8ETX06-1TRRPBF

VS-8ETX06SPbF, VS-8ETX06-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt® VS-8ETX06SPbF VS-8ETX06-1PbF FEATURES • Hyperfast recovery time • Low forward voltage drop • Low leakage current • 175 °C operating junction temperature Base cathode 2 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Halogen-free according to IEC 61249-2-21 definition • Compliant to RoHS directive 2002/95/EC • AEC-Q101 qualified 1 N/C 3 Anode 1 N/C 3 Anode D2PAK TO-262 DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the ac-to-dc section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. PRODUCT SUMMARY trr (typical) IF(AV) VR 15 ns 8A 600 V ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg TC = 143 °C TJ = 25 °C TEST CONDITIONS MAX. 600 8 110 18 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.3 1.4 0.3 35 17 8.0 MAX. 3.0 1.7 50 500 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 94033 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 VS-8ETX06SPbF, VS-8ETX06-1PbF Vishay High Power Products Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr trr IRRM Qrr TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 15 16 17 40 2.3 4.5 20 100 31 12 195 MAX. 19 24 A ns UNITS Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device Case style D2PAK Case style TO-262 SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDITIONS MIN. - 65 6.0 (5.0) TYP. 1.4 0.5 2.0 0.07 MAX. 175 2 70 12 (10) 8ETX06S 8ETX06-1 g oz. kgf · cm (lbf · in) °C/W UNITS °C www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94033 Revision: 11-Mar-10 VS-8ETX06SPbF, VS-8ETX06-1PbF Hyperfast Rectifier, 8 A FRED Pt® 100 1000 Vishay High Power Products IF - Instantaneous Forward Current (A) IR - Reverse Current (mA) 100 10 1 0.1 0.01 0.001 0.0001 TJ = 175 °C TJ = 150 °C TJ = 125 °C TJ = 100 °C 10 TJ = 175 °C TJ = 150 °C TJ = 25 °C 1 TJ = 25 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM t1 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94033 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 VS-8ETX06SPbF, VS-8ETX06-1PbF Vishay High Power Products 180 170 40 160 150 140 130 Hyperfast Rectifier, 8 A FRED Pt® 50 Allowable Case Temperature (°C) DC IF = 8 A VR = 390 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 16 A trr (ns) Square wave (D = 0.50) Rated VR applied See note (1) 30 20 IF = 8 A 4 6 8 10 12 10 100 120 0 2 1000 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current 20 18 dIF/dt (A/µs) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 300 250 Average Power Loss (W) 16 VR = 390 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A RMS limit 14 200 Qrr (nC) 12 10 8 6 4 2 0 150 100 50 0 100 DC D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 6 8 10 12 14 IF = 16 A IF = 8 A 0 2 4 1000 IF(AV) - Average Forward Current (A) Fig. 6 - Forward Power Loss Characteristics Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR dIF/dt (A/µs) Fig. 8 - Typical Stored Charge vs. dIF/dt www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94033 Revision: 11-Mar-10 VS-8ETX06SPbF, VS-8ETX06-1PbF Hyperfast Rectifier, 8 A FRED Pt® VR = 200 V Vishay High Power Products 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 94033 Revision: 11-Mar-10 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 VS-8ETX06SPbF, VS-8ETX06-1PbF Vishay High Power Products ORDERING INFORMATION TABLE Device code Hyperfast Rectifier, 8 A FRED Pt® VS1 1 2 3 4 5 6 7 8 - 8 2 E 3 T 4 X 5 06 6 S 7 TRL PbF 8 9 HPP product suffix Current rating (8 A) E = Single diode T = TO-220, D2PAK X = Hyperfast rectifier Voltage rating (06 = 600 V) S = D2PAK -1 = TO-262 None = Tube (50 pieces) TRL = Tape and reel (left oriented, for D2PAK package) TRR = Tape and reel (right oriented, for D2PAK package) 9 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model www.vishay.com/doc?95014 www.vishay.com/doc?95008 www.vishay.com/doc?95032 www.vishay.com/doc?95393 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94033 Revision: 11-Mar-10 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR D2PAK in millimeters and inches Conforms to JEDEC outline D2PAK (SMD-220) (2)(3) E (3) L1 4 (D1) (3) D H 1 L2 B B A 2 x b2 2xb 0.010 M A M B 2x e Gauge plane 0° to 8° Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip L3 L L4 Detail “A” Rotated 90 °CW Scale: 8:1 A1 B Seating plane (b, b2) Section B - B and C - C Scale: None (c) c1 (4) ± 0.004 M B H C c E1 View A - A Plating (4) b1, b3 Base Metal (3) 2.64 (0.103) 2.41 (0.096) 2.32 MIN. (0.08) 2 3 (2) Detail A 17.90 (0.70) 15.00 (0.625) 3.81 MIN. (0.15) 9.65 MIN. (0.38) A A c2 A (E) B Pad layout 11.00 MIN. (0.43) SYMBOL A A1 b b1 b2 b3 c c1 c2 D MILLIMETERS MIN. 4.06 0.00 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 MAX. 4.83 0.254 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 INCHES MIN. 0.160 0.000 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 MAX. 0.190 0.010 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 NOTES SYMBOL D1 E E1 MILLIMETERS MIN. 6.86 9.65 7.90 14.61 1.78 1.27 4.78 MAX. 8.00 10.67 8.80 15.88 2.79 1.65 1.78 5.28 INCHES MIN. 0.270 0.380 0.311 0.575 0.070 0.050 0.188 MAX. 0.315 0.420 0.346 0.625 0.110 0.066 0.070 0.208 NOTES 3 2, 3 3 4 4 4 2 (7) e H L L1 L2 L3 L4 2.54 BSC 0.100 BSC 3 0.25 BSC 0.010 BSC Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch Document Number: 95014 Revision: 31-Mar-09 Outline conforms to JEDEC outline TO-263AB For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Outline Dimensions Vishay High Power Products D2PAK, TO-262 DIMENSIONS FOR TO-262 in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A (3) L1 Seating plane 1 L2 23 C C D1 (3) A B A c2 E D B B L (2) 3 x b2 3xb 2xe 0.010 M A M B c A1 A E1 Section A - A Plating (4) b1, b3 Base metal c1 (3) Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode c (4) (b, b2) Section B - B and C - C Scale: None Lead tip SYMBOL A A1 b b1 b2 b3 c c1 c2 D D1 E E1 e L L1 L2 MILLIMETERS MIN. 4.06 2.03 0.51 0.51 1.14 1.14 0.38 0.38 1.14 8.51 6.86 9.65 7.90 2.54 BSC 13.46 3.56 14.10 1.65 3.71 (6) INCHES MAX. 4.83 3.02 0.99 0.89 1.78 1.73 0.74 0.58 1.65 9.65 8.00 10.67 8.80 MIN. 0.160 0.080 0.020 0.020 0.045 0.045 0.015 0.015 0.045 0.335 0.270 0.380 0.311 0.100 BSC 0.530 0.140 0.555 0.065 0.146 MAX. 0.190 0.119 0.039 0.035 0.070 0.068 0.029 0.023 0.065 0.380 0.315 0.420 0.346 NOTES 4 4 4 2 3 2, 3 3 3 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline www.vishay.com 2 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com Document Number: 95014 Revision: 31-Mar-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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