8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast Soft Recovery Diode, 8 A
FEATURES/DESCRIPTION
Base common cathode + 2
The 8EWF..SPbF fast soft recovery rectifier series has been optimized for combined short reverse recovery time, low forward voltage drop and low leakage current.
Available
RoHS*
COMPLIANT
The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions.
D-PAK
1 Anode 3 - Anode
This series is designed and qualified for industrial level and lead (Pb)-free.
PRODUCT SUMMARY
VF at 8 A trr VRRM < 1.3 V 80 ns 1000/1200 V
APPLICATIONS
• Output rectification and freewheeling diode in inverters, choppers and converters • Input rectifications where severe restrictions on conducted EMI should be met
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL IF(AV) VRRM IFSM VF trr TJ 8 A, TJ = 25 °C 1 A, 100 A/µs Range CHARACTERISTICS Sinusoidal waveform VALUES 8 1000/1200 170 1.3 80 - 40 to 150 UNITS A V A V ns °C
VOLTAGE RATINGS
PART NUMBER 8EWF10SPbF 8EWF12SPbF VRRM, MAXIMUM PEAK REVERSE VOLTAGE V 1000 1200 VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 1100 1300 IRRM AT 150 °C mA 4
ABSOLUTE MAXIMUM RATINGS
PARAMETER Maximum average forward current Maximum peak one cycle non-repetitive surge current Maximum I2t for fusing Maximum I2√t for fusing SYMBOL IF(AV) IFSM I2 t I2 √ t TEST CONDITIONS TC = 94 °C, 180° conduction half sine wave 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied 10 ms sine pulse, no voltage reapplied t = 0.1 to 10 ms, no voltage reapplied VALUES 8 170 200 144 200 2000 A2s A2√s A UNITS
* Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94109 Revision: 08-Jul-08 For technical questions, contact: diodes-tech@vishay.com www.vishay.com 1
8EWF..SPbF Soft Recovery Series
Vishay High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER Maximum forward voltage drop Forward slope resistance Threshold voltage Maximum reverse leakage current SYMBOL VFM rt VF(TO) IRM TEST CONDITIONS 8 A, TJ = 25 °C TJ = 150 °C TJ = 25 °C TJ = 150 °C VALUES 1.3 25.6 0.93 VR = Rated VRRM 0.1 4 UNITS V mΩ V mA
Surface Mountable Fast Soft Recovery Diode, 8 A
RECOVERY CHARACTERISTICS
PARAMETER Reverse recovery time Reverse recovery current Reverse recovery charge Snap factor SYMBOL trr Irr Qrr S TEST CONDITIONS IF at 8 Apk 25 A/µs TJ = 25 °C VALUES 270 4.2 1 0.6 UNITS ns A µC
di dt Irr IFM ta trr tb Qrr t
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER Maximum junction and storage temperature range Maximum thermal resistance, junction to case Typical thermal resistance, junction to ambient (PCB mount) Soldering temperature Approximate weight Marking device Case style D-PAK (TO-252AA) SYMBOL TJ, TStg RthJC RthJA (1) TS For 10 seconds DC operation TEST CONDITIONS VALUES - 40 to 150 2.5 °C/W 50 240 1 0.03 8EWF12S °C g oz. UNITS °C
Note (1) When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W For recommended footprint and soldering techniques refer to application note #AN-994
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109 Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
Surface Mountable Vishay High Power Products Fast Soft Recovery Diode, 8 A
150 18 8EWF.. S Series RthJC (DC) = 2.5 °C/W
130 120 110 100 90 80 60° 70 90° 60 0 1 2 3 4 5 6 7 8 9 180° 120° 30°
Ø
Maximum Average Forward Power Loss (W)
Maximum Allowable Case Temperature (°C)
140
16 14 12 10 8 6 4 2 0 0
Conduction angle
DC 180° 120° 90° 60° 30° RMS limit
Ø
Conduction period 8EWF..S Series TJ = 150 °C
2 4 6 8 10 12 14
Average Forward Current (A)
Fig. 1 - Current Rating Characteristics
Average Forward Current (A)
Fig. 4 - Forward Power Loss Characteristics
150
180 8EWF..S Series RthJC (DC) = 2.5 °C/W 170 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 150 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s
Maximum Allowable Case Temperature (°C)
140 130 120 110 100 90 30° 80 70 60 0 2 4 6 60° 90°
Peak Half Sine Wave Forward Current (A)
160 150 140 130 120 110 100 90 8EWF..S Series 1 10
Ø
Conduction period
120° 180° 8 10
DC 12 14
80 100
Average Forward Current (A)
Fig. 2 - Current Rating Characteristics
Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 5 - Maximum Non-Repetitive Surge Current
12
Maximum Average Forward Power Loss (W)
10 8 6 4 2 0 0 1
Peak Half Sine Wave Forward Current (A)
180° 120° 90° 60° 30°
200 190 180 170 160 150 140 130 120 110 100 90 9 80 0.01 8EWF..S Series 0.1 1 RMS limit Maximum non-repetitive surge current versus pulse train duration. Initial TJ = 150 °C No voltage reapplied Rated VRRM reapplied
Ø
Conduction angle 8EWF..S Series TJ = 150 °C 2 3 4 5 6 7 8
Average Forward Current (A)
