AGP15-800

AGP15 Series Vishay Semiconductors formerly General Semiconductor Miniature Glass Passivated Junction Plastic Controlled Avalanche Rectifiers DO-204AC (DO-15) 1.0 (25.4) min. ® 0.034 (0.86) 0.028 (0.71) Dia. Features Reverse Voltage 400 to 800V Forward Current 1.5A ted* ten Pa Dimensions in inches and (millimeters) 0.300 (7.6) 0.230 (5.8) • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • High temp. metallurgically bonded constructed rectifiers • Controlled Avalanche characteristic combined with the ability to dissipate reverse power • Glass passivated cavity-free junction in DO-15 package • 1.5 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA • Capable of meeting environmental standards of MIL-S-19500 • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602 of 1976; 1.0 (25.4) brazed-lead assembly by min. Patent No. 3,930,306 of 1976 and glass composition by Patent No. 3,752,701 of 1973 0.140 (3.6) 0.104 (2.6) Dia. Mechanical Data Case: Molded plastic over glass Terminals: Plated axial leads, solderable per MIL-STD-202, Method 208 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0154 oz., 0.4 g Ratings at 25°C ambient temperature unless otherwise specified. Maximum Ratings & Thermal Characteristics Parameter Maximum Recurrent Peak Reverse Voltage Maximum RMS voltage Maximum DC blocking voltage Maximum Peak Power Dissipation in the Avalanch Region 20 µs Pulse Max. Average Forward Rectified Current 0.375” (9.5mm) Lead Lengths at TA = 55°C Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Maximum full load reverse current, full cycle average 0.375" (9.5mm) lead length at TA = 55°C Typical thermal resistance (Note 1) Operating and storage temperature range Symbol VRRM VRMS VDC PRM IAV IFSM IR(AV) RθJA TJ, TSTG AGP15-400 AGP15-600 AGP15-800 400 280 400 600 420 600 500 1.5 50 100 25 –65 to +175 800 560 800 Unit V V V W A A µA °C/W °C Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Minimum Avalanche Breakdown Voltage at 100µA Maximum Avalanche Breakdown Voltage at 100µA Maximum instantaneous forward voltage at 1.5A Maximum reverse current at rated DC blocking voltage Typical reverse recovery time IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz VBR VBR VF IR trr CJ 450 750 675 1000 1.1 5.0 2.0 15 880 1200 V V V µA µs pF Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C. Board mounted Document Number 88535 08-Jul-02 www.vishay.com 1 AGP15 Series Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Maximum Forward Current Derating Curve 1.5 10 Fig. 2 – Typical Instantaneous Forward Characteristics Instantaneous Forward Current (A) Average Forward Rectified Current (A) 1.25 1.0 0.75 0.5 0.25 Single Phase Half Wave 60HZ Resistive or Inductive Load 0.375” (9.5mm) Lead Length 1.0 0.1 TJ = 25°C Pulse Width = 300µs 2% Duty Cycle 0.01 .4 0 25 50 75 100 125 150 175 .6 .8 1.0 1.2 1.4 1.6 Ambient Temperature (°C) Instantaneous Forward Voltage (V) Fig. 3 – Maximum Non-Repetitive Peak Forward Surge Current Instantaneous Reverse Leakage Current (µA) 100 10 Fig. 4 – Typical Reverse Leakage Characteristics Peak Forward Surge Current (A) TJ = 125°C 1 10 TJ = 75°C 0.1 TA = 55°C 8.3ms Single Half Sine-Wave (JEDEC Method) 1 1 10 100 TJ = 25°C 0 20 40 60 80 100 0.01 Number of Cycles at 60HZ Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Maximum Non-Repetitive Reverse Avalanche Power Dissipation 1,000 Peak Reverse Avalanche Power (W) TJ = 25°C 100 10 10 100 1,000 10,000 Pulse Duration (µs) www.vishay.com 2 Document Number 88535 08-Jul-02