BAV300_12

BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Small Signal Switching Diodes, High Voltage Features Silicon Epitaxial Planar Diodes Saving space Hermetic sealed parts Fits onto SOD-323 / SOT-23 footprints Electrical data identical with the devices BAV100...BAV103 / BAV200...BAV203 • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC • Halogen-free according to IEC 61249-2-21 definition • • • • • 9612315 Applications • General purposes Mechanical Data Case: MicroMELF Weight: approx. 12 mg Cathode band color: black Packaging codes/options: TR3 / 10 k per 13" reel (8 mm tape), 10 k/box TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box Parts Table Part BAV300 BAV301 BAV302 BAV303 Type differentiation VRRM = 60 V VRRM = 120 V VRRM = 200 V VRRM = 250 V Ordering code BAV300-TR3 or BAV300-TR BAV301-TR3 or BAV301-TR BAV302-TR3 or BAV302-TR BAV303-TR3 or BAV303-TR Remarks Tape and Reel Tape and Reel Tape and Reel Tape and Reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Part BAV300 Peak reverse voltage BAV301 BAV302 BAV303 BAV300 Reverse voltage BAV301 BAV302 BAV303 Forward continuous current Peak forward surge current Forward peak current tp = 1 s, Tj = 25 °C f = 50 Hz Symbol VRRM VRRM VRRM VRRM VR VR VR VR IF IFSM IFM Value 60 120 200 250 50 100 150 200 250 1 625 Unit V V V V V V V V mA A mA Document Number 85545 Rev. 2.0, 20-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Mounted on epoxy-glass hard tissue, fig. 4 35 µm copper clad, 0.9 mm2 copper area per electrode Symbol RthJA Tj Tstg Value Unit Junction to ambient air 500 K/W Junction temperature Storage temperature range 175 - 65 to + 175 °C °C Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Forward voltage Test condition IF = 100 mA V R = 50 V VR = 100 V VR = 150 V Reverse current VR = 200 V Tj = 100 °C, VR = 50 V Tj = 100 °C, VR = 100 V Tj = 100 °C, VR = 150V Tj = 100 °C, VR = 200V IR = 100 µA, tp/T = 0.01, tp = 0.3 ms Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms VR = 0, f = 1 MHz IF = 10 mA IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 BAV300 BAV301 BAV302 BAV303 Part Symbol VF IR IR IR IR IR IR IR IR V(BR) V(BR) V(BR) V(BR) CD rf trr 60 120 200 250 1.5 5 50 Min. Typ. Max. 1000 100 100 100 100 15 15 15 15 Unit mV nA nA nA nA µA µA µA µA V V V V pF Ω ns Diode capacitance Differential forward resistance Reverse recovery time www.vishay.com 2 For technical questions within your region, please contact one of the following: Document Number 85545 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2.0, 20-Aug-10 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 100 Scattering Limit 10 25 0.355 0.152 9.9 24 0.71 1.3 1.27 I R - Reverse Current (µA) 1 VR = VRRM 10 0.1 0.01 0 40 80 120 2.5 160 200 95 10329 94 9084 Tj - Junction Temperature (°C) Figure 1. Reverse Current vs. Junction Temperature Figure 4. Board for RthJA Definition (in mm) 1000 Tj = 25 °C I F - Forward Current (mA) 100 Scattering Limit 10 1 0.1 0 94 9085 0.4 0.8 1.2 1.6 2.0 V F - Forward Voltage (V) Figure 2. Forward Current vs. Forward Voltage rf - Differential Forward Resistance (Ω) 1000 100 Tj = 25 °C 10 1 0.1 1 10 100 94 9089 I F - Forward Current (mA) Figure 3. Differential Forward Resistance vs. Forward Current Document Number 85545 Rev. 2.0, 20-Aug-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 BAV300, BAV301, BAV302, BAV303 Vishay Semiconductors Package Dimensions in millimeters (inches): MicroMELF Cathode indification 1 (0.039) surface plan 1.2 (0.047) 1.1 (0.043) * 2 (0.079) 1.8 (0.071) 0.25 (0.010) 0.15 (0.006) > R2.5 (0.098) glass * The gap between plug and glass can be either on cathode or anode side Foot print recommendation: Reflow soldering 2.4 (0.094) 0.8 (0.031) 0.8 (0.031) 0.9 (0.035) Wave soldering 2.8 (0.110) 0.9 (0.035) 1.2 (0.047) 0.8 (0.031) 1 (0.039) Created - Date: 26.July.1996 Rev. 13 - Date: 07.June.2006 Document no.:6.560-5007.01-4 96 12072 www.vishay.com 4 For technical questions within your region, please contact one of the following: Document Number 85545 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 2.0, 20-Aug-10 1.4 (0.055) 0.6 (0.024) surface plan 1. < gl 35 ( as 0.0 s 53 ) Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000