AZ23C3V6-V

AZ23-V-Series Vishay Semiconductors Small Signal Zener Diodes, Dual Features • These diodes are also available in other case styles and configurations including: the dual diode common cathode configu- e3 ration with type designation DZ23, the single diode SOT23 case with the type designation BZX84C, and the single diode SOD123 case with the type designation BZT52C. • Dual Silicon Planar Zener Diodes, Common Anode • The Zener voltages are graded according to the international E 24 standard • The parameters are valid for both diodes in one case. ΔVZ and Δrzj of the two diodes in one case is ≤ 5% • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 18070 Mechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel, (8 mm tape), 10 k/box GS08 / 3 k per 7" reel, (8 mm tape), 15 k/box Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Power dissipation 1) Test condition Symbol Ptot Value 3001) Unit mW Device on fiberglass substrate, see layout on page 6 Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 4201) 150 - 65 to + 150 Unit K/W °C °C Device on fiberglass substrate, see layout on page 6 Document Number 85759 Rev. 1.5, 24-Mar-06 www.vishay.com 1 AZ23-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range1) VZ at IZT Dynamic Resistance rzj at IZT = 5 mA, f = 1 kHz Ω max 2.9 3.2 3.5 3.8 4.1 4.6 5 5.4 6 6.6 7.2 7.9 8.7 9.6 10.6 11.6 12.7 14.1 15.6 17.1 19.1 21.2 23.3 25.6 28.9 32 35 38 41 46 50 54 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 rzj at IZT = 1 mA, f = 1 kHz Test Current IZT Temperature Coefficient of Zener Voltage αVZ at IZT Reverse Voltage V R at IR = 100 nA V max -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 9.5 9.5 10 10 10 10 10 10 10 12 12 12 12 > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 V min AZ23C2V7-V AZ23C3V0-V AZ23C3V3-V AZ23C3V6-V AZ23C3V9-v AZ23C4V3-V AZ23C4V7-V AZ23C5V1-V AZ23C5V6-V AZ23C6V2-V AZ23C6V8-V AZ23C7V5-V AZ23C8V2-V AZ23C9V1-V AZ23C10-V AZ23C11-V AZ23C12-V AZ23C13-V AZ23C15-V AZ23C16-V AZ23C18-V AZ23C20-V AZ23C22-V AZ23C24-V AZ23C27-V AZ23C30-V AZ23C33-V AZ23C36-V AZ23C39-V AZ23C43-V AZ23C47-V AZ23C51-V 1) mA min -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 -3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 10-4/°C D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 D21 D22 D23 D24 D25 D26 D27 D28 D29 D30 D31 D32 2.5 2.8 3.1 3.4 3.7 4 4.4 4.8 5.2 5.8 6.4 7 7.7 8.5 9.4 10.4 11.4 12.4 13.8 15.3 16.8 18.8 20.8 22.8 25.1 28 31 34 37 40 44 48 Tested with pulses tp = 5 ms www.vishay.com 2 Document Number 85759 Rev. 1.5, 24-Mar-06 AZ23-V-Series Vishay Semiconductors Electrical Characteristics Partnumber Marking Code Zener Voltage Range1) VZ at IZT Dynamic Resistance rzj at IZT = 5 mA, f = 1 kHz Ω max 2.75 3.06 3.37 3.67 3.98 4.39 4.79 5.2 5.71 6.32 6.94 7.65 8.36 9.28 10.2 11.2 12.2 13.3 15.3 16.3 18.4 20.4 22.4 24.5 27.5 30.6 33.7 36.7 39.8 43.9 47.9 52 75 (< 83) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 80 (< 95) 70 (< 78) 30 (< 60) 10 (< 40) 4.8 (< 10) 4.5 (< 8) 4 (< 7) 4.5 (< 7) 4.8 (< 10) 5.2 (< 15) 6 (< 20) 7 (< 20) 9 (< 25) 11 (< 30) 13 (< 40) 18 (< 50) 20 (< 50) 25 (< 55) 28 (< 80) 30 (< 80) 35 (< 80) 40 (< 80) 40 (< 90) 50 (< 90) 60 (< 100) 70 (< 100) 70 (< 100) < 500 < 500 < 500 < 500 < 500 < 500 < 500 < 480 < 400 < 200 < 150 < 50 < 50 < 50 < 70 < 70 < 90 < 110 < 110 < 170 < 170 < 220 < 220 < 220 < 250 < 250 < 250 < 250 < 300 < 700 < 750 < 750 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 5 rzj at IZT = 1 mA, f = 1 kHz Test Current IZT Temperature Coefficient of Zener Voltage αVZ at IZT Reverse Voltage V R at IR = 100 nA V max -4 -3 -3 -3 -3 -1 2 4 6 7 7 7 7 8 8 9 9 9 9 0.5 0.5 10 10 10 10 10 10 10 12 12 12 12 > 0.8 >1 >2 >3 >5 >6 >7 > 7.5 > 8.5 >9 > 10 > 11 > 12 > 14 > 15 > 17 > 18 > 20 > 22.5 > 25 > 27 > 29 > 32 > 35 > 38 V min AZ23B2V7-V AZ23B3V0-V AZ23B3V3-V AZ23B3V6-V AZ23B3V9-V AZ23B4V3-V AZ23B4V7-V AZ23B5V1-V AZ23B5V6-V AZ23B6V2-V AZ23B6V8-V AZ23B7V5-V AZ23B8V2-V AZ23B9V1-V AZ23B10-V AZ23B11-V AZ23B12-V AZ23B13-V AZ23B15-V AZ23B16-V AZ23B18-V AZ23B20-V AZ23B22-V AZ23B24-V AZ23B27-V AZ23B30-V AZ23B33-V AZ23B36-V AZ23B39-V AZ23B43-V AZ23B47-V AZ23B51-V 1) mA min -9 -9 -8 -8 -7 -6 -5 -3 -2 -1 2 -3 4 5 5 5 6 7 7 8 8 8 8 8 8 8 8 8 10 10 10 10 10-4/°C D1 D2 D3 D4 D5 D6 D7 D8 D9 D10 D11 D12 D13 D14 D15 D16 D17 D18 D19 D20 D21 D22 D23 D24 D25 D26 D27 D28 D29 D30 D31 D32 2.65 2.94 3.23 3.53 3.82 4.21 4.61 5 5.49 6.08 6.66 7.35 8.04 8.92 9.8 10.8 11.8 12.7 14.7 15.7 17.6 19.6 21.6 23.5 26.5 29.4 32.3 35.3 38.2 42.1 46.1 50 Tested with pulses tp = 5 ms Document Number 85759 Rev. 1.5, 24-Mar-06 www.vishay.com 3 AZ23-V-Series Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified mA 103 102 Ω 103 5 4 3 2 rzth = RthA x VZ x Δ VZ ΔTj IF 10 1 10-1 10-2 TJ = 100 °C rzth 102 5 4 3 2 TJ = 25 °C 10 10-3 10-4 10-5 0 18114 5 4 3 2 negative positive 1 0.2 0.4 0.6 0.8 1V 1 18121 2 3 45 10 2 345 100 V VF Figure 1. Forward characteristics VZ at IZ = 5 mA Figure 4. Thermal Differential Resistance vs. Zener Voltage mW 500 Ω 100 7 5 4 400 Ptot 300 rzj 3 2 10 200 7 5 4 3 100 2 0 0 18115 1 100 200 °C 1 18122 2 3 45 Tj = 25 °C IZ = 5 mA 10 2 345 100 V Tamb VZ Figure 2. Admissible Power Dissipation vs. Ambient Temperature Figure 5. Dynamic Resistance vs. Zener Voltage Ω 103 7 5 4 Tj = 25 °C mV/°C 25 20 IZ = rzj 3 2 47 + 51 43 39 36 Δ VZ ΔTj 15 10 5 0 -5 5 mA 1 mA 20 mA 102 7 5 4 3 2 10 0.1 18120 2 3 45 1 2 345 10 mA 1 18123 2 3 45 10 2 345 100 V IZ VZ Figure 3. Dynamic Resistance vs. Zener Current Figure 6. Temperature Dependence of Zener Voltage vs. Zener Voltage www.vishay.com 4 Document Number 85759 Rev. 1.5, 24-Mar-06 AZ23-V-Series Vishay Semiconductors V 0.8 0.7 0.6 VZ at IZ = 5 mA 25 15 10 V 1.6 1.4 1.2 ΔVZ = rzth x IZ Δ VZ 0.5 0.4 0.3 0.2 0.1 0 -1 - 0.2 0 18124 3.6 4.7 8 7 6.2 5.9 5.6 5.1 Δ VZ 1 0.8 0.6 0.4 0.2 0 - 0.2 - 0.4 20 40 60 80 100 120 140 C 18127 1 2 3 45 10 2 345 100 V Tj VZ at IZ = 5 mA Figure 10. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage V 5 Figure 7. Change of Zener Voltage vs. Junction Temperature mV/°C 100 IZ = 5 mA ΔVZ = rzth x IZ Δ VZ ΔTj 80 4 Δ VZ 60 3 IZ = 5 mA 40 2 20 1 IZ = 2 mA 0 0 18125 0 20 40 60 80 100 V 0 18128 20 40 60 80 100 V VZ VZ Figure 8. Temperature Dependence of Zener Voltage vs. Zener Voltage V 9 8 7 Figure 11. Change of Zener voltage from turn-on up to the point of thermal equilibrium vs. Zener voltage mA 50 Tj = 25 °C 2.7 3.3 3.9 4.7 5.6 6.8 8.2 40 51 43 36 Δ VZ 6 5 4 3 2 1 0 -1 0 18126 lz 30 20 Test Current IZ 5 mA 10 IZ = 2 mA 0 0 18111 20 40 60 80 100 120 140 °C 1 2 3 4 5 6 7 8 9 10 V Tj VZ Figure 9. Change of Zener Voltage vs. Junction Temperature Figure 12. Breakdown Characteristics Document Number 85759 Rev. 1.5, 24-Mar-06 www.vishay.com 5 AZ23-V-Series Vishay Semiconductors mA 30 10 12 mA 10 Tj = 25 °C 39 51 47 Tj = 25 °C 8 lz 20 15 18 22 lz 6 Test Current IZ 5 mA 43 10 27 4 33 36 Test Current IZ 5 mA 2 0 0 18112 0 10 20 30 40 V 0 18113 10 20 30 40 50 60 70 80 90 100 V VZ VZ Figure 13. Breakdown Characteristics Figure 14. Breakdown Characteristics Layout for RthJA test Thickness: Fiberglass 0.059 in. (1.5 mm) Copper leads 0.012 in. (0.3 mm) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 www.vishay.com 6 Document Number 85759 Rev. 1.5, 24-Mar-06 AZ23-V-Series Vishay Semiconductors Package Dimensions in mm (Inches) 17418 Document Number 85759 Rev. 1.5, 24-Mar-06 www.vishay.com 7 AZ23-V-Series Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85759 Rev. 1.5, 24-Mar-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1