BA159GP

BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Glass Passivated Junction Fast Switching Rectifier DO-204AL (DO-41) Reverse Voltage 400 to 1000 V Forward Current 1.0 A Features 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. ted* aten P 0.205 (5.2) 0.160 (4.1) ® 1.0 (25.4) MIN. 0.034 (0.86) 0.028 (0.71) DIA. NOTE: Lead diameter is 0.026 (0.66) • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • High temperature metallurgically bonded construction • For use in high frequency rectifier circuits • Fast switching for high efficiency • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • 1.0 Ampere operation at TA=55°C with no thermal runaway • Typical IR less than 0.1µA • High temperature soldering guaranteed: 350°C/10 seconds, 0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension Mechanical Data for suffix "E" part numbers 0.023 (0.58) Dimensions in inches and (millimeters) *Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 ounce, 0.3 gram Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C Peak forward surge current 10ms single half sine-wave superimposed on rated load at TA=25°C Typical thermal resistance (NOTE 1) Operating junction and storage temperature range Symbols BA157GP BA158GP BA159DGP BA159GP VRRM VRMS VDC IF(AV) IFSM RΘJA TJ, TSTG 400 280 400 600 420 600 1.0 20 55 – 65 to +175 800 560 800 1000 700 1000 Units V V V A A °C/W °C Electrical Characteristics Parameter Ratings at 25°C ambient temperature unless otherwise specified. Symbols BA157GP BA158GP BA159DGP BA159GP VF IR trr CJ 150 250 15 1.3 5.0 500 500 Units V µA ns pF Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage TA=25°C Maximum reverse recovery time at IF=0.5A, IR=1.0A, Irr=0.25A Typical junction capacitance at 4.0V, 1MHz Notes: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted Document Number 88537 06-Mar-02 www.vishay.com 1 BA157GP thru BA159GP Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Forward Current Derating Curve Average Forward Rectified Current (A) 1.0 20 Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TA = 25°C 10ms Single Half Sine-Wave At Rated Load Resistive or Inductive Load 0.8 15 0.6 10 0.4 0.2 0.375" (9.5mm) Lead Length 0 25 50 75 100 125 150 175 5 0 1 10 100 Ambient Temperature (°C) Number of Cycles at 50 HZ Fig. 3 – Typical Instantaneous Forward Characteristics 10 20 Fig. 4 – Typical Reverse Characteristics Instantaneous Reverse Current (µA) 10 TJ = 125°C Instantaneous Forward Current (A) 1 1 TJ = 75°C 0.1 0.1 TJ = 25°C Pulse Width = 300µs 1% Duty Cycle TJ = 25°C 0.01 0 20 40 60 80 100 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 – Typical Junction Capacitance 100 Transient Thermal Impedance (°CW) TJ = 25°C f = 1.0MHZ Vsig = 50mVp-p 100 Fig. 6 – Typical Transient Thermal Impedance Junction Capacitance (pF) 10 10 1 1 1 10 Reverse Voltage (V) 100 0.1 0.01 0.1 1 10 100 t, Pulse Duration (sec.) Document Number 88537 06-Mar-02 www.vishay.com 2 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.