8S2TH06I-M

VS-8S2TH06I-M Vishay Semiconductors Hyperfast Rectifier, 8 A FRED Pt® FEATURES • • • • • • • • Hyperfast recovery time, extremely low Qrr Isolated TO-220 2 pin High frequency PFC CCM operation 175 °C maximum operating junction temperature Low leakage current Compliant to RoHS directive 2002/95/EC Halogen-free according to IEC 61249-2-21 definition Designed and qualified for industrial level 1 2 2L TO-220 DESCRIPTION VS-8S2TH06I-M 600 V series are the state of the art tandem hyperfast recovery rectifiers: the new insulated 2 pin TO-220 package provide benchmark thermal resistance that coupled with excellent switching performance and low forward voltage drop allow this device to provide 8 A DC at 120 °C case temperature. Specially designed for CCM PFC application, these devices show incomparable performance in every current intensive hard switching application. Optimized reverse recovery stored charge enables downsizing of boosting switch and cooling system. Increased operating frequency make possible use of smaller reactive elements. Cost effective PFC application is then possible with high efficiency over wide input voltage range and loading factor. The new ceramic insulated package warranty insulation up to 2 kV and features easy mounting together with not insulated parts, with minimum effect on RthJC. PRODUCT SUMMARY Package IF(AV) VR VF at IF trr (typ.) TJ max. Diode variation 2L TO-220 Insulated 8A 600 V 3.1 V See Recovery table 175 °C Doubler ABSOLUTE MAXIMUM RATINGS FOR BOTH DIODES PARAMETER Repetitive peak reverse voltage DC forward current Non-repetitive peak surge current Operating junction and storage temperatures SYMBOL VRRM IF IFSM TJ, TStg 50 % duty cycle, rect. waveforms, TC = 120 °C TC = 25 °C TEST CONDITIONS MAX. 600 8 140 - 55 to 175 UNITS V A °C ELECTRICAL SPECIFICATIONS FOR BOTH DIODES (TJ = 25 °C unless otherwise specified) PARAMETER Breakdown voltage, blocking voltage SYMBOL VBR, VR VF IR = 100 μA IF = 8 A Forward voltage IF = 8 A, TJ = 125 °C IF = 8 A, TJ = 150 °C VR = VR rated Reverse leakage current IR CT TJ = 125 °C, VR = VR rated TJ = 150 °C, VR = VR rated Junction capacitance VR = 600 V TEST CONDITIONS MIN. 600 TYP. 2.7 2.1 1.9