Fig. 3 - Forward Power Loss Characteristics
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94109 Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
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8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Instantaneous Forward Current (A)
1000
Surface Mountable Fast Soft Recovery Diode, 8 A
2.0 8EWF..S Series TJ = 25 °C IFM = 10 A
Qrr - Maximum Reverse Recovery Charge (µC)
TJ = 25 °C TJ = 150 °C 100
1.6 IFM = 8 A 1.2 IFM = 5 A 0.8 IFM = 2 A 0.4 IFM = 1 A
10
8EWF..S Series 1 0.5 0 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 40 80 120 160 200
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 10 - Recovery Charge Characteristics, TJ = 25 °C
0.6 0.5 0.4 0.3 0.2 0.1 0 0 40 80 120 160 200 8EWF..S Series TJ = 25 °C IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A
5 8EWF..S Series TJ = 150 °C IFM = 10 A
Qrr - Maximum Reverse Recovery Charge (µC)
trr - Maximum Reverse Recovery Time (µs)
4
3
IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A
2
1
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 8 - Recovery Time Characteristics, TJ = 25 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 11 - Recovery Charge Characteristics, TJ = 150 °C
0.8 8EWF..S Series TJ = 150 °C 0.6
20 8EWF..S Series TJ = 25 °C IFM = 10 A IFM = 8 A 12 IFM = 5 A 8 IFM = 2 A IFM = 1 A 4
trr - Maximum Reverse Recovery Time (µs)
0.4
0.2
0 0 40 80 120 160 200
Irr - Maximum Reverse Recovery Current (A)
IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A
16
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 9 - Recovery Time Characteristics, TJ = 150 °C
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 12 - Recovery Current Characteristics, TJ = 25 °C
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109 Revision: 08-Jul-08
8EWF..SPbF Soft Recovery Series
Surface Mountable Vishay High Power Products Fast Soft Recovery Diode, 8 A
25 8EWF..S Series TJ = 150 °C IFM = 10 A IFM = 8 A IFM = 5 A IFM = 2 A IFM = 1 A
Irr - Maximum Reverse Recovery Current (A)
20
15
10
5
0 0 40 80 120 160 200
dI/dt - Rate of Fall of Forward Current (A/µs)
Fig. 13 - Recovery Current Characteristics, TJ = 150 °C
ZthJC - Transient Thermal Impedance (°C/W)
10 Steady state value (DC operation)
1
Single pulse
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 8EWF..S Series
0.1 0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s) Fig. 14 - Thermal Impedance ZthJC Characteristics
Document Number: 94109 Revision: 08-Jul-08
For technical questions, contact: diodes-tech@vishay.com
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8EWF..SPbF Soft Recovery Series
Vishay High Power Products
Surface Mountable Fast Soft Recovery Diode, 8 A
ORDERING INFORMATION TABLE
Device code
8
1 1 2 3 4 5 6 7 -
E
2
W
3
F
4
12
5
S
6
TR
7
PbF
8
Current rating (8 = 8 A) Circuit configuration: E = Single diode
-
Package: W = D-PAK Type of silicon: F = Fast soft recovery rectifier Voltage code x 100 = VRRM S = Surface mountable TR = Tape and reel TRR = Tape and reel (right oriented) TRL = Tape and reel (left oriented) 10 = 1000 V 12 = 1200 V
8
-
None = Standard production PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information http://www.vishay.com/doc?95016 http://www.vishay.com/doc?95059 http://www.vishay.com/doc?95033
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For technical questions, contact: diodes-tech@vishay.com
Document Number: 94109 Revision: 08-Jul-08
Outline Dimensions
Vishay High Power Products
D-PAK (TO-252AA)
DIMENSIONS in millimeters and inches
(5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74)
E1 4
0.245 MIN. (6.23)
3
2
1
(2) L5 b b2 2x e
Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L
0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18)
(L1) H (7) C Seating plane A1
SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes
(1) (2) (3) (4) (5)
MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 -
INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 -
NOTES
SYMBOL e H L L1
MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC
INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC
NOTES
2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35°
0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3
3
L2 L3 L4
5 3 5 3
L5 Ø Ø1 Ø2
Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA
(6) (7) (8)
Document Number: 95016 Revision: 04-Nov-08
For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com
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Document Number: 91000 Revision: 11-Mar-11
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