BAS86_11

BAS86 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage. The devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level applications • This diode is also available in a DO-35 case with type designation BAT86. • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 94 9371 Mechanical Data Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/2.5K per 7" reel (8 mm tape), 12.5K/box Applications • Applications where a very low forward voltage is required Parts Table Part BAS86 Ordering code BAS86-GS18 or BAS86-GS08 Type marking Remarks Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Continuous reverse voltage Forward continuous current Repetitive peak forward current Power dissipation 1) 1) Test condition Symbol VR IF Value 50 200 1) Unit V mA mA mW tp < 1 s, ν ≤ 0.5 IFRM Ptot 500 1) 200 1) Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range 1) Test condition Symbol RthJA Tj Tamb Tstg Value 300 1) Unit K/W °C °C °C 125 - 65 to + 125 - 65 to +150 Valid provided that electrodes are kept at ambient temperature Document Number 85511 Rev. 1.8, 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAS86 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current Test condition IR = 10 µA (pulsed) V R = 40 V Pulse test tp < 300 µs, IF = 0.1 mA, δ < 2 % Pulse test tp < 300 µs, IF = 1 mA, δ < 2 % Forward voltage Pulse test tp < 300 µs, IF = 10 mA, δ < 2 % Pulse test tp < 300 µs, IF = 30 mA, δ < 2 % Pulse test tp < 300 µs, IF = 100 mA, δ < 2 % Diode capacitance Reverse recovery time VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, Irr = 1 mA, Symbol V(BR) IR VF VF VF VF VF CD trr 200 275 365 460 700 Min. 50 5 300 380 450 600 900 8 5 Typ. Max. Unit V µA mV mV mV mV mV pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified 500 450 400 350 300 250 200 150 100 50 0 25 0.1 R thJA = 540 K/W PR - Limit at 80 % VR PR - Limit at 100 % VR VR = 50 V P - Reverse Power Dissipation (mW) R 1000 Tj = 125 °C IF - Forward Current (A) 100 Tj = 25 °C 10 1 50 75 100 125 150 15829 0 0.5 1.0 1.5 15827 Tj - Junction Temperature (°C) V F - Forward Voltage (V) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 10000 C D - Diode Capacitance (pF) V R = V RRM 10 9 8 7 6 5 4 3 2 1 0 50 75 100 125 150 15830 f = 1 MHz I R - Reverse Current (µA) 1000 100 10 1 25 15828 0.1 1 10 100 Tj - Junction Temperature (°C) V R - Reverse Voltage (V) Figure 2. Reverse Current vs. Junction Temperature www.vishay.com 2 Figure 4. Diode Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85511 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.8, 13-Jan-11 BAS86 Vishay Semiconductors Package Dimensions in millimeters (inches): MiniMELF SOD-80 Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number 85511 Rev. 1.8, 13-Jan-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 2 (0.079) min. www.vishay.com 3 MiniMELF SOD80 Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches) Cathode indification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min. 1.6 (0.063) 1.4 (0.055) 5 (0.197) ref. Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 96 12070 Document Number: 84013 Rev. 1.3, 12-Jan-07 For technical questions, contact: EMI-filter@vishay.com 2 (0.079) min. www.vishay.com 21 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1