BC856

VISHAY BC856 to BC859 Vishay Semiconductors Small Signal Transistors (PNP) Features • PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. • Especially suited for automatic insertion in thick and thin-film circuits. • These transistors are subdivided into three groups A, B, and C) according to their current gain. The type BC856 is available in groups A and B, however, the types BC857, BC558 and BC859 can be supplied in all three groups. The BC849 is a low noise type. • As complementary types, the NPN transistors BC846...BC849 are recomended. 2 1 1 B 3 18978 C3 E2 Mechanical Data Case: SOT-23 Plastic case Weight: approx. 8.8 mg Marking: BC856A = 3A BC858A = 3J BC856B = 3B BC858B = 3K BC858C = 3L BC857A = 3E BC857B = 3F BC857C = 3G BC859A = 4A BC859B = 4B BC859C = 4C Packaging Codes/Options: GS18 / 10 k per 13" reel (8 mm tape), 10 k/box GS08 / 3 k per 7" reel (8 mm tape), 15 k/box Pinning: 1 = Base, 2 = Emitter, 3 = Collector Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 1 BC856 to BC859 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector - base voltage Test condition Part BC856 BC857 BC858 BC859 Collector - emitter voltage (base shorted) BC856 BC857 BC858 BC859 Collector - emitter voltage (base open) BC856 BC857 BC858 BC859 Emitter - base voltage Collector current Peak colector current Peak base current Peak emitter current Power dissipation 1) VISHAY Symbol - VCBO - VCBO - VCBO - VCBO - VCES - VCES - VCES - VCES - VCEO - VCEO - VCEO - VCEO - VEBO - IC - ICM - IBM IEM Value 80 50 30 30 80 50 30 30 65 45 30 30 5 100 200 200 200 310 1) Unit V V V V V V V V V V V V V mA mA mA mA mW Tamb = 25 °C Ptot Device on fiberglass substrate, see layout on third page. Maximum Thermal Resistance Parameter Thermal resistance junction to ambient air Thermal resistance junction to substrate backside Junction temperature Storage temperature range 1) Test condition Symbol RθJA RθSB Tj TS Value 3201) 4501) 150 - 65 to + 150 Unit °C/W °C/W °C °C Device on fiberglass substrate, see layout on third page. Electrical DC Characteristics Parameter Small signal current gain (current gain group A) Small signal current gain (current gain group B) Small signal current gain (current gain group C) Input impedance (current gain group A) Input impedance (current gain group B) Input impedance (current gain group C) Test condition - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz Part Symbol hfe hfe hfe hie hie hie hoe 1.6 3.2 6 Min Typ 220 330 600 2.7 4.5 8.7 18 4.5 8.5 15 30 kΩ kΩ kΩ µS Max Unit Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group A) www.vishay.com 2 Document Number 85135 Rev. 1.2, 08-Sep-04 VISHAY Parameter Test condition Part Symbol hoe hoe hre hre hre hFE hFE hFE hFE hFE hFE VCEsat VCEsat VBEsat VBEsat VBE VBE BC856 BC857 BC858 BC859 - VCE = 80 V, Tj = 125 °C - VCE = 50 V, Tj = 125 °C - VCE = 30 V, Tj = 125 °C Collector-base cut-off current - VCB = 30 V - VCB = 30 V, Tj = 150 °C BC857 BC857 BC858 BC859 ICES ICES ICES ICES ICES ICES ICES ICES ICBO ICBO BC856 to BC859 Vishay Semiconductors Min Typ 30 60 1.5 x 10-4 2 x 10-4 3 x 10-4 90 150 270 110 200 420 180 290 520 90 250 700 900 600 660 0.2 0.2 0.2 0.2 750 820 15 15 15 15 4 4 4 4 15 5 220 450 800 300 650 mV mV mV mV mV mV nA nA nA nA µA µA µA µA µA µA Max 60 110 Unit µS µS Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group B) Output admittance (current gain - VCE = 5 V, - IC = 2 mA, f = 1 kHz group C) Reverse voltage transfer ratio (current gain group A) Reverse voltage transfer ratio (current gain group B) Reverse voltage transfer ratio (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) DC current gain (current gain group A) DC current gain (current gain group B) DC current gain (current gain group C) Collector saturation voltage Base saturation voltage Base - emiter voltage Collector-emitter cut-off current - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 2 mA, f = 1 kHz - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 10 