BAT54S

BAT54 / 54A / 54C / 54S Vishay Semiconductors Small Signal Schottky Diodes, Single & Dual Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. BAT54 3 BAT54A 3 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box 18034 Top View 1 2 1 2 BAT54C 3 BAT54S 3 Top View 1 2 1 2 Parts Table Part BAT54 BAT54A BAT54C BAT54S Ordering code BAT54-GS18 or BAT54-GS08 BAT54A-GS18 or BAT54A-GS08 BAT54C-GS18 or BAT54C-GS08 BAT54S-GS18 or BAT54S-GS08 L4 L42 L43 L44 Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Repetitive peak reverse voltage Forward continuous current Repetitive peak forward current Surge forward current current Power dissipation 1) Test condition Symbol VRRM IF IFRM Value 30 200 300 600 1) 1) 1) Unit V mA mA mA mW tp < 1 s IFSM Ptot 230 Device on fiberglass substrate, see layout on next page. Document Number 85508 Rev. 1.6, 24-Nov-04 www.vishay.com 1 BAT54 / 54A / 54C / 54S Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambiant air Junction temperature Storage temperature range 1) Test condition Symbol RthJA Tj = Tstg TS Value 4301) - 65 to + 150 - 65 to + 150 Unit °C/W °C °C Device on fiberglass substrate, see layout on next page. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Reverse Breakdown voltage Leakage current Forward voltage Test condition IR = 100 µA pulses Pulse test tp < 300 µs, δ < 2 % at V R = 25 V IF = 0.1 mA, tp < 300 µs, δ < 2 % IF = 1 mA, tp < 300 µs, δ < 2 % IF = 10 mA, tp < 300 µs, δ < 2 % IF = 30 mA, tp < 300 µs, δ < 2 % IF = 100 mA, tp < 300 µs, δ < 2 % Diode capacitance Reverse recovery time VR = 1 V, f = 1 MHz IF = 10 mA through IR = 10 mA to Irr = 1mA, RL = 100 Ω Symbol V(BR) IR VF VF VF VF VF Ctot trr Min 30 2 240 320 400 500 1000 10 5 Typ. Max Unit V µA mV mV mV mV mV pF ns Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 www.vishay.com 2 Document Number 85508 Rev. 1.6, 24-Nov-04 BAT54 / 54A / 54C / 54S Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 1000 100 IF in mA TJ = 125°C ˇ ˇ TJ = -40°C 10 1 0.1 0.01 0 0.2 0.4 ˇ T = 25°C J 18025 0.6 0.8 VF in V 1.0 1.2 1.4 Figure 1. Typical Forward Voltage Forward Current at Various Temperatures 14 12 10 Cin pF 8 6 4 2 0 0 4 8 16 12 VR in V 20 24 28 18026 Figure 2. Typical Capacitance °C vs. Reverse Applied Voltage VR 1000 100 I R in µA 10 1 0.1 0.01 0 18027 TJ = 125°ˇ C TJ = 100°ˇ C TJ = 75°ˇ C TJ = 50ˇ°C ˇ TJ = 25°C 5 10 15 VR in V 20 25 30 Figure 3. Typical Variation of Reverse Current at Various Temperatures Document Number 85508 Rev. 1.6, 24-Nov-04 www.vishay.com 3 BAT54 / 54A / 54C / 54S Vishay Semiconductors Package Dimensions in mm (Inches) 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) 3 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 1 0.95 (.037) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 4 Document Number 85508 Rev. 1.6, 24-Nov-04 BAT54 / 54A / 54C / 54S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85508 Rev. 1.6, 24-Nov-04 www.vishay.com 5