BAV18

BAV18

  • 厂商:

    VISHAY

  • 封装:

  • 描述:

    BAV18 - Small Signal Switching Diodes, High Voltage - Vishay Siliconix

  • 详情介绍
  • 数据手册
  • 价格&库存
BAV18 数据手册
BAV17/18/19/20/21 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • Silicon Epitaxial Planar Diodes • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC e2 Applications • General purposes 94 9367 Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Part BAV17 BAV18 BAV19 BAV20 BAV21 Type differentiation VRRM = 25 V VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering code BAV17-TR or BAV17-TAP BAV18-TR or BAV18-TAP BAV19-TR or BAV19-TAP BAV20-TR or BAV20-TAP BAV21-TR or BAV21-TAP Type Marking BAV17 BAV18 BAV19 BAV20 BAV21 Remarks Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Tape and Reel/Ammopack Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Peak reverse voltage Test condition Part BAV17 BAV18 BAV19 BAV20 BAV21 Reverse voltage BAV17 BAV18 BAV19 BAV20 BAV21 Forward continuous current Peak forward surge current Forward peak current Power dissipation tp = 1 s, Tj = 25 °C f = 50 Hz Symbol VRRM VRRM VRRM VRRM VRRM VR VR VR VR VR IF IFSM IFRM Ptot Value 25 60 120 200 250 20 50 100 150 200 250 1 625 500 Unit V V V V V V V V V V mA A mA mW Document Number 85543 Rev. 1.7, 19-Feb-07 www.vishay.com 1 BAV17/18/19/20/21 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Junction to ambient air Junction temperature Storage temperature range Test condition l = 4 mm, TL = constant Symbol RthJA Tj Tstg Value 300 175 - 65 to + 175 Unit K/W °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Reverse current Test condition IF = 100 mA V R = 20 V V R = 50 V VR = 100 V VR = 150 V VR = 200 V Tj = 100 °C, VR = 20 V Tj = 100 °C, VR = 50 V Tj = 100 °C, VR = 100V Tj = 100 °C, VR = 150 V Tj = 100 °C, VR = 200 V Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms BAV17 BAV18 BAV19 BAV20 BAV21 BAV17 BAV18 BAV19 BAV20 BAV21 BAV17 BAV18 BAV19 BAV20 BAV21 Diode capacitance Differential forward resistance Reverse recovery time VR = 0, f = 1 MHz IF = 10 mA IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω Part Symbol VF IR IR IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) V(BR) CD rf trr 25 60 120 200 250 1.5 5 50 Min Typ. Max 1000 100 100 100 100 100 15 15 15 15 15 Unit mV nA nA nA nA nA µA µA µA µA µA V V V V V pF Ω ns www.vishay.com 2 Document Number 85543 Rev. 1.7, 19-Feb-07 BAV17/18/19/20/21 Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified I R - Reverse Current (µA) 100 Scattering Limit 10 rf - Differential Forward Resistance (Ω) 1000 1000 100 1 VR = VRRM Tj = 25 °C 10 0.1 0.01 0 40 80 120 160 200 1 0.1 1 10 100 94 9084 Tj - Junction Temperature (°C) 94 9089 I F - Forward Current (mA) Figure 1. Reverse Current vs. Junction Temperature Figure 3. Differential Forward Resistance vs. Forward Current 1000 Tj = 25 °C I F - Forward Current (mA) 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage Package Dimensions in millimeters (inches): DO35 Cathode Identification 0.55 max. (0.022) Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 94 9366 Document Number 85543 Rev. 1.7, 19-Feb-07 1.7 (0.067) 1.5 (0.059) www.vishay.com 3 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) BAV17/18/19/20/21 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 4 Document Number 85543 Rev. 1.7, 19-Feb-07 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1
BAV18
### 物料型号 - BAV17: VRRM=25V - BAV18: VRRM=60V - BAV19: VRRM=120V - BAV20: VRRM=200V - BAV21: VRRM=250V

### 器件简介 这些是Vishay Semiconductors生产的小型信号开关二极管,采用硅外延平面二极管技术,无铅组件,符合RoHS 2002/95/EC和WEEE 2002/96/EC标准。

### 引脚分配 这些二极管采用DO35玻璃封装,具有黑色阴极带。

### 参数特性 - 反向峰值电压(VRRM):不同型号的二极管有不同的反向峰值电压,从25V到250V不等。 - 反向工作电压(VR):不同型号的二极管有不同的反向工作电压,从20V到200V不等。 - 正向连续电流(IF):所有型号均为250mA。 - 正向峰值浪涌电流(FSM):1A,持续时间为1秒,环境温度为25°C。 - 正向峰值电流(FRM):625mA,频率为50Hz。 - 总功耗(Ptot):500mW。

### 功能详解 这些二极管主要用于一般用途,具有高电压开关能力,适用于需要小信号切换的应用。

### 应用信息 适用于一般用途,具体应用场景未在文档中详细说明。

### 封装信息 - 封装类型:DO35玻璃封装。 - 重量:大约125毫克。 - 包装代码/选项:TR/10 k每13英寸卷(52毫米胶带),50 k/箱;TAP/10 k每Ammopack(52毫米胶带),50 k/箱。
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