AU1PD

New Product AU1PD thru AU1PM Vishay General Semiconductor Surface Mount Ultrafast Avalanche Rectifiers FEATURES eSMP ® Series • Very low profile - typical height of 1.0 mm • Ideal for automated placement • Glass passivated chip junction • Ultrafast recoveray times for high frequency • Low reverse current • Meets MSL level 1, per LF maximum peak of 260 °C J-STD-020, DO-220AA (SMP) • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 1.0 A PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr IR EAS TJ max. 200 V to 1000 V 30 A, 25 A 75 ns 1 μA 20 mJ 175 °C • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-220AA (SMP) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in secondary rectification and freewheeling for ultrafast switching speeds of AC/AC and DC/DC converters in high temperature conditions for both consumer and automotive applications. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Average forward current Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at IAS = 1.0 A, TA = 25 °C Operating junction and storage temperature range VRRM IF(AV) IFSM EAS TJ, TSTG 30 20 - 55 to + 175 SYMBOL AU1PD AUD 200 AU1PG AUG 400 AU1PJ AUJ 600 1.0 25 AU1PK AUK 800 AU1PM AUM 1000 V A A mJ °C UNIT Document Number: 89291 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU1PD thru AU1PM Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Maximum instantaneous forward voltage Maximum reverse current Maximum reverse recovery time Typical junction capacitance TEST CONDITIONS IF = 1.0 A TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) IR (2) trr CJ 11 AU1PD AU1PG 1.5 1.4 1.0 100 75 7.5 AU1PJ AU1PK AU1PM UNIT V 1.85 1.6 Rated VR μA ns pF IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A 4.0 V, 1 MHz Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms THERMAL CHARACTERISTICS (TA = 25 °c unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA (1) RJM (1) AU1PD AU1PG AU1PJ 132 15 AU1PK AU1PM UNIT °C/W (1) Note Free air, mounted on recommended copper pad area. Thermal resistance RJA - junction to ambient, RJM - junction to mount at the terminal cathode band ORDERING INFORMATION (Example) PREFERRED P/N AU1PJ-M3/84A AU1PJ-M3/85A AU1PJHM3/84A (1) AU1PJHM3/85A (1) (1) UNIT WEIGHT (g) 0.024 0.024 0.024 0.024 PREFERRED PACKAGE CODE 84A 85A 84A 85A BASE QUANTITY 3000 10 000 3000 10 000 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note Automotive grade RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1.2 1.6 Resistive or Inductive Load 1.0 AU1PD thru AU1PJ AU1PD thru AU1PJ 1.4 D = 0.5 D = 0.3 D = 0.2 D = 0.1 D = 1.0 D = 0.8 Average Forward Rectified Current (A) Average Power Loss (W) 1.2 1.0 0.8 0.6 0.8 AU1PK thru AU1PM 0.6 0.4 TM Measured at the Cathode Band Terminal T 0.4 0.2 0 0.2 D = tp/T 0 0.2 0.4 0.6 0.8 tp 1.0 1.2 0 100 110 120 130 140 150 160 170 180 TM - Mount Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum Forward Current Derating Curve www.vishay.com 2 Fig. 2 - Forward Power Loss Characteristics For technical questions within your region, please contact one of the following: Document Number: 89291 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU1PD thru AU1PM Vishay General Semiconductor 1.6 1000 Instantaneous Reverse Current (μA) AU1PK thru AU1PM 1.4 D = 0.5 D = 0.3 D = 0.8 TA = 175 °C 100 TA = 125 °C 10 TA = 75 °C 1 TA = 25 °C 0.1 AU1PD thru AU1PJ 0.01 10 20 30 40 50 60 70 80 90 100 Average Power Loss (W) 1.2 1.0 0.8 0.6 D = 0.1 D = 0.2 D = 1.0 T 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 D = tp/T tp Average Forward Current (A) Percent of Rated Peak Reverse Voltage (%) Fig. 3 - Forward Power Loss Characteristics Fig. 6 - Typical Reverse Characteristics 10 TA = 175 °C 1000 Instantaneous Reverse Current (μA) Instantaneous Forward Current (A) TA = 175 °C 100 TA = 125 °C 10 TA = 75 °C 1 TA = 125 °C 1 TA = 75 °C TA = 25 °C AU1PD thru AU1PJ 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 0.1 TA = 25 °C AU1PK thru AU1PM 0.01 10 20 30 40 50 60 70 80 90 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 4 - Typical Instantaneous Forward Characteristics Fig. 7 - Typical Reverse Characteristics 10 100 TA = 175 °C TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p Instantaneous Forward Current (A) 1 TA = 125 °C Junction Capacitance (pF) TA = 75 °C 0.1 TA = 25 °C AU1PK thru AU1PM 0.01 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 10 AU1PD thru AU1PJ AU1PK thru AU1PM 1 0.1 1 10 100 Instantaneous Forward Voltage (V) Reverse Voltage (V) Fig. 5 - Typical Instantaneous Forward Characteristics Fig. 8 - Typical Junction Capacitance Document Number: 89291 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU1PD thru AU1PM Vishay General Semiconductor 1000 Transient Thermal Impedance (°C/W) Junction to Ambient 100 10 1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 9 - Typical Transient Thermal Impedance PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-220AA (SMP) Cathode Band 0.012 (0.30) REF. 0.086 (2.18) 0.074 (1.88) 0.053 (1.35) 0.041 (1.05) 0.036 (0.91) 0.024 (0.61) 0.142 (3.61) 0.126 (3.19) 0.158 (4.00) 0.146 (3.70) 0.103 (2.60) 0.087 (2.20) 0.032 (0.80) 0.016 (0.40) 0.105 (2.67) 0.013 (0.35) 0.004 (0.10) 0.045 (1.15) 0.033 (0.85) 0.012 (0.30) 0.018 (0.45) 0.000 (0.00) 0.006 (0.15) 0.100 (2.54) 0.025 0.030 (0.635) (0.762) 0.050 (1.27) www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89291 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-May-11 This document is subject to change without notice. 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