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BAT41_12

BAT41_12

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BAT41_12 - Small Signal Schottky Diode - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT41_12 数据手册
BAT41 Vishay Semiconductors Small Signal Schottky Diode Features • For general purpose applications • This diode features low turn-on voltage and high breakdown voltage. This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • This diode is also available in a MiniMELF case with type designation LL41 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BAT41 / Ordering code BAT41-TR or BAT41-TAP Type Marking BAT41 Remarks Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation 1) Test condition Symbol VRRM IF Value 100 1001) 3501) 7501) 200 1) Unit V mA mA mA mW tp < 1 s, δ < 0.5 tp = 10 ms Tamb = 65 °C IFRM IFSM Ptot Valid provided that electrodes are kept at ambient temperature Document Number 85659 Rev. 1.6, 12-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT41 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range 1) Test condition Symbol RthJA Tj Tamb Tstg Value 3001) 125 - 65 to + 125 - 65 to + 150 Unit K/W °C °C °C Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage2) Leakage current2) Forward voltage2) Diode capacitance 2) Test condition IR = 100 µA VR = 50 V, Tj = 25 °C VR = 50 V, Tj = 100 °C IF = 1 m A IF = 200 mA VR = 1 V, f = 1 MHz Symbol V(BR) IR IR VF VF CD Min. 100 Typ. 110 Max. 100 20 Unit V nA µA mV mV pF 400 2 450 1000 Pulse test, tp = 300 µs Typical Characteristics Tamb = 25 °C, unless otherwise specified 250 IR - Reverse Leakage Current (nA) 100000 Tj = 125 °C Ptot- Power Dissipation (mW) 200 150 100 10000 100 °C 75 °C 50 °C 1000 100 25 °C 50 10 1 0 0 20225 50 100 Tamb - Ambient Temperature (°C) 150 20226 0 10 20 30 40 50 60 70 80 90 100 VR - Reverse Voltage (V) Figure 1. Admissible Power Dissipation vs. Ambient Temperature Figure 2. Typical Reverse Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85659 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 12-Aug-10 BAT41 Vishay Semiconductors 1000 100 T j = 125 ° C 10 1 - 40 °C 0.1 0.01 0 18641 5.0 4.5 CD - Diode Capacitance (pF) I F - Forward Current (mA) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 5 10 15 20 25 30 35 40 25 ° C 200 400 600 800 1000 1200 20227 VF - Forward Voltage (mV) VR - Reverse Voltage (V) Figure 3. Typical Forward Characteristics Figure 4. Typical Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85659 Rev. 1.6, 12-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1.7 (0.067) www.vishay.com 3 1.5 (0.059) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000
BAT41_12
物料型号: - 型号:BAT41

器件简介: - BAT41是一款小信号肖特基二极管,适用于一般用途,具有低开启电压和高击穿电压。该器件通过一个PN结构防护环来保护,以防止过电压,例如静电放电。也提供MiniMELF封装的LL41型号。符合AEC-Q101标准,符合RoHS指令2002/95/EC,并符合WEEE 2002/96/EC。根据IEC 61249-2-21定义,无卤素。

引脚分配: - BAT41为DO-35封装,带有黑色阴极带。

参数特性: - 重复峰值反向电压(VRRM):100V - 正向连续电流(IF):100mA - 重复峰值正向电流(FRM):350mA(1秒内,占空比0.5) - 浪涌正向电流(IFSM):750mA(10ms) - 功率耗散(Ptot):200mW(环境温度65°C) - 热阻(RthJA):300K/W - 结温(Tj):125°C - 环境工作温度范围(Tamb):-65至+125°C - 存储温度范围(Tstg):-65至+150°C

功能详解: - 反向击穿电压(V(BR)):100V至110V - 漏电流(IR):在25°C和50V下,最大100nA;在100°C和50V下,最大20μA - 正向电压(VF):在1mA时为400mV至450mV,在200mA时为1000mV - 二极管电容(CD):在1V和1MHz下,最大2pF

应用信息: - 适用于一般用途的小信号肖特基二极管。

封装信息: - 封装类型:DO-35 - 重量:大约125mg - 包装代码/选项:TR/10k每13英寸卷(52mm胶带),50k/盒;TAP/10k每Ammopack(52mm胶带),50k/盒。
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