8ETX06PBF_11

VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • Hyperfast recovery time • Benchmark ultralow forward voltage drop • 175 °C operating junction temperature TO-220AC Base cathode 2 TO-220 FULL-PAK • Low leakage current • Fully isolated package (VINS = 2500 VRMS) • UL E78996 pending • Compliant to RoHS Directive 2002/95/EC • Designed and qualified for industrial level 1 Cathode 3 Anode 1 Cathode 3 Anode DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recover time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS, inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. VS-8ETX06PbF VS-8ETX06FPPbF PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation TO-220AC, TO-220FP 8A 600 V 3.0 V 15 ns 175 °C Single die ABSOLUTE MAXIMUM RATINGS PARAMETER Repetitive peak reverse voltage Average rectified forward current Non-repetitive peak surge current Repetitive peak forward current Operating junction and storage temperatures SYMBOL VRRM FULL-PAK IF(AV) IFSM IFM TJ, TStg TC = 143 °C TC = 106 °C TJ = 25 °C TEST CONDITIONS VALUES 600 8 110 18 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.3 1.4 0.3 35 17 8.0 MAX. 3.0 1.7 50 500 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 94032 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V Reverse recovery time trr IF = 8 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr trr IRRM Qrr TJ = 125 °C TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 600 A/μs VR = 390 V IF = 8 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 15 16 17 40 2.3 4.5 20 100 31 12 195 MAX. 19 24 A ns UNITS Reverse recovery charge Reverse recovery time Peak recovery current Reverse recovery charge nC ns A nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case SYMBOL TJ, TStg RthJC RthJA RthCS Typical socket mount Mounting surface, flat, smooth and greased TEST CONDTIONS MIN. - 65 6.0 (5.0) Case style TO-220AC Case style TO-220 FULL-PAK TYP. 1.4 3.4 0.5 2.0 0.07 MAX. 175 2 4.3 70 12 (10) 8ETX06 8ETX06FP g oz. kgf · cm (lbf · in) °C/W UNITS °C (FULL-PAK) Thermal resistance, junction to ambient per leg Thermal resistance, case to heatsink Weight Mounting torque Marking device 100 1000 TJ = 175 °C IR - Reverse Current (µA) 100 10 1 0.1 0.01 0.001 0.0001 IF - Instantaneous Forward Current (A) TJ = 150 °C TJ = 125 °C TJ = 100 °C 10 1 TJ = 175 °C TJ = 150 °C TJ = 25 °C TJ = 25 °C 0.1 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 100 200 300 400 500 600 VF - Forward Voltage Drop (V) Fig. 1 - Typical Forward Voltage Drop Characteristics VR - Reverse Voltage (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number: 94032 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 2 VS-8ETX06PbF, VS-8ETX06FPPbF Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 1000 CT - Junction Capacitance (pF) 100 TJ = 25 °C 10 0 100 200 300 400 500 600 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 0.1 . 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics ZthJC - Thermal Impedance (°C/W) 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.001 0.01 0.1 t1 t2 Notes: 1. Duty factor D = t1/t2 . 2. Peak TJ = PDM x ZthJC + TC 1 10 . 100 0.0001 t1 - Rectangular Pulse Duration (s) Fig. 5 - Maximum Thermal Impedance ZthJC Characteristics (FULL-PAK) Document Number: 94032 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors 180 Hyperfast Rectifier, 8 A FRED Pt® 20 18 Allowable Case Temperature (°C) 170 Average Power Loss (W) 16 14 12 10 8 6 4 DC D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 RMS limit 160 DC 150 140 130 See note (1) 120 0 2 4 6 8 10 12 Square wave (D = 0.50) Rated VR applied 2 0 0 2 4 6 8 10 12 14 IF(AV) (A) Average Forward Current Fig. 6 - Maximum Allowable Case Temperature vs. Average Forward Current 180 160 140 120 100 80 60 See note (1) 40 0 2 4 6 8 10 12 10 100 Square wave (D = 0.50) Rated VR