BAV20WS-V-G

BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features • • • • Silicon epitaxial planar diodes For general purpose AEC-Q101 qualified Compliant to RoHS Directive 2002/95/EC and in accordance to WEEE 2002/96/EC 20145 Mechanical Data Case: SOD-323 Weight: approx. 4 mg Packaging codes/options: 18/10K per 13" reel (8 mm tape), 10K/box 08/3K per 7" reel (8 mm tape), 15K/box Parts Table Part BAV19WS-V-G BAV20WS-V-G BAV21WS-V-G Type differentiation VR = 100 V VR = 150 V VR = 200 V Ordering code BAV19WS-V-G-18 or BAV19WS-V-G-08 BAV20WS-V-G-18 or BAV20WS-V-G-08 BAV21WS-V-G-18 or BAV21WS-V-G-08 Type Marking AS AT AU Remarks Tape and reel Tape and reel Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Continuous reverse voltage Test condition Part BAV19WS-V-G BAV20WS-V-G BAV21WS-V-G BAV19WS-V-G Repetitive peak reverse voltage Forward continuous current Rectified current (average) half wave rectification with resist. load Repetitive peak forward current Surge forward current Power dissipation Note 1) Symbol VR VR VR VRRM VRRM VRRM IF IF(AV) Value 100 150 200 120 200 250 250 1) Unit V V V V V V mA mA mA A BAV20WS-V-G BAV21WS-V-G 200 1) 625 1) 1 200 1) f  50 Hz,  = 180° t < 1 s, Tj = 25 °C IFRM IFSM Ptot mW Valid provided that leads are kept at ambient temperature ** Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 Document Number 83423 Rev. 1.0, 14-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Thermal resistance junction to ambient air Junction temperature Storage temperature range Note 1) Test condition Symbol RthJA Tj Tstg Value 650 1) 150 1) - 65 to + 150 1) Unit K/W °C °C Valid provided that leads are kept at ambient temperature Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 100 mA IF = 200 mA VR = 100 V VR = 100 V, Tj = 100 °C Leakage current VR = 150 V VR = 150 V, Tj = 100 °C VR = 200 V VR = 200 V, Tj = 100 °C Dynamic forward resistance Diode capacitance Reverse recovery time IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA, iR = 3 mA, RL = 100  BAV19WS-V-G BAV19WS-V-G BAV20WS-V-G BAV20WS-V-G BAV21WS-V-G BAV21WS-V-G Part Symbol VF VF IR IR IR IR IR IR rf CD trr 5 1.5 50 Min. Typ. Max. 1 1.25 100 15 100 15 100 15 Unit V V nA µA nA µA nA µA  pF ns Typical Characteristics Tamb = 25 °C, unless otherwise specified I F - Forward Current (mA) 100 Tj = 100 °C I O , I F - Admissible Forward Current (A) 1000 0.3 0.2 DC current IF Current (rectif.) I O 0.1 10 25 °C 1 0.1 0.01 0 18858 0 0 30 60 90 120 150 0.2 0.4 0.6 0.8 1 VF - Forward Voltage (V) 18859 Tamb - Ambient Temperature (°C) Figure 1. Forward Current vs. Forward Voltage Figure 2. Admissible Forward Current vs. Ambient Temperature www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 83423 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.0, 14-Mar-11 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Ptot - Admissible Power Dissipation (W) 250 CD - Diode Capacitance (pF) 200 150 100 50 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.1 T j = 25 ° C 0 0 20 40 60 80 100 120 140 160 180 200 Tamb - Ambient Temperature (°C) 18863 1 10 100 18864 VR - Reverse Voltage (V) Figure 3. Admissible Power Dissipation vs. Ambient Temperature Figure 6. Capacitance vs. Reverse Voltage rf - Dynamic Forward Resistance (Ω) 100 10 1 1 18861 10 100 IF - Forward Current (mA) Figure 4. Dynamic Forward Resistance vs. Forward Current 1000 IR(Tj)/IR (25 °C) - Leakage Current 100 10 Reverse Voltage 1 BAV19WS-V-G VR = 100 V BAV20WS-V-G VR = 150 V BAV21WS-V-G VR = 200 V 0.1 0 18862-2 40 80 120 160 200 Tj - Junction Temperature (°C) Figure 5. Leakage Current vs. Junction Temperature Document Number 83423 Rev. 1.0, 14-Mar-11 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 BAV19WS-V-G, BAV20WS-V-G, BAV21WS-V-G Vishay Semiconductors Package Dimensions in millimeters (inches): SOD-323 1.15 (0.045) 0.8 (0.031) 0.2 (0.008) 0.40 (0.016) 0.25 (0.010) 1.95 (0.077) 1.60 (0.063) Cathode bar 0.40 (0.016) 0.20 (0.008) 2.85 (0.112) 2.50 (0.098) Foot print recommendation: 0.6 (0.024) 1.5 (0.059) 1.1 (0.043) 0° to 8 ° 0.1 (0.004) max. 0.15 (0.006) 0.10 (0.004) 0.6 (0.024) 1.6 (0.063) 17443 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 83423 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.0, 14-Mar-11 0.6 (0.024) Document no.:S8-V-3910.02-001 (4) Created - Date: 24.August.2004 Rev. 5 - Date: 23.Sept.2009 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000