93MT100KS90PBF

5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A FEATURES • Package fully compatible with the industry standard INT-A-PAK power modules series • High thermal conductivity package, electrically insulated case • Excellent power volume ratio • 4000 VRMS isolating voltage • UL E78996 approved MTK • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IO 55 A to 110 A DESCRIPTION A range of extremely compact, encapsulated three phase controlled bridge rectifiers offering efficient and reliable operation. They are intended for use in general purpose and heavy duty applications. MAJOR RATINGS AND CHARACTERISTICS SYMBOL IO CHARACTERISTICS 5.MT...K 55 TC 50 Hz IFSM 60 Hz 50 Hz 60 Hz I2√t VRRM TStg, TJ Range Range 85 390 410 770 700 7700 9.MT...K 90 85 950 1000 4525 4130 45 250 800 to 1600 - 40 to 125 11.MT...K 110 85 1130 A 1180 6380 5830 63 800 A2√s V °C A2s UNITS A °C I2t Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 1 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE 80 100 5.MT...K 120 140 160 80 100 9.MT...K 11.MT...K 120 140 160 VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V 800 1000 1200 1400 1600 800 1000 1200 1400 1600 VRSM, MAXIMUM VDRM, MAXIMUM REPETITIVE IRRM/IDRM, NON-REPETITIVE PEAK PEAK OFF-STATE VOLTAGE, MAXIMUM REVERSE VOLTAGE GATE OPEN CIRCUIT AT TJ = 125 °C V V mA 900 1100 1300 1500 1700 900 1100 1300 1500 1700 800 1000 1200 1400 1600 800 1000 1200 1400 1600 20 10 FORWARD CONDUCTION PARAMETER Maximum DC output current at case temperature Maximum peak, one-cycle forward, non-repetitive on state surge current SYMBOL IO TEST CONDITIONS 120° rect. conduction angle t = 10 ms ITSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2√t for fusing Low level value of threshold voltage High level value of threshold voltage Low level value on-state slope resistance High level value on-state slope resistance Maximum on-state voltage drop Maximum non-repetitve rate of rise of turned on current Maximum holding current Maximum latching current I2√t VT(TO)1 VT(TO)2 rt1 rt2 VTM No voltage reapplied 100 % VRRM reapplied Initial TJ = TJ maximum No voltage reapplied 100 % VRRM reapplied 5.MT...K 55 85 390 410 330 345 770 700 540 500 7700 1.17 1.45 12.40 11.04 2.68 9.MT...K 90 85 950 1000 800 840 4525 4130 3200 2920 45 250 1.09 1.27 4.10 3.59 1.65 11.MT...K UNITS 110 85 1130 1180 950 1000 6380 5830 4510 4120 63 800 1.04 V (I > π x IT(AV)), TJ maximum (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum (I > π x IT(AV)), TJ maximum Ipk = 150 A, TJ = 25 °C, tp = 400 μs single junction TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 μs, tp > 6 μs TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit TJ = 25 °C, anode supply = 6 V, resistive load 1.27 3.93 mΩ 3.37 1.57 V A2√s A2s A A °C t = 0.1 ms to 10 ms, no voltage reapplied (16.7 % x π x IT(AV) < I < π x IT(AV)), TJ maximum dI/dt 150 A/μs IH IL 200 400 mA www.vishay.com 2 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A BLOCKING PARAMETER RMS isolation voltage Maximum critical rate of rise of off-state voltage SYMBOL VISOL dV/dt (1) TEST CONDITIONS TJ = 25 °C all terminal shorted, f = 50 Hz, t = 1 s TJ = TJ maximum, linear to 0.67 VDRM, gate open circuit 5.MT...K 9.MT...K 4000 500 11.MT...K UNITS V V/μs Note (1) Available with dV/dt = 1000 V/μs, to complete code add S90 i. e. 113MT160KBS90 TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger SYMBOL PGM PG(AV) IGM - VGT TJ = - 40 °C VGT TJ = 25 °C TJ = 125 °C TJ = - 40 °C Maximum required DC gate current to trigger Maximum gate voltage that will not trigger Maximum gate current that will not trigger IGT TJ = 25 °C TJ = 125 °C VGD TJ = TJ maximum, rated VDRM applied IGD 6 mA Anode supply = 6 V, resistive load TJ = TJ maximum TEST CONDITIONS 5.MT...K 9.MT...K 10 2.5 2.5 10 4.0 2.5 1.7 270 150 80 0.25 V mA V 11.MT...K UNITS W A THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Maximum junction operating and storage temperature range SYMBOL TJ, TStg DC operation per module Maximum thermal resistance, junction to case RthJC DC operation per junction 120 °C rect. conduction angle per module 120 °C rect. conduction angle per junction Maximum thermal resistance, case to heatsink per module Mounting torque ± 10 % to heatsink to terminal RthCS Mounting surface smooth, flat and grased A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Lubricated threads. 