BAV21WS

厂商：
VISHAY
封装：
描述：
BAV21WS - Small-Signal Diodes - Vishay Siliconix

数据手册：

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详情介绍
数据手册
价格&库存

BAV21WS 数据手册

BAV19WS thru BAV21WS New Product Vishay Semiconductors formerly General Semiconductor Small-Signal Diodes SOD-323 .012 (0.3) Cathode Band .112 (2.85) .100 (2.55) .076 (1.95) .065 (1.65) Mounting Pad Layout 0.055 (1.40) 0.062 (1.60) 0.047 (1.20) Dimensions in inches Topand (millimeters) View .059 (1.5) .004 (0.1) max. .043 (1.1) .049 (1.25) max. .010 (0.25) min. .006 (0.15) max. Mechanical Data Case: SOD-323 Plastic Case Weight: approx. 0.004g Marking BAV19WS = A8 Code: BAV20WS = A9 BAV21WS = AA Packaging Codes/Options: D5/10K per 13” reel (8mm tape), 30K/box D6/3K per 7” reel (8mm tape), 30K/box Features • Silicon Epitaxial Planar Diodes • For general purpose • These diodes are also available in other case styles including: the DO-35 case with the type designation BAV19 - BAV21, the MiniMELF case with the type designation BAV100 - BAV103, the SOT-23 case with the type designation BAS19 - BAS21 and the SOD-123 case with the type designation BAV19W - BAV21W (TA = 25°C unless otherwise noted) Maximum Ratings and Thermal Characteristics Parameter Continuous Reverse Voltage BAV19WS BAV20WS BAV21WS BAV19WS BAV20WS BAV21WS Symbol VR Value 100 150 200 120 200 250 250(1) 200(1) 625(1) 1 200(1) 650(1) 150 (1) (1) Unit V Repetitive Peak Reverse Voltage VRRM IF IF(AV) IFRM IFSM Ptot RθJA Tj TS V mA mA mA A mW °C/W °C °C Forward DC Current at Tamb = 25°C Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25°C and f ≥ 50Hz Repetitive Peak Forward Current at f ≥ 50Hz, θ = 180°, Tamb = 25°C Surge Forward Current at t < 1s, Tj = 25°C Power Dissipation at Tamb = 25°C Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range Note: (1) Valid provided that leads are kept at ambient temperature. – 65 to +175 Document Number 88151 14-May-02 www.vishay.com 1 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Electrical Characteristics (T Parameter Forward Voltage BAV19WS BAV19WS BAV20WS BAV20WS BAV21WS BAV21WS J = 25°C unless otherwise noted) Symbol VF Test Condition IF = 100 mA IF = 200 mA VR = 100V VR = 100V, Tj = 100 °C VR = 150V VR = 150V, Tj = 100 °C VR = 200V VR = 200V, Tj = 100 °C IF = 10 mA VR = 0, f = 1 MHz IF = 30 mA, IR = 30 mA Irr = 3 mA, RL = 100 Ω Min — — — — — — — — — — — Typ — — — — — — — — 5 — — Max 1.00 1.25 100 15 100 15 100 15 — 1.5 50 Unit V nA µA nA µA nA µA Ω pF ns Leakage Current IR Dynamic Forward Resistance Capacitance Reverse Recovery Time rf Ctot trr Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) www.vishay.com 2 Document Number 88151 14-May-02 BAV19WS thru BAV21WS Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (T A = 25°C unless otherwise noted) Ω Document Number 88151 14-May-02 www.vishay.com 3

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BAV21WS

1. 物料型号： - BAV19WS：标记为A8 - BAV20WS：标记为A9 - BAV21WS：标记为AA

2. 器件简介： - 这些器件是Vishay半导体（原通用半导体）生产的小型信号二极管，采用SOD-323塑料封装。 - 这些二极管是硅外延平面二极管，适用于一般用途。

3. 引脚分配： - SOD-323封装具有两个引脚，分别为阳极和阴极。

4. 参数特性： - 连续反向电压：BAV19WS为100V，BAV20WS为150V，BAV21WS为200V。 - 重复峰值反向电压：BAV19WS为120V，BAV20WS为200V，BAV21WS为250V。 - 25°C时的正向直流电流：250mA。 - 半波整流平均电流：200mA。 - 重复峰值正向电流：625mA。 - 浪涌正向电流：1A。 - 功率耗散：200mW。 - 热阻（结到环境空气）：650°C/W。 - 结温：150°C。 - 存储温度范围：-65°C至+175°C。

5. 功能详解： - 这些二极管主要用于整流和信号处理应用，能够处理高达1A的浪涌电流。

6. 应用信息： - 适用于一般整流和信号处理应用，具体应用场景未在文档中详细说明。

7. 封装信息： - 除了SOD-323封装外，这些二极管还提供其他封装样式，包括DO-35、MiniMELF、SOT-23和SOD-123。 - 包装代码/选项：D5/13英寸卷（8mm带），每卷10K，每箱30K；D6/7英寸卷（8mm带），每卷3K，每箱30K。

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