µA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 2 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - IC = 10 mA, - IB = 0.5 mA - IC = 100 mA, - IB = 5 mA - VCE = 5 V, - IC = 2 mA - VCE = 5 V, - IC = 10 mA - VCE = 80 V - VCE = 50 V - VCE = 30 V Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 3 BC856 to BC859 Vishay Semiconductors Electrical AC Characteristics Parameter Gain bandwidth product Collector - base capacitance Noise figure Test condition - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, f = 1 MHz - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ, f = 1 kHz, ∆f = 200 Hz BC856 Part Symbol fT CCBO F 2 Min Typ 150 6 10 Max VISHAY Unit MHz pF dB BC857 BC858 BC859 - VCE = 5 V, - IC = 200 µA, RG = 2 kΩ, f = (30 to 15000) Hz BC859 F F F F 2 2 1 1.2 10 10 4 4 dB dB dB dB www.vishay.com 4 Document Number 85135 Rev. 1.2, 08-Sep-04 VISHAY Layout for RthJA test Thickness: Fiberglass 1.5 mm (0.059 in.) Copper leads 0.3 mm (0.012 in.) BC856 to BC859 Vishay Semiconductors 7.5 (0.3) 3 (0.12) 1 (0.4) 12 (0.47) 15 (0.59) 0.8 (0.03) 2 (0.8) 1 (0.4) 2 (0.8) 5 (0.2) 1.5 (0.06) 5.1 (0.2) 17451 Typical Characteristics (Tamb = 25 °C unless otherwise specified) mW 500 400 P tot 300 200 100 ν =0 0 19195 -3 10 0.5 0.2 10 rthSB R thSB -1 0.1 0.05 0.02 0.01 0.005 tp ν= T tp T 10 -2 PI 0 100 TSB 200 °C 19191 10 -7 10 10-6 10-5 10-4 10 -3 tp 10-2 10-1 1s Figure 1. Admissible Power Dissipation vs. Temperature of Substrate Backside Figure 2. Pulse Thermal Resistance vs. Pulse Duration (normalized) Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 5 BC856 to BC859 Vishay Semiconductors VISHAY 10 3 -VCE = 5 V 100 °C V 0.5 0.4 0.3 -VCEsat 0.2 -IC /-IB = 20 hFE 10 2 Tamb = 25 °C - 50 °C 10 Tamb = 100 °C 0.1 25 °C -50 °C 1 19183 10-2 10-1 1 -IC 10 102 0 19187 10 -1 1 -IC 10 102mA Figure 3. DC Current Gain vs. Collector Current Figure 6. Collector Saturation Voltage vs. Collector Current 10 -ICBO nA4 3 pF 20 Tamb = 25 °C 10 10 2 C CBO CEBO 10 test voltage - VCBO : equal to the given maximum value - VCEO typical maximum 0 100 Tj 200 °C 19186 CEBO C CBO 10 1 10 19184 -1 0 0.1 1 -V CBO, -VEBO 10 V Figure 4. Collector-Base Cutoff Curent vs. Ambient Temperature Figure 7. Collector Base Capacitance, Emitter base Capacitance vs. Bias Voltage 10 mA 2 -VCE = 5 V Tamb = 25 °C 10 2 -VCE = 5 V Tamb= 25 °C he(-I C) h e(-I C= 2 mA) -I C 10 10 h ie 1 h fe h oe 1 10 mA h re 1 -1 10 0 19197 0.5 -V BE 1V 19188 10 -1 10 -1 -I C Figure 5. Collector Current vs. Base-Emitter Voltage Figure 8. Relative h-Parameters vs. Collector Current www.vishay.com 6 Document Number 85135 Rev. 1.2, 08-Sep-04 VISHAY BC856 to BC859 Vishay Semiconductors MHz 3 10 Tamb = 25 °C -VCE = 10 V dB 20 -I = 0.2 mA C 18 f = 1 kHz 16 RG = 2 kΩ Tamb = 25 °C 14 12 fr 10 2 5V 2V F 10 8 6 4 2 10 19198 0.1 1 -I C 10 100 mA 19201 0 0.1 1 10 -VCE 100 mA Figure 9. Gain-Bandwidth Product vs. Collector Current Figure 12. Noise Figure vs. Collector Emitter Voltage dB 20 18 16 14 F 12 10 8 6 4 2 -VCE = 5 V f = 120 Hz R G = 1 MΩ 500 Ω 100 kΩ 10 kΩ 1kΩ 0 -3 10 19199 10-2 10-1 -I C Tamb = 25 °C 10 mA 1 Figure 10. Noise Figure vs. Collector Current dB 20 18 16 14 F 12 10 8 6 4 2 0 -3 10 19200 -VCE = 5 V f = 120 Hz Tamb = 25 °C R G = 1 MΩ 100 kΩ 10 kΩ 1kΩ 500 Ω 10-2 10-1 1 10 mA -I C Figure 11. Noise Figure vs. Collector Current Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 7 BC856 to BC859 Vishay Semiconductors Package Dimensions in mm (Inches) VISHAY 1.15 (.045) 0.175 (.007) 0.098 (.005) 0.1 (.004) max. 0.4 (.016) 0.4 (.016) 2.6 (.102) 2.35 (.092) 0.95 (.037) ISO Method E 3.1 (.122) 2.8 (.110) 0.4 (.016) 3 1.43 (.056) 1.20(.047) Mounting Pad Layout 0.52 (0.020) 0.9 (0.035) 2.0 (0.079) 1 0.95 (.037) 2 0.95 (.037) 0.95 (0.037) 0.95 (0.037) 17418 www.vishay.com 8 Document Number 85135 Rev. 1.2, 08-Sep-04 VISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to BC856 to BC859 Vishay Semiconductors 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 85135 Rev. 1.2, 08-Sep-04 www.vishay.com 9