BA983

BA982.BA983 Vishay Telefunken Silicon Planar Diodes Features D D D D Low differential forward resistance Low diode capacitance High reverse impedance Quadro Melf package Applications Band switching in VHF–tuners 96 12009 Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test Conditions Type Symbol VR IF Tj Tstg Value 35 100 150 –55...+150 Unit V mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 500 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Diode capacitance Test Conditions IF=100mA VR=20V f=100MHz, VR=1V f=100MHz, VR=3V f=200MHz, IF=3mA f=200MHz, IF=10mA Type Symbol VF IR CD CD CD rf rf rf rf Min Typ Max 1 50 1.5 1.25 1.2 0.7 1.2 0.5 0.9 Unit V nA pF pF pF Differential forward resistance BA982 BA983 BA982 BA983 BA982 BA983 W W W W Document Number 85534 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 1 (3) BA982.BA983 Vishay Telefunken rf – Differential Forward Resistance (W ) 100 CD – Diode Capacitance ( pF ) f = 200 MHz Tj = 25°C 10 3.0 2.5 2.0 1.5 BA 982 1.0 BA 983 0.5 0 0.1 94 9076 f = 100 MHz Tj = 25°C BA 983 1 BA 982 0.1 1 10 100 94 9077 0.1 1 10 100 IF – Forward Current ( mA ) VR – Reverse Voltage ( V ) Figure 1. Differential Forward Resistance vs. Forward Current Figure 2. Diode Capacitance vs. Reverse Voltage Dimensions in mm 96 12071 www.vishay.de • FaxBack +1-408-970-5600 2 (3) Document Number 85534 Rev. 2, 01-Apr-99 BA982.BA983 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85534 Rev. 2, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (3)