AS4PD

New Product AS4PD thru AS4PM www.vishay.com Vishay General Semiconductor High Current Density Standard Avalanche Surface Mount Rectifiers FEATURES eSMP Series K ® • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Glass passivated chip junction • Controlled avalanche characteristics 1 2 • Low leakage current • High forward surge capability • AEC-Q101 qualified • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM EAS VF at IF = 4 A TJ max. 4.0 A 200 V to 1000 V 100 A 20 mJ 0.92 V 175 °C MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in general purpose rectification of power supplies, inverters, converters and freewheeling diodes for consumer, automotive and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C IAS = 2.5 A max. IAS = 1.0 A typical VRRM IF IF (1) (2) SYMBOL AS4PD AS4D 200 AS4PG AS4G 400 AS4PJ AS4J 600 4.0 2.4 100 20 30 - 55 to + 175 AS4PK AS4K 800 AS4PM AS4M 1000 UNIT V A A mJ °C IFSM EAS TJ, TSTG Operating junction and storage temperature range Notes (1) Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended copper pad area Revision: 13-Jul-11 Document Number: 88770 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AS4PD thru AS4PM www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS IF = 2.0 A Instantaneous forward voltage IF = 4.0 A IF = 2.0 A IF = 4.0 A Reverse current Typical reverse recovery time Typical junction capacitance per diode Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms rated VR SYMBOL TYP. 0.962 VF (1) 1.044 0.822 0.922 IR (2) trr CJ 0.35 75 1.8 60 MAX. 1.10 0.98 10 150 μA μs pF V UNIT TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA RJM (1) (2) AS4PD AS4PG AS4PJ 80 5 AS4PK AS4PM UNIT °C/W Notes (1) Free air, mounted on recommended PCB 1 oz. pad area; thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 20 mm x 20 mm copper pad areas, 1 oz. FR4 PCB; R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N AS4PJ-M3/86A AS4PJ-M3/87A AS4PJHM3/86A (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel AS4PJHM3/87A (1) Note (1) AEC-Q101 qualified Revision: 13-Jul-11 Document Number: 88770 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AS4PD thru AS4PM www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 4.5 4.0 1000 Instantaneous Reverse Current (μA) TM = 155 °C 3.5 3.0 TA = 25 °C 2.5 2.0 1.5 1.0 0.5 0 0 25 50 75 100 125 150 175 TM Measured at the Cathode Band Terminal DC Forward Current (A) 100 TA = 175 °C TA = 125 °C 10 TA = 75 °C 1 0.1 TA = 25 °C 0.01 10 20 30 40 50 60 70 80 90 100 Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Mayimum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 5.0 4.5 D = 0.5 D = 0.3 D = 0.2 D = 0.8 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 100 Average Power Loss (W) 4.0 3.5 D = 0.1 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 D = 1.0 T Junction Capacitance (pF) 10 D = tp/T 2.0 2.5 3.0 3.5 tp 1 4.0 4.5 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 TA = 175 °C 100 10 TA = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction-to-Ambient 10 1 TA = 75 °C 1 TA = 25 °C 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Revision: 13-Jul-11 Document Number: 88770 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AS4PD thru AS4PM www.vishay.com PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) Vishay General Semiconductor 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. Revision: 13-Jul-11 Document Number: 88770 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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