BAT43W

BAT42W, BAT43W Vishay Semiconductors formerly General Semiconductor Schottky Diodes SOD-123 .022 (0.55) Cathode Band .152 (3.85) .140 (3.55) .112 (2.85) .100 (2.55) Top View Dimensions in inches and (millimeters) Mounting Pad Layout 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) .006 (0.15) max. .004 (0.1) max. .067 (1.70) .055 (1.40) .053 (1.35) max. .010 (0.25) min. Features • For general purpose applications • These diodes feature very low turn-on voltage and fast switching. These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. • These diodes are also available in the DO-35 case with the type designations BAT42 to BAT43 and in the MiniMELF case with the type designations LL42 to LL43. Mechanical Data Case: SOD-123 Plastic Package Weight: approx. 0.01g Marking Codes: BAT42W = L2 BAT43W = L3 Packaging Codes/Options: D3/10K per 13” reel (8mm tape), 30K/box D4/3K per 7” reel (8mm tape), 30K/box Maximum Ratings & Thermal Characteristics Parameters Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25°C Repetitve Peak Forward Current at tp < 1s, δ < 0.5, Tamb = 25°C Surge Forward Current at tp < 10 ms, Tamb = 25°C Power Dissipation (1) Ratings at 25°C ambient temperature unless otherwise specified. Symbol VRRM IF IFRM IFSM Ptot RΘJA Tj Tamb TS Value 30 200 500 4(1) 200 300 (1) (1) Unit V mA mA A mW °C/W °C °C °C at Tamb = 65°C Thermal Resistance Junction to Ambient Air Junction Temperature Ambient Operating Temperature Range Storage Temperature Range Note: (1) Valid provided that electrodes are kept at ambient temperature 125 – 55 to +125 – 55 to +150 Document Number 88138 5-Feb-02 www.vishay.com 1 BAT42W, BAT43W Vishay Semiconductors formerly General Semiconductor Electrical Characteristics Parameter Reverse Breakdown Voltage Leakage Current(1) (TJ = 25°C unless otherwise noted) Symbol V(BR)R IR BAT42W BAT42W BAT43W BAT43W Test Condition IR = 100µA (pulsed) VR = 25V VR = 25V, Tj = 100°C IF = 200mA IF = 10mA IF = 50mA IF = 2mA IF = 15mA VR = 1V, f = 1MHz IF = 10mA to IR = 10mA to IR = 1mA, RL = 100 Ω RL = 15KΩ, CL = 300pF, f = 45MHz, VRF = 2V Min 30 — — — — — 0.26 — — — 80 Typ — — — — — — — — 7 — — Max — 0.5 100 1.0 0.4 0.65 0.33 0.45 — 5 — Unit V µA Forward Voltage(1) VF V Capacitance Reverse Recovery Time Detection Efficiency Note: (1) Pulse Test tp < 300µs, δ < 2% Ctot trr ην pF ns % Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 1 – Admissible Power Dissipation vs. Ambient Temperature 250 1000 Fig. 2 – Typical Reverse Characteristics Ptot -- Power Dissipation (mW) IF -- Forward Current (mA) 200 100 125°C --40°C 150 10 100 1 25°C 50 0.1 0 0 25 50 75 100 125 150 175 200 0.01 0 200 400 600 800 1000 1200 TA -- Ambient Temperature (°C) VF -- Instantaneous Forward Voltage (mV) Fig. 3 – Typical Reverse Characteristics 1000 18 125°C 100 100°C 16 14 Fig. 4 – Typical Capacitance vs. Reverse Applied Voltage IR -- Reverse Leakage Current (µA) Capacitance (pF) 30 40 50 10 50°C 25°C 0.1 75°C 12 10 8 6 4 2 1 0.01 0 10 20 0 0 10 20 30 40 50 60 VR -- Reverse Voltage (V) www.vishay.com 2 VR -- Reverse Voltage (V) Document Number 88138 5-Feb-02