0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
BAS70-05-V

BAS70-05-V

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BAS70-05-V - Small Signal Schottky Diodes, Single & Dual - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BAS70-05-V 数据手册
BAS70-00-V to BAS70-06-V Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching e3 • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC BAS70-00-V 3 BAS70-04-V 3 Top View 1 2 1 2 BAS70-05-V BAS70-06-V 3 Mechanical Data Case: SOT23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box 1 18439 3 Top View 2 1 2 Parts Table Part BAS70-00-V BAS70-04-V BAS70-05-V BAS70-06-V Ordering code BAS70-00-V-GS18 or BAS70-00-V-GS08 BAS70-04-V-GS18 or BAS70-04-V-GS08 BAS70-05-V-GS18 or BAS70-05-V-GS08 BAS70-06-V-GS18 or BAS70-06-V-GS08 73 74 75 76 Type Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Surge forward current Power dissipation 1) 1) Test condition Symbol VRRM = VRWM = VR IF Value 70 200 600 1) 1) Unit V mA mA mW tp < 1 s IFSM Ptot 2001) Device on fiberglass substrate, see layout on next page Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 5001) 125 - 65 to + 125 Unit K/W °C °C Device on fiberglass substrate, see layout on next page Document Number 85702 Rev. 1.7, 27-Sep-06 www.vishay.com 1 BAS70-00-V to BAS70-06-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Forward voltage Forward voltage 1) Test condition IR = 10 μA (pulsed) V R = 50 V IF = 1.0 mA IF = 15 mA, VR = 0 V, f = 1 MHz IF = IR = 10 mA, iR = 1 mA, RL = 100 Ω Symbol V(BR) IR VF VF CD trr Min 70 Typ. 20 Max 100 410 1000 Unit V nA mV mV pF ns Diode capacitance Reverse recovery time 1) 1.5 2 5 Pulse test; tp ≤ 300 μs Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 www.vishay.com 2 Document Number 85702 Rev. 1.7, 27-Sep-06 BAS70-00-V to BAS70-06-V Vishay Semiconductors Package Dimensions in mm (Inches): SOT23 17418 Document Number 85702 Rev. 1.7, 27-Sep-06 www.vishay.com 3 BAS70-00-V to BAS70-06-V Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85702 Rev. 1.7, 27-Sep-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BAS70-05-V
1. 物料型号: - BAS70-00-V、BAS70-04-V、BAS70-05-V、BAS70-06-V,这些型号分别对应不同的封装和引脚配置。

2. 器件简介: - 这些是小型信号肖特基二极管,具有极低的开启电压和快速开关特性。这些器件通过PN结保护环来防止过电压,例如静电放电。

3. 引脚分配: - 文档提供了BAS70-04-V和BAS70-00-V的顶视图,显示了引脚配置。

4. 参数特性: - 重复峰值反向电压:70V - 正向连续电流:200mA - 浪涌正向电流:600mA(tp<1s) - 功率耗散:200mW

5. 功能详解: - 器件在玻璃纤维基板上,具体布局见下一页。 - 热特性包括热阻抗、结温和存储温度范围。

6. 应用信息: - 这些肖特基二极管适用于需要快速开关和低功耗的应用场合。

7. 封装信息: - 封装类型为SOT23塑料封装,重量约为8.8毫克。 - 包装代码/选项包括GS18/每13英寸卷10k(8毫米胶带),每盒10k;GS08/每7英寸卷3k(8毫米胶带),每盒15k。
BAS70-05-V 价格&库存

很抱歉,暂时无法提供与“BAS70-05-V”相匹配的价格&库存,您可以联系我们找货

免费人工找货
BAS70-05-E3-08
  •  国内价格
  • 10+0.32803
  • 100+0.25983

库存:285

BAS70-05-HE3-08
  •  国内价格
  • 5+0.30314
  • 50+0.29716

库存:95

BAS70-05
  •  国内价格
  • 20+0.12041
  • 200+0.1134
  • 500+0.1064
  • 1000+0.0994
  • 3000+0.0959
  • 6000+0.091

库存:2062

BAS70W-05
  •  国内价格
  • 50+0.072
  • 500+0.0648
  • 5000+0.06
  • 10000+0.0576
  • 30000+0.0552
  • 50000+0.05376

库存:3000

BAS70W-05
  •  国内价格
  • 10+0.14
  • 50+0.125
  • 200+0.115
  • 1000+0.095

库存:2900

BAS70-05-7-F
  •  国内价格
  • 1+0.27528
  • 10+0.24705
  • 50+0.22447
  • 150+0.20941
  • 300+0.2

库存:1091

BAS70W-05-7-F
  •  国内价格
  • 10+0.37741
  • 100+0.29478
  • 600+0.29036
  • 1200+0.28165
  • 3000+0.26898

库存:1843

BAS70-05,215
  •  国内价格
  • 1+0.42897
  • 100+0.41397
  • 300+0.39897
  • 500+0.38397
  • 2000+0.37647
  • 5000+0.37197

库存:444

BAS70-04-E3-08
  •  国内价格
  • 10+0.32486
  • 100+0.25267
  • 600+0.21658
  • 1200+0.21333
  • 3000+0.1895

库存:3000