BAR64V-05W-V
Vishay Semiconductors
RF PIN Diodes - Dual, Common Cathode in SOT-323
Description
Characterized by low reverse Capacitance the PIN Diodes BAR64V-05W-V was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance (RF) can be adjusted over a wide range. A long carrier life time offers low signal distortion for signals over 10 MHz up to 3 GHz. Typical applications for these PIN Diodes are switches and attenuators in wireless, mobile and TV-systems.
2 1
3
1
2
18380
3
Features
• High voltage current controlled RF resistor • Small diode capacitance • Low series inductance • Low forward resistance • Improved performance due to two separate dice • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Mechanical Data
Case: SOT-323 Weight: approx. 5.7 mg Packaging Codes/Options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box
Applications
• • • • For frequencies up to 3 GHz RF-signal tuning Signal attenuator and switches Mobile, wireless and TV-Applications
Parts Table
Part BAR64V-05W-V Ordering code BAR64V-05W-V-GS18 or BAR64V-05W-V-GS08 Marking DW5 Remarks Tape and reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Reverse voltage Forward current Junction temperature Storage temperature range Test condition Symbol VR IF Tj Tstg Value 100 100 150 - 55 to + 150 Unit V mA °C °C
Document Number 81836 Rev. 1.3, 29-Oct-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BAR64V-05W-V
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Reverse voltage Reverse current Forward voltage Diode capacitance Test condition IR = 10 µA V R = 50 V IF = 50 mA f = 1 MHz, VR = 0 f = 1 MHz, VR = 1 V f = 1 MHz, VR = 20 V f = 100 MHz, IF = 1 mA Forward resistance Charge carrier life time Series inductance f = 100 MHz, IF = 10 mA f = 100 MHz, IF = 100 mA IF = 10 mA, IR = 6 mA, iR = 3 mA Symbol VR IR VF CD CD CD rf rf rf trr LS 0.5 0.37 0.23 10 2.0 0.8 1.8 1 0.5 0.35 20 3.8 1.35 Min. 100 50 1.1 Typ. Max. Unit V nA V pF pF pF Ω Ω Ω µs nH
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
100.00 100.0
rf - Forward Ressistance (Ω)
I F - Forward Current (mA)
100
f = 100 MHz 10.0
10.00
1.00
1.0
0.10
0.1 0.1
18342
0.01 1 10 0.5
18326
0.6
0.7
0.8
0.9
1.0
IF - Forward Current (mA)
VF - Forward Voltage (V)
Figure 1. Forward Resistance vs. Forward Current
Figure 3. Forward Current vs. Forward Voltage
0.50 0.45
12
f = 1 MHz
10
CD - Diode Capacitance (pF)
I F = 10 mA I R = 6 mA i rr = 3 mA
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00
I F - Forward Current (mA)
0 4 8 12
16 20 24 28
18338
8 6 4 2 0 -2 -4 -6 -8 - 500 500
1500
2500
3500
18334
VR - Reverse Voltage (V)
trr - Reverse Recovery Time (ns)
Figure 2. Diode Capacitance vs. Reverse Voltage
Figure 4. Typical Charge Recovery Curve
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For technical questions within your region, please contact one of the following: Document Number 81836 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.3, 29-Oct-10
BAR64V-05W-V
Vishay Semiconductors
0 - 0.5 -1 - 1.5 IF = 0.5 mA -2 - 2.5 -3 0
21027
|S21|² - Insertion Loss (dB)
IF = 3mA IF = 1 mA
IF = 10 mA IF = 100 mA
0.5
1
1.5
2
2.5
3
3.5
f - Frequency (GHz)
Figure 5. Insertion Loss of One Diode Inserted in Series with 50 Ω Strip Line
0
|S21|² = |S12 |² - Isolation (dB)
-5
- 10
- 15
VR = 0, diode zero-biased
- 20
- 25 0
21028
0.5
1
1.5
2
2.5
3
3.5
f - Frequency ( GHz )
Figure 6. Isolation of One Diode Inserted in Series with 50 Ω Strip Line
IP2 - Second Order Intercept Point (dBm)
150
100
f = 1.8 GHz f = 0.9 GHz
50
0 0.1 1 10
21029
IF - Forward Current (mA)
Figure 7. Second Order Intercept Point for One Diode Inserted in 50 Ω Strip Line
Document Number 81836 Rev. 1.3, 29-Oct-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 3
BAR64V-05W-V
Vishay Semiconductors Package Dimensions in millimeters (inches): SOT-323
1.0 (0.039) 0.8 (0.031) 2.0 (0.079) 0.15 (0.006) 0.08 (0.003) 0.1 (0.004) 0.0 (0.000) 1.1 (0.043) 0.8 (0.031) 2.2 (0.087)
8°
0.46 (0.018) 0.26 (0.010) 0.525 (0.021) ref. 2.45 (0.096) 2.15 (0.085) 0.4 (0.016) 0.2 (0.008) 1.35 (0.053) 1.15 (0.045) foot print recommendation: 0.6 (0.024) 0.65 (0.026) typ 1.4 (0.055) 1.2 (0.047) 0.8 (0.031)
Document no.: 6.541-5040.02-4 Rev. 1 - Date: 06. April 2010
21113
0.65 (0.026) 1.3 (0.051)
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For technical questions within your region, please contact one of the following: Document Number 81836 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.3, 29-Oct-10
1.8 (0.071)
0°
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Vishay
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Document Number: 91000 Revision: 11-Mar-11
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