BAT82S-TR

BAT82S-TR

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BAT82S-TR - Small Signal Schottky Diodes - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BAT82S-TR 数据手册
BAT81S/82S/83S Vishay Semiconductors Small Signal Schottky Diodes Features • Integrated protection ring against static discharge e2 • Low capacitance • Low leakage current • Low forward voltage drop • Very low switching time • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 94 9367 Applications • General purpose and switching Schottky barrier diode • HF-Detector • Protection circuit • Diode for low currents with a low supply voltage • Small battery charger • Power supplies • DC/DC converter for notebooks Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BAT81S BAT82S BAT83S Type differentiation V R = 40 V V R = 50 V V R = 60 V Ordering code BAT81S-TR or BAT81S-TAP BAT82S-TR or BAT82S-TAP BAT83S-TR or BAT83S-TAP Type Marking BAT81S BAT82S BAT83S Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Reverse voltage Test condition Part BAT81S BAT82S BAT83S Forward continuous current Peak forward surge current Repetitive peak forward current tp ≤ 10 ms tp ≤ 1 s Symbol VR VR VR IF IFSM IFRM Value 40 50 60 30 500 150 Unit V V V mA mA mA Document Number 85512 Rev. 1.7, 26-Feb-07 www.vishay.com 1 BAT81S/82S/83S Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction temperature Storage temperature range Test condition Symbol RthJA Tj Tstg Value 320 125 - 65 to + 150 Unit K/W °C °C Thermal resistance junction to ambient air l = 4 mm, TL = constant Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 0.1 mA IF = 1 m A IF = 15 mA Reverse current Diode capacitance VR = VRmax VR = 1 V, f = 1 MHz Symbol VF VF VF IR CD Min Typ. Max 330 410 1000 200 1.6 Unit mV mV mV nA pF Typical Characteristics Tamb = 25 °C, unless otherwise specified PR - Reverse Power Dissipation (mW) 14 VR = 60 V 1000 I F - Forward Current (mA) 12 RthJA = 540 K/W 10 8 6 PR Limit at 100 V V PR - Limitat 100 %% R R 4 PR - Limit at 80 % VR 2 0 25 50 75 100 125 150 100 Tj = 125 °C 10 Tj = 25 °C 1 0.1 0.01 0 15796 0.5 1 1.5 2.0 15794 Tj - Junction Temperature (°C) V F - Forward Voltage (V) Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature Figure 3. Forward Current vs. Forward Voltage 1000 2.0 V R = V RRM CD - Diode Capacitance (pF) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 f = 1 MHz I R - Reverse Current (µA) 100 10 1 0.1 25 15795 0 50 75 100 125 150 15797 0.1 1 10 100 Tj - Junction Temperature (°C) VR - Reverse Voltage (V) Figure 2. Reverse Current vs. Junction Temperature Figure 4. Diode Capacitance vs. Reverse Voltage www.vishay.com 2 Document Number 85512 Rev. 1.7, 26-Feb-07 BAT81S/82S/83S Vishay Semiconductors Package Dimensions in millimeters (inches): DO35 Cathode Identification 0.55 max. (0.022) 1.7 (0.067) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85512 Rev. 1.7, 26-Feb-07 1.5 (0.059) www.vishay.com 3 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) BAT81S/82S/83S Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85512 Rev. 1.7, 26-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BAT82S-TR
1. 物料型号: - BAT81S:反向电压VR=40V,订购代码为BAT81S-TR或BAT81S-TAP。 - BAT82S:反向电压VR=50V,订购代码为BAT82S-TR或BAT82S-TAP。 - BAT83S:反向电压VR=60V,订购代码为BAT83S-TR或BAT83S-TAP。

2. 器件简介: - BAT81S/82S/83S是小型信号肖特基二极管,具有集成的防静电放电保护环、低电容、低漏电流、低正向电压降、非常低的开关时间等特点,并且是无铅组件,符合RoHS 2002/95/EC和WEEE 2002/96/EC标准。

3. 引脚分配: - 器件采用DO35玻璃封装,阴极带颜色为黑色。

4. 参数特性: - 反向电压:BAT81S为40V,BAT82S为50V,BAT83S为60V。 - 正向连续电流:IF为30mA。 - 峰值正向浪涌电流:IFSM为500mA(10ms)。 - 重复峰值正向电流:FRM为150mA(1s)。

5. 功能详解: - 这些肖特基二极管适用于一般用途和开关肖特基势垒二极管、HF检测器、低电流保护电路、小电池充电器、电源和笔记本电脑的DC/DC转换器等。

6. 应用信息: - 适用于一般用途和开关肖特基势垒二极管、HF检测器、低电流保护电路、小电池充电器、电源和笔记本电脑的DC/DC转换器等。

7. 封装信息: - 封装类型为DO35玻璃封装,重量约为125毫克。 - 包装代码/选项:TR/10 k per 13"卷(52 mm胶带),50 k/箱;TAP/10 k per Ammopack(52 mm胶带),50 k/箱。
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