0.18 1.07 0.19 1.17 TEST CONDITIONS 5.MT...K 9.MT...K - 40 to 125 0.14 0.86 0.15 0.91 0.03 4 to 6 3 to 4 225 Nm g 0.12 0.70 0.12 0.74 K/W 11.MT...K UNITS °C Approximate weight Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 3 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ΔR CONDUCTION PER JUNCTION DEVICES 180° 5.MT...K 9.MT...K 11.MT...K 0.072 0.033 0.027 SINUSOIDAL CONDUCTION AT TJ MAXIMUM 120° 0.085 0.039 0.033 90° 0.108 0.051 0.042 60° 0.152 0.069 0.057 30° 0.233 0.099 0.081 180° 0.055 0.027 0.023 RECTANGULAR CONDUCTION AT TJ MAXIMUM 120° 0.091 0.044 0.037 90° 0.117 0.055 0.046 60° 0.157 0.071 0.059 30° 0.236 0.100 0.082 K/W UNITS Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC 5.MT..K Series Instantaneous On-State Current (A) 130 1000 TJ = 25 °C TJ = 125 °C Maximum Allowable Case Temperature (°C) 120 100 110 120° (Rect.) 100 + 90 ~ 80 0 10 20 30 40 50 60 10 5.MT..K Series Per junction 1 0 1 2 3 4 5 6 7 94353_01 Total Output Current (A) Fig. 1 - Current Ratings Characteristic 94353_02 Instantaneous On-State Voltage (V) Fig. 2 - Forward Voltage Drop Characteristics 220 200 180 160 140 120 100 80 60 40 20 0 0 94353_03a 220 Maximum Total Power Loss (W) Maximum Total Power Loss (W) 5.MT..K Series TJ = 125 °C 200 180 160 140 120 100 80 60 40 20 0 0 1.0 0. R thS 0.1 3 0.5 0.7 0. 4 K/ 2K K/ K/ W K/ W A 0. 2 K/W .05 =0 /W W K/ W 120° (Rect.) W R -Δ K/W 1.5 K /W 5 10 15 20 25 30 35 40 45 50 55 25 50 75 100 125 Total Output Current (A) 94353_03b Maximum Allowable Ambient Temperature (°C) Fig. 3 - Total Power Loss Characteristics www.vishay.com 4 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A 350 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 9.MT..K Series Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-State Current (A) 120 120° (Rect.) 300 110 250 100 + 90 ~ 80 200 5.MT..K Series Per junction 150 1 10 100 0 94353_06 20 40 60 80 100 94353_04 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 4 - Maximum Non-Repetitive Surge Current Total Output Current (A) Fig. 6 - Current Ratings Characteristic Peak Half Sine Wave On-State Current (A) 350 300 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied Instantaneous On-State Current (A) 400 1000 100 250 TJ = 25 °C 10 TJ = 125 °C 9.MT..K Series Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 200 5.MT..K Series Per junction 150 0.01 0.1 1 94353_05 Pulse Train Duration (s) Fig. 5 - Maximum Non-Repetitive Surge Current 94353_07 Total Output Current Fig. 7 - Forward Voltage Drop Characteristics 300 300 9.MT..K Series TJ = 125 °C Maximum Total Power Loss (W) Maximum Total Power Loss (W) 250 200 150 100 50 0 0 250 200 150 100 50 0 1.0 0.4 0.5 0. 0. 12 K/ R thS 2 0. W K/ 3 W A =0 K/ W .05 K/ W K/ W 120° (Rect.) K/W R -Δ 0.7 K/W K/W /W 1.5 K 10 20 30 40 50 60 70 80 90 94353_08b 0 25 50 75 100 125 94353_08a Total Output Current (A) Maximum Allowable Ambient Temperature (°C) Fig. 8 - Total Power Loss Characteristics Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 5 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A 850 800 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 130 11.MT..K Series Maximum Allowable Case Temperature (°C) Peak Half Sine Wave On-State Current (A) 750 700 650 600 550 500 450 400 1 120 120° (Rect.) 110 100 + 90 ~ 80 9.MT..K Series Per junction 10 100 0 94353_11 20 40 60 80 100 120 94353_09 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 9 - Maximum Non-Repetitive Surge Current Total Output Current (A) Fig. 11 - Current Ratings Characteristic 900 