BAR63V-04W-GS18

VISHAY BAR63V-04W Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance (rf) can be adjusted to less than 1 Ω while the low reverse capacitance offers a high isolation. Typical applications for this PIN Diodes are wireless, mobile and TV-systems. 2 1 1 2 18379 3 3 Features • Low forward resistance • Very small reverse capacitance Applications For frequency up to 3 GHz RF-signal tuning Mobile , wireless and TV-Applications Mechanical Data Case: Plastic case (SOT-323) Weight: approx. 6.0 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAR63V-04W Ordering code BAR63V-04W-GS18 or BAR63V-04W-GS08 CW4 Marking Remarks Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 50 100 150 - 55 to + 150 Unit V mA °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Test condition IR = 10 µA V R = 35 V IF = 100 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 5 V Symbol VR IR VF CD CD 0.28 0.23 0.3 Min 50 10 1.2 Typ. Max Unit V nA V pF pF Document Number 85698 Rev. 1.2, 26-Apr-04 www.vishay.com 1 BAR63V-04W Vishay Semiconductors Parameter Forward resistance Test condition f = 100 MHz, IF = 1 mA f = 100 MHz, IF = 5 mA f = 100 MHz, IF = 10 mA Charge carrier life time IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol rf rf rf trr Min Typ. 2.0 1.1 0.9 115 2.0 Max VISHAY Unit Ω Ω Ω ns Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 Pulse Width = 100 ms IF = 10 mA Duty Cycle = 50 % Switching Time (ms) 100.00 I F - Forward Current ( mA ) 10.00 100 1.00 trise 10 t fall 0.10 1 0.1 18341 0.01 1 10 100 18325 0.5 0.6 0.7 0.8 0.9 1.0 R L – Load Resistance (kΩ) VF - Forward Voltage ( V ) Fig. 1 Forward Resistance vs. Forward Current Fig. 3 Forward Current vs. Forward Voltage 0.30 CD - Diode Capacitance ( pF ) 120 f = 1 MHz V R - Reverse V oltage ( V ) 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 20 24 28 100 80 60 40 20 0 0.01 0.1 1.0 10 100 1000 18333 VR - Reverse V oltage (V) 18329 IR - Reverse Current ( µA ) Fig. 2 Diode Capacitance vs. Reverse Voltage Fig. 4 Reverse Voltage vs. Reverse Current www.vishay.com 2 Document Number 85698 Rev. 1.2, 26-Apr-04 VISHAY BAR63V-04W Vishay Semiconductors 12 10 I F - Forward Current ( mA ) 8 6 4 2 0 -2 -4 -6 -8 -50 0 50 IF = 10 mA IR = 6 mA i rr = 3 mA 100 150 200 18337 Recovery Time ( ns ) Fig. 5 Typical Charge Recovery Curve Package Dimensions in mm 1.0 (0.039) 1.25 (0.049) 0.3 (0.012) 0.12 (0.005) 0.15 (0.006) min. 1.3 (0.051) 2.05 (0.080) 0...0.1 (0...0.004) 96 12236 Document Number 85698 Rev. 1.2, 26-Apr-04 2.0 (0.078) www.vishay.com 3 BAR63V-04W Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. VISHAY 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 www.vishay.com 4 Document Number 85698 Rev. 1.2, 26-Apr-04