 0.001 1 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 50 100 150 200 250 300 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 50 100 150 200 250 300 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 ZthJC - Thermal Impedance (°C/W) 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.01 0.1 1 . 10 0.0001 0.001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94025 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-8ETH03SPbF, VS-8ETH03-1PbF Vishay High Power Products 180 Hyperfast Rectifier, 8 A FRED Pt® 100 Allowable Case Temperature (°C) 170 DC 150 Square wave (D = 0.50) Rated VR applied trr (ns) 160 IF = 8 A , TJ = 125 °C 140 See note (1) 130 0 2 4 6 8 10 12 14 10 100 IF = 8 A , TJ = 25 °C 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 10 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 1000 Average Power Loss (W) 8 RMS limit D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50 IF = 8 A , TJ = 125 °C 100 IF = 8 A , TJ = 25 °C 4 2 DC Qrr (nC) 12 6 0 0 2 4 6 8 10 10 100 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94025 Revision: 11-Mar-10 VS-8ETH03SPbF, VS-8ETH03-1PbF Hyperfast Rectifier, 8 A FRED Pt® VR = 200 V Vishay High Power Products 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94025 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-8ETH03SPbF, VS-8ETH03-1PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Hyperfast Rectifier, 8 A FRED Pt® VS1 1 2 3 4 5 6 7 8 - 8 2 E 3 T 4 H 5 03 6 S 7 TRL PbF 8 9 HPP product suffix Current rating (8 A) E = Single diode T = TO-220, D2PAK H = Hyperfast rectifier Voltage rating (03 = 300 V) S = D2PAK -1 = TO-262 None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D2PAK package) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94025 Revision: 11-Mar-10 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 (7) e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A B A c2 E D B B L (2) 3 x b2 3xb 2xe 0.010 M A M B c A1 A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3) Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4) (b, b2) Section B - B and C - C Scale: None Lead tip SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2 MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71 (6) INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346 NOTES 4 4 4 2 3 2, 3 3 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com 2 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1