BAT42_10

BAT42, BAT43 Vishay Semiconductors Small Signal Schottky Diodes Features • For general purpose applications • These diodes feature very low turn-on voltage and fast guard ring against excessive voltage, such as electrostatic discharges • These diodes are also available in the SOD-123 case with the type designations BAT42W-V to BAT43W-V and in MiniMELF SOD-80 case with the type designations LL42 to LL43. • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammo tape (52 mm tape), 50 k/box Parts Table Part BAT42 BAT43 / Ordering code BAT42-TR or BAT42-TAP BAT43-TR or BAT43-TAP Type Marking BAT42 BAT43 Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current Power dissipation1) 1) Test condition Symbol VRRM IF Value 30 2001) 5001) 41) 2001) Unit V mA mA A mW tp < 1 s, δ < 0.5 tp < 10 ms Tamb = 65 °C IFRM IFSM Ptot Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Document Number 85660 Rev. 1.6, 05-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT42, BAT43 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Ambient operating temperature range Storage temperature range 1) Test condition Symbol RthJA Tj Tamb Tstg Value 3001) 125 - 65 to + 125 - 65 to +150 Unit K/W °C °C °C Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse breakdown voltage Leakage current1) Test condition IR = 100 µA (pulsed) V R = 25 V VR = 25 V, Tj = 100 °C IF = 200 mA IF = 10 mA Forward voltage1) IF = 50 mA IF = 2 m A IF = 15 mA Diode capacitance Reverse recovery time Rectification efficieny 1) Part Symbol V(BR) IR IR VF Min 30 Typ. Max 0.5 100 1000 400 650 Unit V µA µA mV mV mV mV mV pF BAT42 BAT42 BAT43 BAT43 VF VF VF VF CD trr ηv 80 7 260 330 450 VR = 1 V, f = 1 MHz IF = 10 mA, IR = 10 mA, iR = 1 mA, RL = 100 Ω RL = 15 kΩ, CL = 300 pF, f = 45 MHz, VRF = 2 V 5 ns % Pulse test tp < 300 µs, tp/T < 0.02 Typical Characteristics Tamb = 25 °C, unless otherwise specified 250 Ptot - Power Dissipation (mW) I F - Forward Current (mA) 1000 100 125 °C - 40 °C 200 150 100 50 0 0 50 100 150 200 10 1 25 °C 0.1 0.01 0 18442 Tamb - Ambient Temperature (°C) 18443 200 400 600 800 1000 1200 VF - Instantaneous Forward Voltage (mV) Figure 1. Admissible Power Dissipation vs. Ambient Temperature Figure 2. Typical Forward Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85660 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.6, 05-Aug-10 BAT42, BAT43 Vishay Semiconductors 1000 IR - Reverse Leackage Current (µA) 14 CD - Diode Capacitance (pF) 125 °C 100 12 10 8 6 4 2 0 100 °C 75 °C 10 1 50 °C 25 °C 0.1 0.01 0 10 20 30 40 VR - Reverse Voltage (V) 50 0 18445 5 10 15 20 25 30 18444 VR - Reverse Voltage (V) Figure 3. Typical Reverse Characteristics Figure 4. Typical Capacitance vs. Reverse Voltage Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85660 Rev. 1.6, 05-Aug-10 1.7 (0.067) For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 1.5 (0.059) DO35 Vishay Semiconductors DO35 Package Dimensions in mm (Inches) Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 84001 Rev. 1.3, 12-Feb-07 www.vishay.com 1 1.5 (0.059) 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) DO35 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 2 Document Number 84001 Rev. 1.3, 12-Feb-07 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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