BAT81S_10

BAT81S, BAT82S, BAT83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition 94 9367 Applications • General purpose and switching Schottky barrier diode • HF-Detector • Protection circuit • Diode for low currents with a low supply voltage • Small battery charger • Power supplies • DC/DC converter for notebooks Mechanical Data Case: DO-35 Weight: approx. 125 mg Cathode band color: black Packaging codes/options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BAT81S BAT82S BAT83S Type differentiation V R = 40 V V R = 50 V V R = 60 V Ordering code BAT81S-TR or BAT81S-TAP BAT82S-TR or BAT82S-TAP BAT83S-TR or BAT83S-TAP Type Marking BAT81S BAT82S BAT83S Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Forward continuous current Peak forward surge current Repetitive peak forward current tp ≤ 10 ms tp ≤ 1 s Test condition Part BAT81S BAT82S BAT83S Symbol VR VR VR IF IFSM IFRM Value 40 50 60 30 500 150 Unit V V V mA mA mA Document Number 85512 Rev. 1.8, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAT81S, BAT82S, BAT83S Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Test condition l = 4 mm, TL = constant Symbol RthJA Tj Tstg Value 320 125 - 65 to + 150 Unit K/W °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Diode capacitance Test condition IF = 0.1 mA IF = 1 mA IF = 15 mA VR = VRmax VR = 1 V, f = 1 MHz Symbol VF VF VF IR CD Min. Typ. Max. 330 410 1000 200 1.6 Unit mV mV mV nA pF Typical Characteristics Tamb = 25 °C, unless otherwise specified PR - Reverse Power Dissipation (mW) 14 VR = 60 V 1000 I F - Forward Current (mA) 12 RthJA = 540 K/W 10 8 6 PR Limit at 100 V V PR - Limitat 100 %% R R 4 PR - Limit at 80 % VR 2 0 25 50 75 100 125 150 100 Tj = 125 °C 10 Tj = 25 °C 1 0.1 0.01 0 15796 0.5 1 1.5 2.0 15794 Tj - Junction Temperature (°C) V F - Forward Voltage (V) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1000 Figure 3. Forward Current vs. Forward Voltage 2.0 CD - Diode Capacitance (pF) V R = V RRM 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 f = 1 MHz I R - Reverse Current (µA) 100 10 1 0.1 25 15795 0 50 75 100 125 150 15797 0.1 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85512 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.8, 23-Jul-10 BAT81S, BAT82S, BAT83S Vishay Semiconductors Package Dimensions in millimeters (inches): DO-35 Cathode identification 0.55. (0.022) max 26 (1.024) min. 3.9 (0.154) max. 26 (1.024) min. Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85512 Rev. 1.8, 23-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1.7 (0.067) www.vishay.com 3 1.5 (0.059) DO35 Vishay Semiconductors DO35 Package Dimensions in mm (Inches) Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 84001 Rev. 1.3, 12-Feb-07 www.vishay.com 1 1.5 (0.059) 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) DO35 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. 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It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1