BAT42WS-V

BAT42WS-V, BAT43WS-V Vishay Semiconductors Small Signal Schottky Diodes Features • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the DO-35 case with the type designations BAT42 to BAT43, in MiniMELF SOD-80 case with the type designations LL42 to LL43, and in SOD-123 plastic case with the type designations BAT42W-V to BAT43W-V • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part BAT42WS-V BAT43WS-V Ordering code BAT42WS-V-GS18 or BAT42WS-V-GS08 BAT43WS-V-GS18 or BAT43WS-V-GS08 Type marking L2 L3 Remarks Tape and reel Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation 1) Test condition Symbol VRRM IF Value 30 200 1) Unit V mA mA A mW tp < 1 s, δ < 0.5 tp < 10 ms IFRM IFSM Ptot 500 1) 4 1) 1) 150 Note: 1) Valid provided that electrodes are kept at ambient temperature Document Number 81813 Rev. 1.1, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT42WS-V, BAT43WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range Note: 1) Valid provided that electrodes are kept at ambient temperature Test condition Symbol RthJA Tj Tamb Tstg Value 650 1) Unit K/W °C °C °C 125 - 55 to + 125 - 55 to + 150 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current 1) Test condition IR = 100 µA (pulsed) V R = 25 V VR = 25 V, Tj = 100 °C IF = 200 mA IF = 10 mA Forward voltage 1) IF = 50 mA IF = 2 m A IF = 15 mA Diode capacitance Reverse recovery time Note: 1) Pulse test t < 300 µs, t /T < 0.02 p p VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω BAT42WS-V BAT42WS-V BAT43WS-V BAT43WS-V Part Symbol V(BR) IR IR VF VF VF VF VF CD trr 7 5 260 Min. 30 0.5 100 1000 400 650 330 450 Typ. Max. Unit V µA µA mV mV mV mV mV pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified Ptot - Admissible Power Dissipation (mW) 250 I F - Forward Current (mA) 1000 100 125 °C - 40 °C 200 150 100 50 0 0 50 100 150 Tamb - Ambient Temperature (°C) 10 1 25 °C 0.1 0.01 0 20981 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Figure 1. Admissible Power Dissipation vs. Ambient Temperature Figure 2. Typical Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 81813 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.1, 05-Aug-10 BAT42WS-V, BAT43WS-V Vishay Semiconductors 1000 IR - Reverse Leackage Current (µA) 125 °C 14 CD - Diode Capacitance (pF) 100 12 10 8 6 4 2 0 100 °C 75 °C 10 1 50 °C 25 °C 0.1 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 50 0 18445 5 10 15 20 25 30 18444 VR - Reverse Voltage (V) Figure 3. Typical Reverse Characteristics Figure 4. Typical Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): SOD-323 1.15 (0.045) 0.8 (0.031) 0.2 (0.008) 0.1 (0.004) max. 0.15 (0.006) 0.10 (0.004) 1.1 (0.043) 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) Cathode bar 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Foot print recommendation: 0.6 (0.024) 1.5 (0.059) 0° to 8 ° 0.6 (0.024) 1.6 (0.063) 17443 Document Number 81813 Rev. 1.1, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 0.6 (0.024) Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1