BA283

BA283

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BA283 - Band Switching Diodes - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BA283 数据手册
BA282/BA283 Vishay Semiconductors Band Switching Diodes Features • • • • • • Silicon planar diodes Low differential forward resistance e2 Low diode capacitance High reverse impedance Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367 Applications • Band switching in VHF-tuners Mechanical Data Case: DO35 glass case Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per ammopack (52 mm tape), 50 k/box Parts Table Part BA282 BA283 Type differentiation rf = max. 1.0 Ω at IF = 3 mA rf = max. 1.2 Ω at IF = 3 mA Ordering code BA282-TR or BA282-TAP BA283-TR or BA283-TAP Type marking BA282 BA283 Remarks Tape and reel/ammopack Tape and reel/ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward continuous current Test condition Symbol VR IF Value 35 100 Unit V mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Test condition l = 4 mm, TL = constant Symbol RthJA Tj Tstg Value 350 150 - 55 to +150 Unit K/W °C °C Document Number 85526 Rev. 1.7, 05-Dec-07 For technical support, please contact: Diodes-SSP@vishay.com www.vishay.com 1 BA282/BA283 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Test condition IF = 100 mA V R = 20 V f = 100 MHz, VR = 1 V f = 100 MHz, VR = 3 V f = 200 MHz, IF = 3 mA Differential forward resistance f = 200 MHz, IF = 10 mA f = 100 MHz, VR = 1 V BA282 BA283 BA282 BA283 BA282 BA283 Reverse impedance Part Symbol VF IR CD CD CD rf rf rf rf zr 100 Min. Typ. Max. 1000 50 1.7 1.5 1.2 1.0 1.2 0.7 0.9 Unit mV nA pF pF pF Ω Ω Ω Ω kΩ Typical Characteristics Tamb = 25 °C, unless otherwise specified 100 CD - Diode Capacitance (pF) f = 200 MHz Tj = 25 °C 10 3.0 2.5 2.0 1.5 BA282 1.0 BA283 0.5 0 1 10 100 94 9073 rf - Differential Forward Resistance (Ω) f = 200 MHz Tj = 25 °C BA283 1 BA282 0.1 0.1 0.1 1 10 100 94 9072 IF - Forward Current (mA) VR - Reverse Voltage (V) Figure 1. Differential Forward Resistance vs. Forward Current Figure 2. Diode Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO35 Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 www.vishay.com 2 For technical support, please contact: Diodes-SSP@vishay.com Document Number 85526 Rev. 1.7, 05-Dec-07 1.5 (0.059) 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) BA282/BA283 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85526 Rev. 1.7, 05-Dec-07 For technical support, please contact: Diodes-SSP@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BA283
### 物料型号 - BA282/BA283:Vishay Semiconductors生产的带开关二极管。

### 器件简介 - 硅平面二极管,具有低微分正向电阻、低二极管电容、高反向阻抗,并且是无铅组件,符合RoHS 2002/95/EC和WEEE 2002/96/EC标准。

### 引脚分配 - 器件采用DO35玻璃封装,阴极带颜色为黑色。

### 参数特性 - 绝对最大额定值: - 反向电压(VR):35V - 正向连续电流(IF):100mA

- 热特性: - 结到环境空气的热阻(RthJA):350K/W - 结温(T):150°C - 存储温度范围(Tstg):-55至+150°C

- 电气特性(Tamb=25°C): - 正向电压(VF):在100mA电流下测得,最大1000mV - 反向电流(IR):在20V反向电压下测得,最大50nA - 二极管电容(CD):在100MHz频率、1V反向电压下,BA282为1.5pF,BA283为1.2pF;在3V反向电压下,BA282为1.7pF - 微分正向电阻(rf):在200MHz频率、3mA电流下,BA282为1.0Ω,BA283为1.2Ω;在200MHz频率、10mA电流下,BA282为0.7Ω,BA283为0.9Ω - 反向阻抗(Zr):在100MHz频率、1V反向电压下,为100kΩ

### 功能详解应用信息 - 用于VHF调谐器中的波段切换。

### 封装信息 - 封装为DO35玻璃封装,重量约为125mg。 - 包装代码/选项:TR/10k每13英寸卷(52mm胶带),50k/箱;TAP/10k每弹药包(52mm胶带),50k/箱。
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