applied 40 50 IF(AV) - Average Forward Current (A) Fig. 8 - Forward Power Loss Characteristics Allowable Case Temperature (°C) IF = 16 A IF = 8 A trr (ns) DC 30 VR = 390 V TJ = 125 °C TJ = 25 °C IF = 16 A IF = 8 A 1000 20 IF(AV) - Average Forward Current (A) Fig. 7 - Maximum Allowable Case Temperature vs. Average Forward Current (FULL-PAK) 300 250 200 VR = 390 V TJ = 125 °C TJ = 25 °C dIF/dt (A/µs) Fig. 9 - Typical Reverse Recovery Time vs. dIF/dt Qrr (nC) 150 100 IF = 16 A IF = 8 A IF = 16 A 50 0 100 IF = 8 A 1000 dIF/dt (A/µs) Fig. 10 - Typical Stored Charge vs. dIF/dt Note Formula used: TC = TJ - (Pd + PdREV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 8); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 (1) For technical questions within your region, please contact one of the following: Document Number: 94032 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06FPPbF Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 11 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 12 - Reverse Recovery Waveform and Definitions Document Number: 94032 Revision: 28-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-8ETX06PbF, VS-8ETX06FPPbF Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - 8 2 E 3 T 4 X 5 06 6 FP 7 PbF 8 Vishay Semiconductors product Current rating (8 = 8 A) E = Single diode T = TO-220, DPAK X = Hyperfast rectifier Voltage rating (06 = 600 V) None = TO-220AC FP = TO-220 FULL-PAK PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions TO-220AC TO-220AC FULL-PAK TO-220AC TO-220AC FULL-PAK www.vishay.com/doc?95221 www.vishay.com/doc?95005 www.vishay.com/doc?95224 www.vishay.com/doc?95009 www.vishay.com/doc?95393 Part marking information SPICE model For technical questions within your region, please contact one of the following: Document Number: 94032 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 28-Apr-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com 6 Outline Dimensions www.vishay.com DIMENSIONS in millimeters 10.6 10.4 Hole Ø 3.4 3.1 2.8 2.6 Vishay Semiconductors 3.7 3.2 7.31 6.91 16.0 15.8 16.4 15.4 10° 3.3 3.1 13.56 13.05 2.54 TYP. 0.9 0.7 2.54 TYP. 0.61 0.38 2.85 2.65 Lead assignments Diodes 1 + 2 - Cathode 3 - Anode 1.4 1.3 1.15 TYP. 1.05 R 0.7 (2 places) R 0.5 4.8 4.6 5° ± 0.5° 5° ± 0.5° Conforms to JEDEC outline TO-220 FULL-PAK Revision: 20-Jul-11 Document Number: 95005 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay Semiconductors TO-220AC DIMENSIONS in millimeters and inches B Seating plane ØP 0.014 M B A M (6) H1 (7) Detail B D1 1 L3 L4 L 23 C E1 (6) Lead assignments Diodes 1 + 2 - Cathode 3 - Anode c e1 0.015 M B A M A2 A Conforms to JEDEC outline TO-220AC θ A A A1 H1 D2 (6) 2 x b2 Detail B 2xb E Thermal pad C C 1 2 D 3 D L1 (6) E E2 (7) Q A (6) D Lead tip View A - A SYMBOL A A1 A2 b b1 b2 b3 c c1 D D1 D2 E MILLIMETERS MIN. 4.25 1.14 2.56 0.69 0.38 1.20 1.14 0.36 0.36 14.85 8.38 11.68 10.11 MAX. 4.65 1.40 2.92 1.01 0.97 1.73 1.73 0.61 0.56 15.25 9.02 12.88 10.51 INCHES MIN. 0.167 0.045 0.101 0.027 0.015 0.047 0.045 0.014 0.014 0.585 0.330 0.460 0.398 MAX. 0.183 0.055 0.115 0.040 0.038 0.068 0.068 0.024 0.022 0.600 0.355 0.507 0.414 NOTES SYMBOL E1 E2 e e1 MILLIMETERS MIN. 6.86 2.41 4.88 6.09 13.52 3.32 1.78 0.76 3.54 2.60 MAX. 8.89 0.76 2.67 5.28 6.48 14.02 3.82 2.13 1.27 3.73 3.00 INCHES MIN. 0.270 0.095 0.192 0.240 0.532 0.131 0.070 0.030 0.139 0.102 MAX. 0.350 0.030 0.105 0.208 0.255 0.552 0.150 0.084 0.050 0.147 0.118 NOTES 6 7 4 H1 L 6, 7 4 L1 L3 2 4 3 L4 ØP Q  2 6 3, 6 90° to 93° 90° to 93° Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimension: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 (7) Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed (8) Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline Document Number: 95221 Revision: 07-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1