VISHAY
BAS170WS
Vishay Semiconductors
Schottky Diodes
Features
• • • • Schottky diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing
17431
Mechanical Data
Case: SOD-323 Plastic Package Weight: approx. 4 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Part BAS170WS Ordering code BAS170WS-GS18 or BAS170WS-GS08 73 Marking Remarks Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Surge forward current Power dissipation1)
1)
Test condition Tamb = 25 °C tp < 1 s, Tamb = 25 °C Tamb = 25 °C
Symbol VRRM IF IFSM Ptot
Value 70 70 600 200
Unit V mA mA mW
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air1) Junction temperature Operating temperature range Storage temperature range
1)
Test condition
Symbol RθJA Tj Tamb TS
Value 650 150 - 55 to + 125 - 55 to +150
Unit °C/W °C °C °C
Valid provided that electrodes are kept at ambient temperature
Document Number 85653 Rev. 1.2, 18-Nov-03
www.vishay.com 1
BAS170WS
Vishay Semiconductors Electrical Characteristics
Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage Forward voltage1) Capacitance Charge carrier lifetime Differential forward resistance
1)
VISHAY
Test condition IR = 10 µA (pulsed) VR =50 V V R = 70 V IF = 200 mA I
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