BAS85-M

BAS85-M Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage • The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9371 Applications • Applications where a very low forward voltage is required Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/2.5K per 7" reel (8 mm tape), 12.5K/box Parts Table Part BAS85-M Ordering code BAS85-M-18 or BAS85-M-08 Type Marking Remarks Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Continuous reverse voltage Forward continuous current Peak forward current Surge forward current Power dissipation 1) Test condition Symbol VR IF IFM Value 30 2001) 3001) 6001) 2001) Unit V mA mA mA mW tp < 1 s Tamb = 65 °C IFSM Ptot Valid provided that electrodes are kept at ambient temperature. Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj Tstg Value 4301) 125 - 55 to +150 Unit K/W °C °C Valid provided that electrodes are kept at ambient temperature. For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Document Number 83403 Rev. 1.0, 13-Jan-11 BAS85-M Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Test condition IR = 10 µA (pulsed) V R = 25 V Pulse test tp < 300 µs, IF = 0.1 mA Pulse test tp < 300 µs, IF = 1 mA Forward voltage Pulse test tp < 300 µs, IF = 10 mA Pulse test tp < 300 µs, IF = 30 mA Pulse test tp < 300 µs, IF = 100 mA Diode capacitance Reverse recovery time VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, Irr = 1 mA, Symbol V(BR) IR VF VF VF VF VF CD trr 500 800 10 5 Min. 30 0.2 2 240 320 400 Typ. Max. Unit V µA mV mV mV mV mV pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified PR - Reverse Power Dissipation (mW) 200 180 160 140 120 100 80 60 40 20 0 25 15822 1000 VR = 30 V IF - Forward Current (mA) Tj = 125 °C 100 Tj = 25 °C 10 RthJA = 540 kW PR - Limit at 100 % VR PR - Limit at 80 % VR 1 0.1 50 75 100 125 150 15824 0 0.5 1.0 1.5 Tj - Junction Temperature (°C) VF - Forward Voltage (V) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 1000 VR = VRRM 100 10 CD - Diode Capacitance (pF) 9 8 7 6 5 4 3 2 1 f = 1 MHz IR - Reverse Current (µA) 10 1 25 15823 0 50 75 100 125 150 15825 0.1 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 83403 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.0, 13-Jan-11 BAS85-M Vishay Semiconductors Package Dimensions in millimeters (inches): MiniMELF SOD-80 Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 83403 Rev. 1.0, 13-Jan-11 2 (0.079) min. For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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