BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon epitaxial planar diodes • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC
Applications
• General purposes
94 9371
Mechanical Data
Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part BAV100 BAV101 BAV102 BAV103 Type differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering code BAV100-GS18 or BAV100-GS08 BAV101-GS18 or BAV101-GS08 BAV102-GS18 or BAV102-GS08 BAV103-GS18 or BAV103-GS08 Type Marking Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Part BAV100 Repetitive peak reverse voltage BAV101 BAV102 BAV103 BAV100 Reverse voltage BAV101 BAV102 BAV103 Peak forward surge current Repetitive peak forward current Forward continuous current Power dissipation tp = 1 s Symbol VRRM VRRM VRRM VRRM VR VR VR VR IFSM IFRM IF Ptot Value 60 120 200 250 50 100 150 200 1 625 250 500 Unit V V V V V V V V A mA mA mW
Document Number 85542 Rev. 1.7, 01-Sep-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Junction lead Thermal resistance junction to ambient air Junction temperature Storage temperature range On PC board 50 mm x 50 mm x 1.6 mm Test condition Symbol RthJL RthJA Tj Tstg Value 350 500 175 - 65 to + 175 Unit K/W K/W °C °C
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Forward voltage Test condition IF = 100 mA V R = 50 V VR = 100 V VR = 150 V Reverse current VR = 200 V Tj = 100 °C, VR = 50 V Tj = 100 °C, VR = 100 V Tj = 100 °C, VR = 150 V Tj = 100 °C, VR = 200 V IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Breakdown voltage IR=100 µA, tp/T = 0.01, tp = 0.3 ms IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Diode capacitance Differential forward resistance Reverse recovery time VR = 0, f = 1 MHz IF = 10 mA IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 BAV100 BAV101 BAV102 BAV103 Part Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr 60 120 200 250 1.5 5 50 Min. Typ. Max. 1000 100 100 100 100 15 15 15 15 Unit mV nA nA nA nA µA µA µA µA V V V V pF Ω ns
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000 100 Scattering Limit 10 1000 Tj = 25 °C
I R - Reverse Current (µA)
I F - Forward Current (mA)
100
Scattering Limit 10
1 VR = VRRM
0.1 0.01 0 40 80 120
1
0.1 160 200
94 9085
0
0.4
0.8
1.2
1.6
2.0
94 9084
Tj - Junction Temperature (°C)
V F - Forward Voltage (V)
Figure 1. Reverse Current vs. Junction Temperature
Figure 2. Forward Current vs. Forward Voltage
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For technical questions within your region, please contact one of the following: Document Number 85542 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 01-Sep-10
BAV100, BAV101, BAV102, BAV103
Vishay Semiconductors
rf - Differential Forward Resistance (Ω)
1000
100
Tj = 25 °C 10
1 0.1
1
10
100
94 9089
I F - Forward Current (mA)
Figure 3. Differential Forward Resistance vs. Forward Current
Package Dimensions in millimeters (inches): MiniMELF SOD-80
Cathode indification
* 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side
Foot print recommendation: 2.5 (0.098) max. 1.25 (0.49) min.
1.6 (0.063) 1.4 (0.055)
5 (0.197) ref.
Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006
96 12070
Document Number 85542 Rev. 1.7, 01-Sep-10
2 (0.079) min.
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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Vishay
Disclaimer
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Revision: 12-Mar-12
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Document Number: 91000