BAT42W-V_10

BAT42W-V, BAT43W-V Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the DO-35 case with the type designations BAT42 to BAT43 and in MiniMELF SOD-80 case with the type designations LL42 to LL43 • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging Codes/Options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAT42W-V BAT43W-V Ordering code BAT42W-V-GS18 or BAT42W-V-GS08 BAT43W-V-GS18 or BAT43W-V-GS08 Type Marking L2 L3 Remarks Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation 1) 1) Test condition Symbol VRRM IF Value 30 200 1) Unit V mA mA A mW tp < 1 s, δ < 0.5 tp < 10 ms Tamb = 65 °C IFRM IFSM Ptot 5001) 4 1) 2001) Valid provided that electrodes are kept at ambient temperature Document Number 85661 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT42W-V, BAT43W-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range 1) Test condition Symbol RthJA Tj Tamb Tstg Value 3001) 125 - 55 to + 125 - 55 to + 150 Unit K/W °C °C °C Valid provided that electrodes are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current1) Test condition IR = 100 µA (pulsed) V R = 25 V VR = 25 V, Tj = 100 °C IF = 200 mA IF = 10 mA Forward voltage 1) Part Symbol V(BR) IR IR VF Min 30 Typ. Max 0.5 100 1000 400 650 Unit V µA µA mV mV mV mV mV pF BAT42W-V BAT42W-V BAT43W-V BAT43W-V VF VF VF VF CD trr ηv 80 7 260 IF = 50 mA IF = 2 m A IF = 15 mA 330 450 Diode capacitance Reverse recovery time Rectification efficieny 1) VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω RL = 15 kΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V 5 ns % Pulse test tp < 300 µs, tp/T < 0.02 Typical Characteristics Tamb = 25 °C, unless otherwise specified 250 1000 I F - Forward Current (mA) 100 125 °C - 40 °C Ptot - Power Dissipation (mW) 200 150 100 50 0 0 50 100 150 200 10 1 25 °C 0.1 0.01 0 18442 Tamb - Ambient Temperature (°C) 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Figure 1. Admissible Power Dissipation vs. Ambient Temperature Figure 2. Typical Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85661 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 05-Aug-10 BAT42W-V, BAT43W-V Vishay Semiconductors 1000 IR - Reverse Leackage Current (µA) 125 °C 14 CD - Diode Capacitance (pF) 100 12 10 8 6 4 2 0 100 °C 75 °C 10 1 50 °C 25 °C 0.1 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 50 0 18445 5 10 15 20 25 30 18444 VR - Reverse Voltage (V) Figure 3. Typical Reverse Characteristics Figure 4. Typical Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): SOD-123 0.1 (0.004) max. 1.35 (0.053) 8° 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar 2.85 (0.112) 2.55 (0.100) 0.15 (0.006) 0.10 (0.004) 1 (0.039) 0.2 (0.008) 0° to Mounting Pad Layout 0.85 (0.033) 0.85 (0.033) 0.65 (0.026) 0.45 (0.018) 3.85 (0.152) 3.55 (0.140) 1.40 (0.055) 1.7 (0.067) 2.5 (0.098) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 85661 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 0.85 (0.033) Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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