BA682

BA682, BA683 Vishay Semiconductors Band Switching Diodes FEATURES • Silicon planar diodes • Low dynamic forward resistance • Low diode capacitance • High reverse impedance 94 9371 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in MECHANICAL DATA Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box APPLICATIONS • Band switching in VHF-tuners PARTS TABLE PART BA682 BA683 TYPE DIFFERENTIATION VR = 35 V, rf at IF 3 mA = max. 0.7 Ω VR = 35 V, rf at IF 3 mA = max. 1.2 Ω ORDERING CODE BA682-GS18 or BA682-GS08 BA683-GS18 or BA683-GS08 REMARKS Tape and reel Tape and reel ABSOLUTE MAXIMUM RATINGS (1) PARAMETER Reverse voltage Forward continuous current Note (1) T amb = 25 °C, unless otherwise specified TEST CONDITIONS SYMBOL VR IF VALUE 35 100 UNIT V mA THERMAL CHARACTERISTICS (1) PARAMETER Junction to ambient air Junction temperature Storage temperature range (1) TEST CONDITION On PC board 50 mm x 50 mm x 1.6 mm SYMBOL RthJA Tj Tstg VALUE 500 150 - 55 to + 150 UNIT K/W °C °C Note Tamb = 25 °C, unless otherwise specified ELECTRICAL CHARACTERISTICS (1) PARAMETER Forward voltage Reverse current Diode capacitance TEST CONDITION IF = 100 mA VR = 2 0 V f = 100 MHz, VR = 1 V f = 100 MHz, VR = 3 V f = 200 MHz, IF = 3 mA Dynamic forward resistance f = 200 MHz, IF = 10 mA Note Tamb = 25 °C, unless otherwise specified Document Number: 85530 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BA682 BA683 BA682 BA683 BA682 BA683 PART SYMBOL VF IR CD1 CD2 CD2 rf1 rf1 rf2 rf2 MIN. TYP. MAX. 1000 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 UNIT mV nA pF pF pF Ω Ω Ω Ω (1) BA682, BA683 Vishay Semiconductors Band Switching Diodes TYPICAL CHARACTERISTICS Tamb = 25 °C, unless otherwise specified rf - Differential Forward Resistance (Ω) 100 3.0 CD - Diode Capacitance (pF) f = 200 MHz Tj = 25 °C 10 2.5 2.0 1.5 f = 200 MHz Tj = 25 °C BA683 1 BA682 1.0 BA683 0.5 0 BA682 0.1 0.1 1 10 100 0.1 94 9075 1 10 100 94 9074 IF - Forward Current (mA) VR - Reverse Voltage (V) Fig. 1 - Dynamic Forward Resistance vs. Forward Current Fig. 2 - Diode Capacitance vs. Reverse Voltage PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 85530 Rev. 1.6, 16-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 2 (0.079) min. www.vishay.com 2 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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