BAV19WS-V, BAV20WS-V, BAV21WS-V
Vishay Semiconductors
Small Signal Switching Diodes, High Voltage
Features
• Silicon Epitaxial Planar Diodes • For general purpose • These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 to BAS21 and the SOD-123 case with the type designation BAV19W-V to BAV21W-V • AEC-Q101 qualified • Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC
20145
Mechanical Data
Case: SOD-323 Weight: approx. 5 mg Packaging Codes/Options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box
Parts Table
Part BAV19WS-V BAV20WS-V BAV21WS-V Type differentiation VR = 100 V VR = 150 V VR = 200 V Ordering code BAV19WS-V-GS18 or BAV19WS-V-GS08 BAV20WS-V-GS18 or BAV20WS-V-GS08 BAV21WS-V-GS18 or BAV21WS-V-GS08 Type Marking A8 A9 AA Remarks Tape and reel Tape and reel Tape and reel
Document Number 85726 Rev. 1.5, 26-Nov-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
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BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter Continuous reverse voltage Test condition Part BAV19WS-V BAV20WS-V BAV21WS-V BAV19WS-V Repetitive peak reverse voltage Forward continuous current Rectified current (average) half wave rectification with resist. load Repetitive peak forward current Surge forward current Power dissipation Note
1)
Symbol VR VR VR VRRM VRRM VRRM IF IF(AV)
Value 100 150 200 120 200 250 250 1) 200 1) 625 1) 1 200
1)
Unit V V V V V V mA mA mA A mW
BAV20WS-V BAV21WS-V
f ≥ 50 Hz, θ = 180° t < 1 s, Tj = 25 °C
IFRM IFSM Ptot
Valid provided that leads are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Note
1)
Test condition
Symbol RthJA Tj Tstg
Value 650 1) 150 1) - 65 to + 150
1)
Unit K/W °C °C
Valid provided that leads are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Forward voltage Test condition IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, Tj = 100 °C Leakage current VR = 150 V VR = 150 V, Tj = 100 °C VR = 200 V VR = 200 V, Tj = 100 °C Dynamic forward resistance Diode capacitance Reverse recovery time IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100 Ω BAV19WS-V BAV19WS-V BAV20WS-V BAV20WS-V BAV21WS-V BAV21WS-V Part Symbol VF VF IR IR IR IR IR IR rf CD trr 5 1.5 50 Min. Typ. Max. 1 1.25 100 15 100 15 100 15 Unit V V nA µA nA µA nA µA Ω pF ns
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For technical questions within your region, please contact one of the following: Document Number 85726 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.5, 26-Nov-10
BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors Typical Characteristics
Tamb = 25 °C, unless otherwise specified
1000
I F - Forward Current (mA)
100
Tj = 100 °C
10
25 °C
rf - Dynamic Forward Resistance (Ω)
1
100
10
1
0.1
0.01 0
18858
0.2
0.4
0.6
0.8
1 1
18861
10
100
VF - Forward Voltage (V)
IF - Forward Current (mA)
Figure 1. Forward Current vs. Forward Voltage
Figure 4. Dynamic Forward Resistance vs. Forward Current
I O , I F - Admissible Forward Current (A)
0.3
1000 IR(Tj)/IR (25 °C) - Leakage Current
100
0.2 DC current IF Current (rectif.) I O 0.1
10 Reverse Voltage BAV19WS-V VR = 100 V BAV20WS-V VR = 150 V BAV21WS-V VR = 200 V 40 80 120 160 Tj - Junction Temperature (°C) 200
1
0 0 30 60 90 120 150
18862
0.1 0
18859
Tamb - Ambient Temperature (°C)
Figure 2. Admissible Forward Current vs. Ambient Temperature
Figure 5. Leakage Current vs. Junction Temperature
Ptot - Admissible Power Dissipation (W)
250 CD - Diode Capacitance (pF) 200 150 100 50
2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1
T j = 25 ° C
0 0
20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C)
18863
1
10
100
18864
VR - Reverse Voltage (V)
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Figure 6. Capacitance vs. Reverse Voltage
Document Number 85726 Rev. 1.5, 26-Nov-10
For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com 3
BAV19WS-V, BAV20WS-V, BAV21WSVishay Semiconductors Package Dimensions in millimeters (inches): SOD-323
1.15 (0.045)
0.8 (0.031)
0.2 (0.008)
0.40 (0.016) 0.25 (0.010)
1.95 (0.077) 1.60 (0.063) Cathode bar
0.40 (0.016)
0.20 (0.008)
2.85 (0.112) 2.50 (0.098)
Foot print recommendation:
0.6 (0.024)
1.5 (0.059)
1.1 (0.043)
0° to 8 °
0.1 (0.004) max.
0.15 (0.006)
0.10 (0.004)
0.6 (0.024)
1.6 (0.063)
17443
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For technical questions within your region, please contact one of the following: Document Number 85726 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.5, 26-Nov-10
0.6 (0.024)
Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009
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Revision: 12-Mar-12
1
Document Number: 91000