AU3PM

New Product AU3PK, AU3PM Vishay General Semiconductor Ultrafast Avalanche Surface Mount Rectifiers eSMP ® Series K FEATURES • Very low profile - typical height of 1.1 mm • Ideal for automated placement • Glass passivated chip junction • Fast reverse recovery time 1 2 • Controlled avalanche characteristics • Low leakage current • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 3.0 A TO-277A (SMPC) K Cathode Anode 1 Anode 2 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM trr EAS VF at IF = 3.0 A TJ max. 800 V, 1000 V 45 A 75 ns 20 mJ 1.45 V 175 °C • Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-277A (SMPC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS compliant, and commercial grade Base P/NHM3 - halogen-free, RoHS compliant, and automotive grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix meets JESD 201 class 2 whisker test TYPICAL APPLICATIONS For use in lighting, fast switching rectification of power supplies, inverters, converters, and freewheeling diodes for consumer, automotive, and telecommunication. MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Device marking code Maximum repetitive peak reverse voltage Maximum DC forward current (fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Non-repetitive avalance energy at TJ = 25 °C IAS = 2.5 A max. IAS = 1.0 A typ. VRRM IF (1) IF (2) SYMBOL AU3PK AU3K 800 3.0 AU3PM AU3M 1000 UNIT V A 1.4 45 20 A IFSM EAS TJ, TSTG mJ 30 - 55 to + 175 °C Operating junction and storage temperature range Notes (1) Mounted on 20 mm x 20 mm pad areas, 1 oz. FR4 PCB (2) Free air, mounted on recommended pad area Document Number: 89339 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU3PK, AU3PM Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Instantaneous forward voltage TEST CONDITIONS IF = 3.0 A TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VF (1) TYP. 2.27 1.45 0.40 107 58 42 MAX. 2.5 V 2.0 10 μA 500 75 ns pF UNIT Reverse current Rated VR IR (2) trr CJ Maximum reverse recovery time Typical junction capacitance per diode Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width  40 ms IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A Rated VR = 4.0 V, 1 MHz THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RJA RJM (1) (2) AU3PK 85 AU3PM UNIT °C/W 5 Notes (1) Free air, mounted on recommended PCB 1 oz. pad are; thermal resistance R JA - junction to ambient (2) Units mounted on PCB with 20 mm x 20 mm copper pad areas; R JM - junction to mount ORDERING INFORMATION (Example) PREFERRED P/N AU3PM-M3/86A AU3PM-M3/87A AU3PMHM3/86A AU3PMHM3/86A (1) (1) UNIT WEIGHT (g) 0.10 0.10 0.10 0.10 PREFERRED PACKAGE CODE 86A 87A 86A 87A BASE QUANTITY 1500 6500 1500 6500 DELIVERY MODE 7" diameter plastic tape and reel 13" diameter plastic tape and reel 7" diameter plastic tape and reel 13" diameter plastic tape and reel Note (1) AEC-Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number: 89339 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU3PK, AU3PM Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 3.4 3.2 3.0 2.8 3.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 10 000 Instantaneous Reverse Current (μA) TM = 150 °C 1000 DC Forward Current (A) TA = 175 °C TA = 125 °C 100 TA = 25 °C 10 TA = 75 °C 1 TA = 25 °C 0.1 TM Measured at the Cathode Band Terminal 25 50 75 100 125 150 175 0.01 10 20 30 40 50 60 70 80 90 100 TM - Mount Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Maximum Forward Current Derating Curve Fig. 4 - Typical Reverse Leakage Characteristics 6.0 5.5 5.0 D = 0.3 D = 0.2 D = 0.1 D = 0.5 D = 0.8 1000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0.4 D = 1.0 Junction Capacitance (pF) 3.6 Average Power Loss (W) 100 T D = tp/T 0.8 1.2 1.6 2.0 2.4 2.8 tp 10 3.2 0.1 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Average Power Loss Characteristics Fig. 5 - Typical Junction Capacitance 100 100 TA = 175 °C TA = 125 °C 10 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction-to-Ambient 10 TA = 75 °C 1 TA = 25 °C 0.1 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 4.8 1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Fig. 6 - Typical Transient Thermal Impedance Document Number: 89339 Revision: 04-May-11 For technical questions within your region, please contact one of the following: www.vishay.com DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 New Product AU3PK, AU3PM Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-277A (SMPC) 0.187 (4.75) 0.175 (4.45) K 0.016 (0.40) 0.006 (0.15) 0.262 (6.65) 0.250 (6.35) 0.242 (6.15) 0.238 (6.05) 2 1 0.171 (4.35) 0.167 (4.25) 0.146 (3.70) 0.134 (3.40) 0.087 (2.20) 0.075 (1.90) 0.047 (1.20) 0.039 (1.00) Mounting Pad Layout 0.189 (4.80) MIN. 0.189 (4.80) 0.173 (4.40) 0.155 (3.94) NOM. 0.030 (0.75) NOM. 0.268 (6.80) 0.186 (4.72) MIN. 0.049 (1.24) 0.037 (0.94) 0.084 (2.13) NOM. 0.053 (1.35) 0.041 (1.05) Conform to JEDEC TO-277A 0.050 (1.27) MIN. 0.041 (1.04) 0.055 (1.40) MIN. www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number: 89339 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 04-May-11 This document is subject to change without notice. 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