8EWF04STRPBF

8EWF..SPbF Soft Recovery Series Vishay High Power Products Surface Mountable Fast Soft Recovery Diode, 8 A FEATURES/DESCRIPTION Base common cathode + 2 The 8EWF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. D-PAK 1 Anode - 3 - Anode This series is designed and qualified for industrial level. Compliant to RoHS directive 2002/95/EC. PRODUCT SUMMARY VF at 8 A trr VRRM < 1.2 V 55 ns 200 to 600 V APPLICATIONS • Output rectification and freewheeling diode in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met MAJOR RATINGS AND CHARACTERISTICS SYMBOL IF(AV) VRRM IFSM VF trr TJ 8 A, TJ = 25 °C 1 A, 100 A/µs Range CHARACTERISTICS Sinusoidal waveform VALUES 8 200 to 600 170 1.2 55 - 40 to 150 UNITS A V A V ns °C VOLTAGE RATINGS PART NUMBER 8EWF02SPbF 8EWF04SPbF 8EWF06SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 200 400 600 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 300 500 700 3 IRRM AT 150 °C mA ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2t I2√t TEST CONDITIONS TC = 96 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 ms to 10 ms, no voltage reapplied VALUES 8 170 200 140 200 2000 A2s A2√s A UNITS Document Number: 94108 Revision: 01-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 1 8EWF..SPbF Soft Recovery Series Vishay High Power Products Surface Mountable Fast Soft Recovery Diode, 8 A ELECTRICAL SPECIFICATIONS PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.2 16 1.13 0.1 VR = Rated VRRM mA 3 UNITS V mΩ V RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 8 Apk 25 A/µs TJ = 25 °C VALUES 140 2.6 0.25 0.5 UNITS ns A µC di dt Irr IFM ta trr tb Qrr t THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Soldering temperature Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) Approximate weight 0.03 Marking device Case style TO-252AA (D-PAK) 8EWF06S oz. SYMBOL TJ, TStg TS RthJC RthJA (1) For 10 seconds DC operation TEST CONDITIONS VALUES - 40 to 150 °C 240 2.5 °C/W 50 1 g UNITS Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994 www.vishay.com 2 For technical questions, contact: diodestech@vishay.com Document Number: 94108 Revision: 01-Jul-09 8EWF..SPbF Soft Recovery Series Surface Mountable Vishay High Power Products Fast Soft Recovery Diode, 8 A Maximum Allowable Case T emperature (°C) 140 130 120 110 100 90 80 70 60 0 1 2 3 30° 8EWF Series ..S R thJC (DC) = 2.5 °C/ W Maximum Average F orward Power Los (W) s 150 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 12 14 Average Forward Current (A) 8E WF..SS eries TJ = 150°C DC 180° 120° 90° 60° 30° Conduction Angle RMSLimit Conduction Period 60° 90° 120° 180° 4 5 6 7 8 9 Average Forward Current (A) Fig. 1 - Current Rating Characteristics Fig. 4 - Forward Power Loss Characteristics Maximum Allowable Case T emperature (°C) Peak Half S Wave F ine orward Current (A) 150 140 130 120 110 100 90 80 70 0 2 4 6 8 10 12 14 Average Forward Current (A) Conduction Period 200 175 150 125 100 75 50 1 8EWF..S S eries R thJC (DC) = 2.5 °C/ W At Any Ra ted Load Condition And With Rated V RRM Ap plied Following S urge . Initial T = 150°C J @60 Hz 0.0083 s @50 Hz 0.0100 s 30° 60° 90° 120° 180° 8E WF..SS eries DC 10 100 Numb er Of Eq ua l Amp litude Ha lf Cyc le Current Pulses (N) Fig. 2 - Current Rating Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Maximum Average Forward Power Loss (W) Peak Half S Wave F ine orward Current (A) 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 9 Average Forward Current (A) Conduction Angle 200 180 160 140 120 100 80 60 180° 120° 90° 60° 30° RMS Limit Maximum