BAS21-V-GS18

BAS21-V-GS18

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BAS21-V-GS18 - Small Signal Switching Diodes, High Voltage - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS21-V-GS18 数据手册
BAS19-V / 20-V / 21-V Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diode • Fast switching diode in case SOT-23, e3 especially suited for automatic insertion. • These diodes are also available in other case styles including:the SOD-123 case with the type designations BAV19W-V to BAV21W-V, the Mini-MELF case with the type designation BAV101 to BAV103, the DO-35 case with the type designations BAV19-V to BAV21-V and the SOD323 case with type designation BAV19WS-V to BAV21WS-V. • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 1 2 16923 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAS19-V BAS20-V BAS21-V Type differentiation VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering code BAS19-V-GS18 or BAS19-V-GS08 BAS20-V-GS18 or BAS20-V-GS08 BAS21-V-GS18 or BAS21-V-GS08 A8 A81 A82 Marking Remarks Tape and Reel Tape and Reel Tape and Reel Document Number 85540 Rev. 1.5, 22-Jul-05 www.vishay.com 1 BAS19-V / 20-V / 21-V Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Continuous reverse voltage Test condition Part BAS19-V BAS20-V BAS21-V Repetitive peak reverse voltage BAS19-V BAS20-V BAS21-V Non-repetitive peak forward current Non-repetitive peak forward surge current Maximum average forward rectified current DC forward current Repetitive peak forward current Power dissipation 1) 2) Symbol VR VR VR VRRM VRRM VRRM IFSM IFSM IF(AV) IF IFRM Ptot Value 100 150 200 120 200 250 2.5 0.5 2001) 2002) 625 2502) Unit V V V V V V A A mA mA mA mW t = 1 µs t=1s (av. over any 20 ms period) Tamb = 25 °C Tamb = 25 °C Measured under pulse conditions; Pulse time = Tp ≤ 0.3 ms Device on fiberglass substrate, see layout on next page Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj TS Value 4301) 150 - 65 to + 150 Unit °C °C °C Device on fiberglass substrate, see layout on next page Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Leakage current Dynamic forward resistance Diode capacitance Reverse recovery time Test condition IF = 100 mA IF = 200 mA VR = VRmax VR = VRmax, Tj = 150 °C IF = 10 mA VR = 0, f = 1 MHz IF = IR = 30 mA, RL = 100 Ω, Irr = 3 mA Symbol VF VF IR IR rf Ctot trr 5 5 50 Min Typ. Max 1.0 1.25 100 100 Unit V V nA µA Ω pF ns www.vishay.com 2 Document Number 85540 Rev. 1.5, 22-Jul-05 BAS19-V / 20-V / 21-V Vishay Semiconductors Test Circuit and Waveforms Ω Ω Test cir cuit Input Signal total pulse duration duty factor rise time of reverse pulse reverse pulse duration tp(tot) = 2 µs δ = 0.0025 tr = 0.6ns tp = 100ns tr = 0.35ns C < 1pF Input signal Waveforms; IR = 3 mA Oscilloscope - rise time - cicuit capitance* *C = oscilloscope input capactitance + parasitic capacitance 18098 Output signal Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Document Number 85540 Rev. 1.5, 22-Jul-05 www.vishay.com 3 BAS19-V / 20-V / 21-V Vishay Semiconductors Package Dimensions in mm (Inches) 1.15 (.045) 2.6 (.102) 2.35 (.092) ISO Method E 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 3.1 (.122) 2.8 (.110) 0.4 (.016) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 1.43 (.056) 1.20(.047) 2.0 (0.079) 0.95 (.037) 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 4 Document Number 85540 Rev. 1.5, 22-Jul-05 0.95 (.037) BAS19-V / 20-V / 21-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 85540 Rev. 1.5, 22-Jul-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BAS21-V-GS18
1. 物料型号: - BAS19-V:反向击穿电压为120V - BAS20-V:反向击穿电压为200V - BAS21-V:反向击穿电压为250V

2. 器件简介: - 这些是小信号开关二极管,高电压型。 - BAV101到BAV103是DO-35封装的快速开关二极管,特别适用于自动插入安装。 - 也提供SOT-23封装(BAV19W-V到BAV21W-V)、Mini-MELF封装(BAV19-V到BAV21-V)和SOD323封装(BAV19WS-V到BAV21WS-V)。 - 无铅组件,符合RoHS 2002/95/EC和WEEE 2002/96/EC指令。

3. 引脚分配: - SOT-23封装的机械数据:重量约为8.8毫克,包装代码/选项包括GS18(每13英寸卷10K)、GS08(每7英寸卷3K)。

4. 参数特性: - 连续反向电压:BAS19-V为100V,BAS20-V为150V,BAS21-V为200V。 - 重复峰值反向电压:分别为120V、200V、250V。 - 非重复峰值正向电流(IFSM):2.5A(1秒脉冲)。 - 最大平均正向整流电流(任何20ms周期内平均值):200mA。 - DC正向电流(25°C环境温度):200mA。 - 重复峰值正向电流(FRM):625mA。 - 功率耗散(25°C环境温度):250mW。

5. 功能详解: - 这些二极管具有低正向电压降、低漏电流和快速开关特性。 - 适用于高速开关和脉冲功率应用。

6. 应用信息: - 这些二极管适用于需要高电压、快速开关和低正向电压降的应用,如电源、电机驱动和高频电路。

7. 封装信息: - 提供多种封装选项,包括SOT-23、Mini-MELF和SOD323,以适应不同的自动安装和空间要求。
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