8EWH06FN-M3

New Product VS-8EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES 2, 4 • Hyperfast recovery time, reduced Qrr and soft recovery • 175 °C maximum operating junction temperature • For PFC CRM/CCM operation • Low forward voltage drop • Low leakage current • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC • Halogen-free according to IEC 61249-2-21 definition D-PAK (TO-252AA) 1 N/C 3 Anode PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation D-PAK (TO-252AA) 8A 600 V 2.4 V 18 ns 175 °C Single die DESCRIPTION/APPLICATIONS State of the art hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, hyperfast recovery time, and soft recovery. The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in PFC boost stage in the AC/DC section of SMPS inverters or as freewheeling diodes. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg TC = 143 °C TJ = 25 °C TC = 143 °C, f = 20 kHz, d = 50 % TEST CONDITIONS VALUES 600 8 90 16 - 65 to 175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 μA IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 600 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 600 TYP. 2.0 1.3 8 8 MAX. 2.4 1.8 50 500 μA pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Document Number: 93238 Revision: 05-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-8EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V Reverse recovery time trr IF = 1 A, dIF/dt = 100 A/μs, VR = 30 V TJ = 25 °C TJ = 125 °C Peak recovery current IRRM Qrr TJ = 25 °C TJ = 125 °C TJ = 25 °C TJ = 125 °C IF = 8 A dIF/dt = 200 A/μs VR = 390 V MIN. TYP. 21 18 25 34 3.3 4.8 39 90 22 A ns MAX. UNITS Reverse recovery charge nC THERMAL - MECHANICAL SPECIFICATIONS PARAMETER Maximum junction and storage temperature range Thermal resistance, junction to case per leg Approximate weight Marking device Case style D-PAK (TO-252AA) SYMBOL TJ, TStg RthJC TEST CONDITIONS MIN. - 65 TYP. 1.8 0.3 0.01 8EWH06FN MAX. 175 2.2 UNITS °C °C/W g oz. www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 93238 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 05-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-8EWH06FN-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors 100 Reverse Current - I R (μA) 1000 100 10 1 0.1 0.01 Tj = 175°C Tj = 150°C Tj = 125°C Tj = 100°C Tj = 75°C Tj = 50°C Tj = 25°C Tj = 175°C Instantaneous Forward Current - I F (A) 10 0.001 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 100 1 Tj = 125°C Junction Capacitance - C T (pF) 10 Tj = 25°C 0.1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forward Voltage Drop - VF (V) Fig. 1 - Typical Forward Voltage Drop Characteristics 1 0 100 200 300 400 500 600 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 Thermal Impedance Z thJC (°C/W) D = 0.5 1 D = 02 D = 0.1 D = 0.05 0.1 D = 0.02 D = 0.01 Single Pulse (Thermal Resistance) 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 t1, Rectangular Pulse Duration (Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93238 Revision: 05-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-8EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® 50 45 40 35 8A, Tj = 125°C 180 Allowable Case Temperature (°C) 170 160 150 140 130 120 110 0 2 4 6 8 10 12 14 Average Forward Current - IF(AV) (A) Square wave (D=0.50) rated Vr applied DC trr ( nC ) 30 25 20 8A, Tj = 25°C see note (1) 15 10 100 1000 di F /dt (A/μs ) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt 350 20 300 RMS Limit Average Power Loss ( Watts ) 18 16 14 250 10 8 6 4 2 0 0 2 4 6 8 DC D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 Qrr ( nC ) 12 200 8A, Tj = 125°C 150 100 8A, Tj = 25°C 50 10 12 0 100 1000 Average Forward Current - IF(AV)(A) di F /dt (A/μs ) Fig. 6 - Forward Power Loss Characteristics Fig. 8 - Typical Stored Charge vs. dIF/dt Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 93238 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 05-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-8EWH06FN-M3 Hyperfast Rectifier, 8 A FRED Pt® Vishay Semiconductors VR = 200 V 0.01 Ω L = 70 μH D.U.T. dIF/dt adjust D G IRFP250 S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) IF 0 trr ta tb Qrr (2) (4) IRRM 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Document Number: 93238 Revision: 05-Apr-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 5 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product VS-8EWH06FN-M3 Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® ORDERING INFORMATION TABLE Device code VS1 1 2 3 4 5 6 7 8 - 8 2 E 3 W 4 H 5 06 6 FN 7 TRL -M3 8 9 Vishay Semiconductors product Current rating (8 = 8 A) Circuit configuration: E = Single diode Package identifier: W = D-PAK H = Hyperfast recovery Voltage rating (06 = 600 V) FN = TO-252AA None = Tube TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 9 - Environmental digit: -M3 = Halogen-free, RoHS compliant and terminations lead (Pb)-free ORDERING INFORMATION (Example) PREFERRED P/N VS-8EWH06FN-M3 VS-8EWH06FNTR-M3 VS-8EWH06FNTRL-M3 VS-8EWH06FNTRR-M3 QUANTITY PER T/R 75 2000 3000 3000 MINIMUM ORDER QUANTITY 3000 2000 3000 3000 PACKAGING DESCRIPTION Antistatic plastic tube 13" diameter reel 13" diameter reel 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions Part marking information Packaging information SPICE model www.vishay.com/doc?95016 www.vishay.com/doc?95176 www.vishay.com/doc?95033 www.vishay.com/doc?95377 www.vishay.com 6 For technical questions within your region, please contact one of the following: Document Number: 93238 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 05-Apr-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) E b3 Ø2 (3) A 0.010 M C A B L3 (3) 4 B D (5) 1 2 3 L4 Ø1 Seating plane H D1 0.488 (12.40) 0.409 (10.40) A C c2 A Pad layout 0.265 MIN. (6.74) E1 4 0.245 MIN. (6.23) 3 2 1 (2) L5 b b2 2x e Detail “C” c 0.010 M C A B Detail “C” Rotated 90 °CW Scale: 20:1 Lead tip Gauge plane L2 Ø C C L 0.089 MIN. (2.28) A 0.06 MIN. (1.524) 0.093 (2.38) 0.085 (2.18) (L1) H (7) C Seating plane A1 SYMBOL A A1 b b2 b3 c c2 D D1 E E1 Notes (1) (2) (3) (4) (5) MILLIMETERS MIN. 2.18 0.64 0.76 4.95 0.46 0.46 5.97 5.21 6.35 4.32 MAX. 2.39 0.13 0.89 1.14 5.46 0.61 0.89 6.22 6.73 - INCHES MIN. 0.086 0.025 0.030 0.195 0.018 0.018 0.235 0.205 0.250 0.170 MAX. 0.094 0.005 0.035 0.045 0.215 0.024 0.035 0.245 0.265 - NOTES SYMBOL e H L L1 MILLIMETERS MIN. 9.40 1.40 MAX. 10.41 1.78 2.29 BSC INCHES MIN. 0.370 0.055 MAX. 0.410 0.070 0.090 BSC NOTES 2.74 BSC 0.51 BSC 0.89 1.14 0° 0° 25° 1.27 1.02 1.52 10° 15° 35° 0.108 REF. 0.020 BSC 0.035 0.045 0° 0° 25° 0.050 0.040 0.060 10° 15° 35° 2 3 3 L2 L3 L4 5 3 5 3 L5 Ø Ø1 Ø2 Dimensioning and tolerancing as per ASME Y14.5M-1994 Lead dimension uncontrolled in L5 Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body Dimension b1 and c1 applied to base metal only Datum A and B to be determined at datum plane H Outline conforms to JEDEC outline TO-252AA (6) (7) (8) Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000