Peak Half Sine Wave On-State Current (A) 800 700 600 500 400 300 0.01 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied Instantaneous On-State Current (A) 1000 1000 100 TJ = 25 °C 10 TJ = 125 °C 9.MT..K Series Per junction 0.1 1 11.MT..K Series Per junction 1 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 94353_10 Pulse Train Duration (s) Fig. 10 - Maximum Non-Repetitive Surge Current 94353_12 Instantaneous On-State Voltage (V) Fig. 12 - Forward Voltage Drop Characteristics 350 350 Maximum Total Power Loss (W) 300 250 200 150 100 50 0 0 Maximum Allowable Ambient Temperature (°C) 11.MT..K Series TJ = 125 °C R thS 300 0. 12 0. 2 A =0 8K .05 W K/ 250 200 150 100 50 0 0.3 0.4 K/ 120° (Rect.) K/ K/ W W /W 0.5 0.7 W R -Δ K/W K/W 1.0 K /W 1.5 K /W 10 20 30 40 50 60 70 80 90 100 110 0 94353_13b 25 50 75 100 125 94353_13a Total Output Current Maximum Total Power Loss (W) Fig. 13 - Total Power Loss Characteristics www.vishay.com 6 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Three Phase Controlled Bridge Vishay High Power Products (Power Modules), 55 A to 110 A 1000 900 At any rated load condition and with rated VRRM applied following surge. Initial TJ = 125 °C at 60 Hz 0.0083 s at 50 Hz 0.0100 s 1200 1100 Maximum non-repetitive surge current versus pulse train duration. Control of conduction may not be maintained. Initial TJ = 125 °C No voltage reapplied Rated VRRM reapplied Peak Half Sine Wave On-State Current (A) Peak Half Sine Wave On-State Current (A) 1000 900 800 700 600 500 400 0.01 800 700 600 500 400 1 11.MT..K Series Per junction 10 100 11.MT..K Series Per junction 0.1 1.0 94353_14 Number of Equal Amplitude Half Cycle Current Pulses (N) Fig. 14 - Maximum Non-Repetitive Surge Current 94353_15 Pulse Train Duration (s) Fig. 15 - Maximum Non-Repetitive Surge Current 10 ZthJC - Transient Thermal Impedance (K/W) 1 Steady state value RthJC = 1.07 K/W RthJC = 0.86 K/W RthJC = 0.70 K/W (DC operation) 9.MT..K Series 5.MT..K Series 11.MT..K Series 0.1 0.01 Per junction 0.001 0.001 94353_16 0.01 0.1 1 10 Square Wave Pulse Duration (s) Fig. 16 - Thermal Impedance ZthJC Characteristics 10 Instantaneous Gate Voltage (V) 1 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 30 Ω; tr = 0.5 μs, tp ≥ 6 μs b) Recommended load line for ≤ 30 % rated dI/dt: 20 V, 65 Ω tr = 1 μs, tp ≥ 6 μs TJ = 125 °C (1) PGM = 100 W, tp = 500 μs (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms (a) (b) TJ = 25 °C TJ = -40 °C 0.1 VGD IG D 0.01 0.001 0.01 (4) (3) (2) (1) 5.MT...K, 9.MT...K, 11.MT...K Series 0.1 1 Frequency Limited by PG(AV) 10 100 1000 94353_17 Instantaneous Gate Current (A) Fig. 17 - Gate Characteristics Document Number: 94353 Revision: 13-Aug-08 For technical questions, contact: indmodules@vishay.com www.vishay.com 7 5.MT...KPbF, 9.MT...KPbF, 11.MT...KPbF Series Vishay High Power Products Three Phase Controlled Bridge (Power Modules), 55 A to 110 A ORDERING INFORMATION TABLE Device code 11 1 1 - 3 2 MT 3 160 4 K S90 PbF 5 6 Current rating code: 5 = 55 A (average) 9 = 90 A (average) 11 = 110 A (average) 2 - Circuit configuration code: 1 = Negative half-controlled bridge 2 = Positive half-controlled bridge 3 = Full-controlled bridge 3 4 5 - Essential part number Voltage code x 10 = VRRM (see Voltage Ratings table) Critical dV/dt: None = 500 V/µs (standard value) S90 = 1000 V/µs (special selection) 6 - PbF = Lead (Pb)-free Note • To order the optional hardware go to www.vishay.com/doc?95172 CIRCUIT CONFIGURATION A B 6 1 D 2 5 E Full-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) F D 4 3 1 2 5 E Positive half-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) F D E Negative half-controlled bridge (5.MT...K, 9.MT...K, 11.MT..K) F C A B C A B 6 4 3 C LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95004 www.vishay.com 8 For technical questions, contact: indmodules@vishay.com Document Number: 94353 Revision: 13-Aug-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1