BA479G

BA479G, BA479S Vishay Semiconductors RF PIN Diodes - Single in DO-35 Features • Wide frequency range 10 MHz to 1 GHz • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications • Current controlled HF resistance in adjustable attenuators Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BA479G BA479S Type differentiation VR = 30 V, Zr > 5 kΩ VR = 30 V, Zr > 9 kΩ Ordering code BA479G-TR or BA479G-TAP BA479S-TR or BA479S-TAP Type Marking BA479G BA479S Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward continuous current Test condition Symbol VR IF Value 30 50 Unit V mA Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Test condition l = 4 mm, TL = constant Symbol RthJA Tj Tstg Value 350 125 - 55 to + 150 Unit K/W °C °C Document Number 85527 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BA479G, BA479S Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Differential forward resistance Reverse impedance Minority carrier lifetime Test condition IF = 20 mA V R = 30 V f = 100 MHz, VR = 0 f = 100 MHz, IF = 1.5 mA f = 100 MHz, VR = 0 IF = 10 mA, IR = 10 mA BA479G BA479S Part Symbol VF IR CD rf zr zr τ 5 9 4 Min. Typ. Max. 1000 50 0.5 50 Unit mV nA pF Ω kΩ kΩ µs Typical Characteristics Tamb = 25 °C, unless otherwise specified a - Typical Cross Modulation Distortion (dB) 100 20 Π - Circuit with 10 dB Attenuation V 0 = 40 dBmV f 1 = 100 MHz unmodulated - 20 IF - Forward Current (mA) 10 0 Tamb = 25 °C 1 - 40 - 60 - 80 0 20 40 60 80 f 2 , modulated with 200 kHz, m = 100 % (MHz) Scattering Limit 0.1 0.01 0 95 9735 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 95 9733 Figure 1. Forward Current vs. Forward Voltage Figure 3. Typ. Cross Modulation Distortion vs. Frequency f2 rf - Differential Forward Resistance (Ω) 10 000 1000 100 f > 20 MHz Tj = 25 °C 10 1 0.001 0.01 0.1 1 10 95 9734 IF - Forward Current (mA) Figure 2. Differential Forward Resistance vs. Forward Current www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85527 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 05-Aug-10 BA479G, BA479S Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85527 Rev. 1.7, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1.7 (0.067) www.vishay.com 3 1.5 (0.059) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1