Non Repetitive S urge Current Versus Pulse T in Duration. ra Initial T = 150°C J No Voltage Reap plied Rated VRRM Reapplied 8E WF..SS eries T J= 150°C 8E WF..S S eries 40 0.01 0.1 Pulse T in Duration (s) ra 1 Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Document Number: 94108 Revision: 01-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 3 8EWF..SPbF Soft Recovery Series Vishay High Power Products Surface Mountable Fast Soft Recovery Diode, 8 A Maximum Reverse R ecovery Charge - Qrr (µC) 1.4 1.2 1 10 A 100 Ins tantaneous F orward Current (A) 8EWF..S S eries TJ = 25 °C I FM = 20 A 0.8 8A 10 T J 25°C = TJ= 150°C 0.6 0.4 0.2 0 0 40 80 120 160 5A 2A 1A 8E ..SS WF eries 1 0.5 1 1.5 2 2.5 3 200 Instantaneous Forward Voltage (V) Rate Of Fall Of F orward Current - dI/ dt (A/ µs ) Fig. 7 - Forward Voltage Drop Characteristics Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C Maximum R everse Recovery Charge - Qrr (µC) Maximum R everse R ecovery T ime - T (µs) rr 0.4 8EWF..SS eries TJ = 25 °C 0.3 I FM = 20 A 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 40 80 120 160 200 Rate Of Fall Of F orward Current - dI/ dt (A/ µs) 2A 1A 5A 8EWF..SS eries TJ = 150 °C I FM = 20 A 10 A 8A 0.2 10 A 8A 5A 0.1 2A 1A 0 0 40 80 120 160 200 R ate Of F Of Forward Current - dI/ dt (A/ µs all ) Fig. 8 - Recovery Time Characteristics, TJ = 25 °C Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C Maximum R everse R ecovery Current - Irr (A) Maximum R verse Recovery T e ime - T (µs) rr 0.4 8E WF..S S eries TJ = 150 °C 0.3 I FM = 20 A 16 14 12 8A 8EWF..SS eries TJ = 25 °C I FM = 20 A 10 A 10 5A 0.2 10 A 8A 5A 8 2A 6 4 2 0 0 40 80 120 160 200 Rate Of F Of F all orward Current - dI/ dt (A/ µs) 1A 0.1 2A 1A 0 0 40 80 120 160 200 R ate Of Fall Of Forward Current - dI/ dt (A/ µs) Fig. 9 - Recovery Time Characteristics, TJ = 150 °C Fig. 12 - Recovery Current Characteristics, TJ = 25 °C www.vishay.com 4 For technical questions, contact: diodestech@vishay.com Document Number: 94108 Revision: 01-Jul-09 8EWF..SPbF Soft Recovery Series Surface Mountable Vishay High Power Products Fast Soft Recovery Diode, 8 A Maximum Reverse R ecovery Current - Irr (A) 20 18 16 14 12 10 8 6 4 2 0 0 40 80 120 160 200 R ate Of Fall Of F orward Current - dI/ dt (A/ µs) 8EWF..SS eries TJ = 150 °C I FM = 20 A 10 A 8A 5A 2A 1A Fig. 13 - Recovery Current Characteristics, TJ = 150 °C T ransient Thermal Impedance Z thJC (°C/ W) 10 S teady S tate Value (DC Operation) 1 D= D= D= D= D= 0.50 0.33 0.25 0.17 0.08 S ingle Pulse 8EWF S ..S eries 0.1 0.0001 0.001 0.01 0.1 S quare Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics Document Number: 94108 Revision: 01-Jul-09 For technical questions, contact: diodestech@vishay.com www.vishay.com 5 8EWF..SPbF Soft Recovery Series Vishay High Power Products ORDERING INFORMATION TABLE Surface Mountable Fast Soft Recovery Diode, 8 A Device code 8 1 1 2 3 4 5 6 7 - E 2 W 3 F 4 06 5 S 6 TR 7 PbF 8 Current rating (8 = 8 A) Circuit configuration: E = Single diode Package: W = D-PAK Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM S = Surface mountable TR = Tape and reel TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 02 = 200 V 04 = 400 V 06 = 600 V 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information www.vishay.com/doc?95016 www.vishay.com/doc?95059 www.vishay.com/doc?95033 www.vishay.com 6 For technical questions, contact: diodestech@vishay.com Document Number: 94108 Revision: 01-Jul-09 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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